AT312054B - Verfahren zum Herstellen eines Silizium-Planartransistors - Google Patents
Verfahren zum Herstellen eines Silizium-PlanartransistorsInfo
- Publication number
- AT312054B AT312054B AT203071A AT203071A AT312054B AT 312054 B AT312054 B AT 312054B AT 203071 A AT203071 A AT 203071A AT 203071 A AT203071 A AT 203071A AT 312054 B AT312054 B AT 312054B
- Authority
- AT
- Austria
- Prior art keywords
- manufacturing
- planar transistor
- silicon planar
- silicon
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702013220 DE2013220A1 (de) | 1970-03-19 | 1970-03-19 | Verfahren zum Herstellen einer Transistor anordnung aus Silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT312054B true AT312054B (de) | 1973-12-10 |
Family
ID=5765627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT203071A AT312054B (de) | 1970-03-19 | 1971-03-09 | Verfahren zum Herstellen eines Silizium-Planartransistors |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3754321A (de) |
| AT (1) | AT312054B (de) |
| CH (1) | CH522954A (de) |
| DE (1) | DE2013220A1 (de) |
| FR (1) | FR2083421B1 (de) |
| GB (1) | GB1310806A (de) |
| NL (1) | NL7103588A (de) |
| SE (1) | SE378154B (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4999318A (en) * | 1986-11-12 | 1991-03-12 | Hitachi, Ltd. | Method for forming metal layer interconnects using stepped via walls |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3523038A (en) * | 1965-06-02 | 1970-08-04 | Texas Instruments Inc | Process for making ohmic contact to planar germanium semiconductor devices |
| US3571913A (en) * | 1968-08-20 | 1971-03-23 | Hewlett Packard Co | Method of making ohmic contact to a shallow diffused transistor |
| ES374318A1 (es) * | 1968-12-10 | 1972-03-16 | Matsushita Electronics Corp | Un metodo de fabricar un dispositivo semiconductor sensiblea la presion. |
-
1970
- 1970-03-19 DE DE19702013220 patent/DE2013220A1/de active Pending
-
1971
- 1971-03-02 CH CH304271A patent/CH522954A/de not_active IP Right Cessation
- 1971-03-09 AT AT203071A patent/AT312054B/de not_active IP Right Cessation
- 1971-03-17 NL NL7103588A patent/NL7103588A/xx unknown
- 1971-03-18 US US00125701A patent/US3754321A/en not_active Expired - Lifetime
- 1971-03-19 SE SE7103606A patent/SE378154B/xx unknown
- 1971-03-19 FR FR7109677A patent/FR2083421B1/fr not_active Expired
- 1971-04-19 GB GB2481871*A patent/GB1310806A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2013220A1 (de) | 1971-11-25 |
| US3754321A (en) | 1973-08-28 |
| SE378154B (de) | 1975-08-18 |
| GB1310806A (en) | 1973-03-21 |
| NL7103588A (de) | 1971-09-21 |
| FR2083421B1 (de) | 1977-01-21 |
| CH522954A (de) | 1972-05-15 |
| FR2083421A1 (de) | 1971-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |