SE378154B - - Google Patents

Info

Publication number
SE378154B
SE378154B SE7103606A SE360671A SE378154B SE 378154 B SE378154 B SE 378154B SE 7103606 A SE7103606 A SE 7103606A SE 360671 A SE360671 A SE 360671A SE 378154 B SE378154 B SE 378154B
Authority
SE
Sweden
Application number
SE7103606A
Inventor
H Murrmann
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE378154B publication Critical patent/SE378154B/xx

Links

Classifications

    • H10P95/00
    • H10W20/40
SE7103606A 1970-03-19 1971-03-19 SE378154B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702013220 DE2013220A1 (de) 1970-03-19 1970-03-19 Verfahren zum Herstellen einer Transistor anordnung aus Silicium

Publications (1)

Publication Number Publication Date
SE378154B true SE378154B (de) 1975-08-18

Family

ID=5765627

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7103606A SE378154B (de) 1970-03-19 1971-03-19

Country Status (8)

Country Link
US (1) US3754321A (de)
AT (1) AT312054B (de)
CH (1) CH522954A (de)
DE (1) DE2013220A1 (de)
FR (1) FR2083421B1 (de)
GB (1) GB1310806A (de)
NL (1) NL7103588A (de)
SE (1) SE378154B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999318A (en) * 1986-11-12 1991-03-12 Hitachi, Ltd. Method for forming metal layer interconnects using stepped via walls

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
US3571913A (en) * 1968-08-20 1971-03-23 Hewlett Packard Co Method of making ohmic contact to a shallow diffused transistor
ES374318A1 (es) * 1968-12-10 1972-03-16 Matsushita Electronics Corp Un metodo de fabricar un dispositivo semiconductor sensiblea la presion.

Also Published As

Publication number Publication date
FR2083421A1 (de) 1971-12-17
DE2013220A1 (de) 1971-11-25
AT312054B (de) 1973-12-10
FR2083421B1 (de) 1977-01-21
GB1310806A (en) 1973-03-21
US3754321A (en) 1973-08-28
CH522954A (de) 1972-05-15
NL7103588A (de) 1971-09-21

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