AT259016B - Verfahren zum Herstellen von Halbleiteranordnungen - Google Patents
Verfahren zum Herstellen von HalbleiteranordnungenInfo
- Publication number
- AT259016B AT259016B AT23566A AT23566A AT259016B AT 259016 B AT259016 B AT 259016B AT 23566 A AT23566 A AT 23566A AT 23566 A AT23566 A AT 23566A AT 259016 B AT259016 B AT 259016B
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor devices
- manufacturing semiconductor
- manufacturing
- devices
- semiconductor
- Prior art date
Links
Classifications
-
- H10P95/00—
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- H10P32/00—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/974—Substrate surface preparation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0094987 | 1965-01-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT259016B true AT259016B (de) | 1967-12-27 |
Family
ID=7519067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT23566A AT259016B (de) | 1965-01-13 | 1966-01-11 | Verfahren zum Herstellen von Halbleiteranordnungen |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3498853A (de) |
| AT (1) | AT259016B (de) |
| CH (1) | CH482299A (de) |
| DE (1) | DE1544257A1 (de) |
| FR (1) | FR1463489A (de) |
| GB (1) | GB1115101A (de) |
| NL (1) | NL6516911A (de) |
| SE (1) | SE334421B (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1764004A1 (de) * | 1968-03-20 | 1971-04-08 | Siemens Ag | Verfahren zum Herstellen eines Hochfrequenztransistors aus Silicium |
| DE2408829C2 (de) * | 1974-02-23 | 1984-03-22 | Ibm Deutschland Gmbh, 7000 Stuttgart | Bor-Ionenquell-Material und Verfahren zu seiner Herstellung |
| CN104557532B (zh) * | 2015-01-13 | 2017-03-01 | 西安力邦制药有限公司 | 二联苯衍生物及其应用 |
| CN114823977B (zh) * | 2022-04-25 | 2024-02-23 | 中国科学技术大学 | 氧化镓光电探测器的制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2930722A (en) * | 1959-02-03 | 1960-03-29 | Bell Telephone Labor Inc | Method of treating silicon |
| US3147152A (en) * | 1960-01-28 | 1964-09-01 | Western Electric Co | Diffusion control in semiconductive bodies |
| NL130054C (de) * | 1960-02-12 | |||
| US3168422A (en) * | 1960-05-09 | 1965-02-02 | Merck & Co Inc | Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited |
| US3210225A (en) * | 1961-08-18 | 1965-10-05 | Texas Instruments Inc | Method of making transistor |
| GB1052379A (de) * | 1963-03-28 | 1900-01-01 | ||
| US3258359A (en) * | 1963-04-08 | 1966-06-28 | Siliconix Inc | Semiconductor etch and oxidation process |
| US3255056A (en) * | 1963-05-20 | 1966-06-07 | Rca Corp | Method of forming semiconductor junction |
-
1965
- 1965-01-13 DE DE19651544257 patent/DE1544257A1/de active Pending
- 1965-12-24 NL NL6516911A patent/NL6516911A/xx unknown
-
1966
- 1966-01-07 US US519237A patent/US3498853A/en not_active Expired - Lifetime
- 1966-01-11 CH CH35166A patent/CH482299A/de not_active IP Right Cessation
- 1966-01-11 AT AT23566A patent/AT259016B/de active
- 1966-01-11 SE SE00335/66A patent/SE334421B/xx unknown
- 1966-01-12 GB GB1401/66A patent/GB1115101A/en not_active Expired
- 1966-01-12 FR FR45633A patent/FR1463489A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3498853A (en) | 1970-03-03 |
| DE1544257A1 (de) | 1970-03-26 |
| NL6516911A (de) | 1966-07-14 |
| GB1115101A (en) | 1968-05-29 |
| FR1463489A (fr) | 1966-12-23 |
| CH482299A (de) | 1969-11-30 |
| SE334421B (de) | 1971-04-26 |
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