NL6408973A - - Google Patents

Info

Publication number
NL6408973A
NL6408973A NL6408973A NL6408973A NL6408973A NL 6408973 A NL6408973 A NL 6408973A NL 6408973 A NL6408973 A NL 6408973A NL 6408973 A NL6408973 A NL 6408973A NL 6408973 A NL6408973 A NL 6408973A
Authority
NL
Netherlands
Application number
NL6408973A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6408973A publication Critical patent/NL6408973A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL6408973A 1963-08-12 1964-08-05 NL6408973A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0086695 1963-08-12

Publications (1)

Publication Number Publication Date
NL6408973A true NL6408973A (de) 1965-02-15

Family

ID=7513206

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6408973A NL6408973A (de) 1963-08-12 1964-08-05

Country Status (6)

Country Link
US (1) US3347719A (de)
CH (1) CH444828A (de)
DE (1) DE1444538A1 (de)
GB (1) GB1031446A (de)
NL (1) NL6408973A (de)
SE (1) SE318861B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484313A (en) * 1965-03-25 1969-12-16 Hitachi Ltd Method of manufacturing semiconductor devices
US3451867A (en) * 1966-05-31 1969-06-24 Gen Electric Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer
US3545967A (en) * 1966-09-28 1970-12-08 Aerojet General Co Metal-semiconductor alloys for thin-film resistors
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
US4843037A (en) * 1987-08-21 1989-06-27 Bell Communications Research, Inc. Passivation of indium gallium arsenide surfaces
DE3877877T2 (de) * 1987-09-21 1993-05-19 Nat Semiconductor Corp Veraenderung der grenzschichtfelder zwischen isolatoren und halbleitern.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2823149A (en) * 1953-10-27 1958-02-11 Sprague Electric Co Process of forming barrier layers in crystalline bodies
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
US3156593A (en) * 1961-11-17 1964-11-10 Bell Telephone Labor Inc Fabrication of semiconductor devices
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device

Also Published As

Publication number Publication date
CH444828A (de) 1967-10-15
DE1444538A1 (de) 1968-12-12
SE318861B (de) 1969-12-22
GB1031446A (en) 1966-06-02
US3347719A (en) 1967-10-17

Similar Documents

Publication Publication Date Title
BE627172A (de)
BE627151A (de)
BE626867A (de)
NL6408973A (de)
BE626826A (de)
BE626803A (de)
BE626590A (de)
BE626358A (de)
BE625880A (de)
BE625828A (de)
BE625825A (de)
BE625136A (de)
BE624982A (de)
BE624811A (de)
BE624070A (de)
BE623490A (de)
BE623315A (de)
BE623220A (de)
BE623162A (de)
BE623117A (de)
BE622160A (de)
BE621517A (de)
BE621232A (de)
BE631981A (de)
BE645790A (de)