CH444828A - Verfahren zum Herstellen von Halbleiterbauelementen - Google Patents
Verfahren zum Herstellen von HalbleiterbauelementenInfo
- Publication number
- CH444828A CH444828A CH697564A CH697564A CH444828A CH 444828 A CH444828 A CH 444828A CH 697564 A CH697564 A CH 697564A CH 697564 A CH697564 A CH 697564A CH 444828 A CH444828 A CH 444828A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor components
- manufacturing semiconductor
- manufacturing
- components
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/923—Diffusion through a layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/945—Special, e.g. metal
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0086695 | 1963-08-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH444828A true CH444828A (de) | 1967-10-15 |
Family
ID=7513206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH697564A CH444828A (de) | 1963-08-12 | 1964-05-28 | Verfahren zum Herstellen von Halbleiterbauelementen |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3347719A (de) |
| CH (1) | CH444828A (de) |
| DE (1) | DE1444538A1 (de) |
| GB (1) | GB1031446A (de) |
| NL (1) | NL6408973A (de) |
| SE (1) | SE318861B (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3484313A (en) * | 1965-03-25 | 1969-12-16 | Hitachi Ltd | Method of manufacturing semiconductor devices |
| US3451867A (en) * | 1966-05-31 | 1969-06-24 | Gen Electric | Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer |
| US3545967A (en) * | 1966-09-28 | 1970-12-08 | Aerojet General Co | Metal-semiconductor alloys for thin-film resistors |
| US3974002A (en) * | 1974-06-10 | 1976-08-10 | Bell Telephone Laboratories, Incorporated | MBE growth: gettering contaminants and fabricating heterostructure junction lasers |
| US4843037A (en) * | 1987-08-21 | 1989-06-27 | Bell Communications Research, Inc. | Passivation of indium gallium arsenide surfaces |
| DE3877877T2 (de) * | 1987-09-21 | 1993-05-19 | Nat Semiconductor Corp | Veraenderung der grenzschichtfelder zwischen isolatoren und halbleitern. |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2823149A (en) * | 1953-10-27 | 1958-02-11 | Sprague Electric Co | Process of forming barrier layers in crystalline bodies |
| US3210225A (en) * | 1961-08-18 | 1965-10-05 | Texas Instruments Inc | Method of making transistor |
| US3156593A (en) * | 1961-11-17 | 1964-11-10 | Bell Telephone Labor Inc | Fabrication of semiconductor devices |
| US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
-
1963
- 1963-08-12 DE DE19631444538 patent/DE1444538A1/de active Pending
-
1964
- 1964-05-28 CH CH697564A patent/CH444828A/de unknown
- 1964-06-24 SE SE7705/64A patent/SE318861B/xx unknown
- 1964-08-05 NL NL6408973A patent/NL6408973A/xx unknown
- 1964-08-10 US US389519A patent/US3347719A/en not_active Expired - Lifetime
- 1964-08-11 GB GB32635/64A patent/GB1031446A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1031446A (en) | 1966-06-02 |
| DE1444538A1 (de) | 1968-12-12 |
| NL6408973A (de) | 1965-02-15 |
| US3347719A (en) | 1967-10-17 |
| SE318861B (de) | 1969-12-22 |
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