CH401273A - Verfahren zum Herstellen von Halbleiterelementen - Google Patents

Verfahren zum Herstellen von Halbleiterelementen

Info

Publication number
CH401273A
CH401273A CH589962A CH589962A CH401273A CH 401273 A CH401273 A CH 401273A CH 589962 A CH589962 A CH 589962A CH 589962 A CH589962 A CH 589962A CH 401273 A CH401273 A CH 401273A
Authority
CH
Switzerland
Prior art keywords
semiconductor elements
manufacturing semiconductor
manufacturing
elements
semiconductor
Prior art date
Application number
CH589962A
Other languages
English (en)
Inventor
P Barbaro Ernest
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH401273A publication Critical patent/CH401273A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/904Charge carrier lifetime control
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/964Roughened surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
CH589962A 1961-07-20 1962-05-15 Verfahren zum Herstellen von Halbleiterelementen CH401273A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US125503A US3209428A (en) 1961-07-20 1961-07-20 Process for treating semiconductor devices

Publications (1)

Publication Number Publication Date
CH401273A true CH401273A (de) 1965-10-31

Family

ID=22420015

Family Applications (1)

Application Number Title Priority Date Filing Date
CH589962A CH401273A (de) 1961-07-20 1962-05-15 Verfahren zum Herstellen von Halbleiterelementen

Country Status (3)

Country Link
US (1) US3209428A (de)
CH (1) CH401273A (de)
DE (1) DE1199410B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1239778B (de) * 1963-11-16 1967-05-03 Siemens Ag Schaltbares Halbleiterbauelement von pnpn-Typ
GB1030670A (en) * 1964-12-02 1966-05-25 Standard Telephones Cables Ltd Semiconductor devices
GB1095576A (de) * 1964-08-12 1900-01-01
US3387192A (en) * 1965-05-19 1968-06-04 Irc Inc Four layer planar semiconductor switch and method of making the same
DE1489694B2 (de) * 1965-07-10 1971-09-02 Brown, Boven & Cie AG, 6800 Mann heim Verfahren zum herstellen eines halbleiterbauelementes mit gestoerten kristallschichten an der oberflaeche
DE1514520B1 (de) * 1965-07-30 1971-04-01 Siemens Ag Steuerbares Halbleiterbauelement
US5696402A (en) * 1965-09-28 1997-12-09 Li; Chou H. Integrated circuit device
US7038290B1 (en) 1965-09-28 2006-05-02 Li Chou H Integrated circuit device
US4946800A (en) * 1965-09-28 1990-08-07 Li Chou H Method for making solid-state device utilizing isolation grooves
US3475235A (en) * 1966-10-05 1969-10-28 Westinghouse Electric Corp Process for fabricating a semiconductor device
US3881963A (en) * 1973-01-18 1975-05-06 Westinghouse Electric Corp Irradiation for fast switching thyristors
DE3844649C2 (de) * 1987-06-23 1992-04-23 Taiyo Sanso Co. Ltd., Osaka, Jp
US5593902A (en) * 1994-05-23 1997-01-14 Texas Instruments Incorporated Method of making photodiodes for low dark current operation having geometric enhancement
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US20100276733A1 (en) * 2000-09-27 2010-11-04 Li Choa H Solid-state circuit device
US7118942B1 (en) 2000-09-27 2006-10-10 Li Chou H Method of making atomic integrated circuit device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2560594A (en) * 1948-09-24 1951-07-17 Bell Telephone Labor Inc Semiconductor translator and method of making it
US2953730A (en) * 1952-11-07 1960-09-20 Rca Corp High frequency semiconductor devices
US2935453A (en) * 1957-04-11 1960-05-03 Sylvania Electric Prod Manufacture of semiconductive translating devices
US2987799A (en) * 1957-07-15 1961-06-13 Pacific Semiconductors Inc Mobile particle entrapment method
US3012921A (en) * 1958-08-20 1961-12-12 Philco Corp Controlled jet etching of semiconductor units
US3009841A (en) * 1959-03-06 1961-11-21 Westinghouse Electric Corp Preparation of semiconductor devices having uniform junctions
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
US3023347A (en) * 1960-07-15 1962-02-27 Westinghouse Electric Corp Oscillator having predetermined temperature-frequency characteristics
NL268758A (de) * 1960-09-20

Also Published As

Publication number Publication date
US3209428A (en) 1965-10-05
DE1199410B (de) 1965-08-26

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