CH482306A - Verfahren zur Herstellung einer mit Kontakten versehenen Halbleiter-Anordnung - Google Patents

Verfahren zur Herstellung einer mit Kontakten versehenen Halbleiter-Anordnung

Info

Publication number
CH482306A
CH482306A CH1171068A CH1171068A CH482306A CH 482306 A CH482306 A CH 482306A CH 1171068 A CH1171068 A CH 1171068A CH 1171068 A CH1171068 A CH 1171068A CH 482306 A CH482306 A CH 482306A
Authority
CH
Switzerland
Prior art keywords
contacts
production
semiconductor device
device provided
semiconductor
Prior art date
Application number
CH1171068A
Other languages
English (en)
Inventor
Addison Wenger James
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH482306A publication Critical patent/CH482306A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CH1171068A 1967-08-04 1968-08-05 Verfahren zur Herstellung einer mit Kontakten versehenen Halbleiter-Anordnung CH482306A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65837767A 1967-08-04 1967-08-04

Publications (1)

Publication Number Publication Date
CH482306A true CH482306A (de) 1969-11-30

Family

ID=24641005

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1171068A CH482306A (de) 1967-08-04 1968-08-05 Verfahren zur Herstellung einer mit Kontakten versehenen Halbleiter-Anordnung

Country Status (9)

Country Link
US (1) US3507756A (de)
AT (1) AT278906B (de)
BE (1) BE718867A (de)
CH (1) CH482306A (de)
ES (1) ES356784A1 (de)
FR (1) FR1578320A (de)
GB (1) GB1226814A (de)
IL (1) IL30464A (de)
NL (1) NL6811007A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2209216A1 (de) * 1972-11-30 1974-06-28 Ibm

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3658489A (en) * 1968-08-09 1972-04-25 Nippon Electric Co Laminated electrode for a semiconductor device
US3953266A (en) * 1968-11-28 1976-04-27 Toshio Takai Process for fabricating a semiconductor device
US3620932A (en) * 1969-05-05 1971-11-16 Trw Semiconductors Inc Beam leads and method of fabrication
DE1954499A1 (de) * 1969-10-29 1971-05-06 Siemens Ag Verfahren zur Herstellung von Halbleiterschaltkreisen mit Leitbahnen
US3634202A (en) * 1970-05-19 1972-01-11 Lignes Telegraph Telephon Process for the production of thick film conductors and circuits incorporating such conductors
US3668484A (en) * 1970-10-28 1972-06-06 Rca Corp Semiconductor device with multi-level metalization and method of making the same
JPS5515874B1 (de) * 1971-06-08 1980-04-26
US4988412A (en) * 1988-12-27 1991-01-29 General Electric Company Selective electrolytic desposition on conductive and non-conductive substrates
JP3166221B2 (ja) * 1991-07-23 2001-05-14 日本電気株式会社 半導体装置及びその製造方法
JP2861629B2 (ja) * 1992-05-27 1999-02-24 日本電気株式会社 半導体装置
US5783483A (en) * 1993-02-24 1998-07-21 Intel Corporation Method of fabricating a barrier against metal diffusion
EP0877417A1 (de) * 1997-05-09 1998-11-11 Lucent Technologies Inc. Verfahren zur Herstellung von Elektroden und anderen elektrisch leitenden Strukturen
US6922294B2 (en) * 2003-05-02 2005-07-26 International Business Machines Corporation Optical communication assembly
US6836015B2 (en) * 2003-05-02 2004-12-28 International Business Machines Corporation Optical assemblies for transmitting and manipulating optical beams

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287612A (en) * 1963-12-17 1966-11-22 Bell Telephone Labor Inc Semiconductor contacts and protective coatings for planar devices
US3386894A (en) * 1964-09-28 1968-06-04 Northern Electric Co Formation of metallic contacts
US3388048A (en) * 1965-12-07 1968-06-11 Bell Telephone Labor Inc Fabrication of beam lead semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2209216A1 (de) * 1972-11-30 1974-06-28 Ibm

Also Published As

Publication number Publication date
IL30464A (en) 1971-04-28
NL6811007A (de) 1969-02-06
FR1578320A (de) 1969-08-14
ES356784A1 (es) 1970-02-01
US3507756A (en) 1970-04-21
IL30464A0 (en) 1968-09-26
BE718867A (de) 1968-12-31
GB1226814A (de) 1971-03-31
AT278906B (de) 1970-02-25

Similar Documents

Publication Publication Date Title
CH513514A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT280349B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT261004B (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH533907A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT280350B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
AT282933B (de) Verfahren zur Herstellung von Polyolefinen
CH512144A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH482306A (de) Verfahren zur Herstellung einer mit Kontakten versehenen Halbleiter-Anordnung
CH505470A (de) Verfahren zur Herstellung einer Halbleitervorrichtung und gemäss diesem Verfahren hergestellte Halbleitervorrichtung
CH520176A (de) Verfahren zur Herstellung einer thermoplastischen Formmasse
CH530714A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT299311B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH395349A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH423999A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT310338B (de) Vorrichtung zur automatischen Herstellung einer mehrfarbigen Rasterzeichnung
CH541424A (de) Verfahren zur Herstellung einer kupferkaschierten Kunststoffplatte
CH520405A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH502278A (de) Verfahren zur Herstellung einer Glaskeramik
CH474856A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH519790A (de) Verfahren zur Herstellung einer Halbleiteranordnung
AT299309B (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH504395A (de) Verfahren zur Herstellung einer Hydroxyindanverbindung
CH474158A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH474858A (de) Verfahren zur Herstellung einer planaren doppeldiffundierten Halbleiteranordnung
CH470759A (de) Verfahren zur Herstellung eines Halbleiterbauelementes