AT259016B - Verfahren zum Herstellen von Halbleiteranordnungen - Google Patents

Verfahren zum Herstellen von Halbleiteranordnungen

Info

Publication number
AT259016B
AT259016B AT23566A AT23566A AT259016B AT 259016 B AT259016 B AT 259016B AT 23566 A AT23566 A AT 23566A AT 23566 A AT23566 A AT 23566A AT 259016 B AT259016 B AT 259016B
Authority
AT
Austria
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Application number
AT23566A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT259016B publication Critical patent/AT259016B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/974Substrate surface preparation
AT23566A 1965-01-13 1966-01-11 Verfahren zum Herstellen von Halbleiteranordnungen AT259016B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0094987 1965-01-13

Publications (1)

Publication Number Publication Date
AT259016B true AT259016B (de) 1967-12-27

Family

ID=7519067

Family Applications (1)

Application Number Title Priority Date Filing Date
AT23566A AT259016B (de) 1965-01-13 1966-01-11 Verfahren zum Herstellen von Halbleiteranordnungen

Country Status (8)

Country Link
US (1) US3498853A (de)
AT (1) AT259016B (de)
CH (1) CH482299A (de)
DE (1) DE1544257A1 (de)
FR (1) FR1463489A (de)
GB (1) GB1115101A (de)
NL (1) NL6516911A (de)
SE (1) SE334421B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764004A1 (de) * 1968-03-20 1971-04-08 Siemens Ag Verfahren zum Herstellen eines Hochfrequenztransistors aus Silicium
DE2408829C2 (de) * 1974-02-23 1984-03-22 Ibm Deutschland Gmbh, 7000 Stuttgart Bor-Ionenquell-Material und Verfahren zu seiner Herstellung
CN104557532B (zh) * 2015-01-13 2017-03-01 西安力邦制药有限公司 二联苯衍生物及其应用
CN114823977B (zh) * 2022-04-25 2024-02-23 中国科学技术大学 氧化镓光电探测器的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
US3147152A (en) * 1960-01-28 1964-09-01 Western Electric Co Diffusion control in semiconductive bodies
NL260906A (de) * 1960-02-12
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
GB1052379A (de) * 1963-03-28 1900-01-01
US3258359A (en) * 1963-04-08 1966-06-28 Siliconix Inc Semiconductor etch and oxidation process
US3255056A (en) * 1963-05-20 1966-06-07 Rca Corp Method of forming semiconductor junction

Also Published As

Publication number Publication date
NL6516911A (de) 1966-07-14
DE1544257A1 (de) 1970-03-26
FR1463489A (fr) 1966-12-23
GB1115101A (en) 1968-05-29
US3498853A (en) 1970-03-03
SE334421B (de) 1971-04-26
CH482299A (de) 1969-11-30

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