AT278906B - Verfahren zum Herstellen von Halbleiterbauelementen mit Kontakten - Google Patents
Verfahren zum Herstellen von Halbleiterbauelementen mit KontaktenInfo
- Publication number
- AT278906B AT278906B AT757268A AT757268A AT278906B AT 278906 B AT278906 B AT 278906B AT 757268 A AT757268 A AT 757268A AT 757268 A AT757268 A AT 757268A AT 278906 B AT278906 B AT 278906B
- Authority
- AT
- Austria
- Prior art keywords
- contacts
- semiconductor components
- manufacturing semiconductor
- manufacturing
- components
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05166—Titanium [Ti] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05669—Platinum [Pt] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01072—Hafnium [Hf]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65837767A | 1967-08-04 | 1967-08-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
AT278906B true AT278906B (de) | 1970-02-25 |
Family
ID=24641005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT757268A AT278906B (de) | 1967-08-04 | 1968-08-02 | Verfahren zum Herstellen von Halbleiterbauelementen mit Kontakten |
Country Status (9)
Country | Link |
---|---|
US (1) | US3507756A (de) |
AT (1) | AT278906B (de) |
BE (1) | BE718867A (de) |
CH (1) | CH482306A (de) |
ES (1) | ES356784A1 (de) |
FR (1) | FR1578320A (de) |
GB (1) | GB1226814A (de) |
IL (1) | IL30464A (de) |
NL (1) | NL6811007A (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3658489A (en) * | 1968-08-09 | 1972-04-25 | Nippon Electric Co | Laminated electrode for a semiconductor device |
US3953266A (en) * | 1968-11-28 | 1976-04-27 | Toshio Takai | Process for fabricating a semiconductor device |
US3620932A (en) * | 1969-05-05 | 1971-11-16 | Trw Semiconductors Inc | Beam leads and method of fabrication |
DE1954499A1 (de) * | 1969-10-29 | 1971-05-06 | Siemens Ag | Verfahren zur Herstellung von Halbleiterschaltkreisen mit Leitbahnen |
US3634202A (en) * | 1970-05-19 | 1972-01-11 | Lignes Telegraph Telephon | Process for the production of thick film conductors and circuits incorporating such conductors |
US3668484A (en) * | 1970-10-28 | 1972-06-06 | Rca Corp | Semiconductor device with multi-level metalization and method of making the same |
JPS5515874B1 (de) * | 1971-06-08 | 1980-04-26 | ||
FR2209216B1 (de) * | 1972-11-30 | 1977-09-30 | Ibm | |
US4988412A (en) * | 1988-12-27 | 1991-01-29 | General Electric Company | Selective electrolytic desposition on conductive and non-conductive substrates |
JP3166221B2 (ja) * | 1991-07-23 | 2001-05-14 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP2861629B2 (ja) * | 1992-05-27 | 1999-02-24 | 日本電気株式会社 | 半導体装置 |
US5679982A (en) * | 1993-02-24 | 1997-10-21 | Intel Corporation | Barrier against metal diffusion |
EP0877417A1 (de) * | 1997-05-09 | 1998-11-11 | Lucent Technologies Inc. | Verfahren zur Herstellung von Elektroden und anderen elektrisch leitenden Strukturen |
US6836015B2 (en) * | 2003-05-02 | 2004-12-28 | International Business Machines Corporation | Optical assemblies for transmitting and manipulating optical beams |
US6922294B2 (en) * | 2003-05-02 | 2005-07-26 | International Business Machines Corporation | Optical communication assembly |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3287612A (en) * | 1963-12-17 | 1966-11-22 | Bell Telephone Labor Inc | Semiconductor contacts and protective coatings for planar devices |
US3386894A (en) * | 1964-09-28 | 1968-06-04 | Northern Electric Co | Formation of metallic contacts |
US3388048A (en) * | 1965-12-07 | 1968-06-11 | Bell Telephone Labor Inc | Fabrication of beam lead semiconductor devices |
-
1967
- 1967-08-04 US US658377A patent/US3507756A/en not_active Expired - Lifetime
-
1968
- 1968-04-18 GB GB1226814D patent/GB1226814A/en not_active Expired
- 1968-07-17 ES ES356784A patent/ES356784A1/es not_active Expired
- 1968-07-29 IL IL30464A patent/IL30464A/en unknown
- 1968-07-31 BE BE718867D patent/BE718867A/xx unknown
- 1968-08-02 AT AT757268A patent/AT278906B/de not_active IP Right Cessation
- 1968-08-02 NL NL6811007A patent/NL6811007A/xx unknown
- 1968-08-02 FR FR1578320D patent/FR1578320A/fr not_active Expired
- 1968-08-05 CH CH1171068A patent/CH482306A/de unknown
Also Published As
Publication number | Publication date |
---|---|
CH482306A (de) | 1969-11-30 |
GB1226814A (de) | 1971-03-31 |
IL30464A (en) | 1971-04-28 |
FR1578320A (de) | 1969-08-14 |
NL6811007A (de) | 1969-02-06 |
US3507756A (en) | 1970-04-21 |
BE718867A (de) | 1968-12-31 |
IL30464A0 (en) | 1968-09-26 |
ES356784A1 (es) | 1970-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |