CH479163A - Method for manufacturing a semiconductor component - Google Patents

Method for manufacturing a semiconductor component

Info

Publication number
CH479163A
CH479163A CH1709368A CH1709368A CH479163A CH 479163 A CH479163 A CH 479163A CH 1709368 A CH1709368 A CH 1709368A CH 1709368 A CH1709368 A CH 1709368A CH 479163 A CH479163 A CH 479163A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor component
semiconductor
component
Prior art date
Application number
CH1709368A
Other languages
German (de)
Inventor
Richard Chenette Eugene
Edwards Roger
Alan Pedersen Richard
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH479163A publication Critical patent/CH479163A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
CH1709368A 1967-11-15 1968-11-15 Method for manufacturing a semiconductor component CH479163A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68323867A 1967-11-15 1967-11-15

Publications (1)

Publication Number Publication Date
CH479163A true CH479163A (en) 1969-09-30

Family

ID=24743141

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1709368A CH479163A (en) 1967-11-15 1968-11-15 Method for manufacturing a semiconductor component

Country Status (9)

Country Link
AT (1) AT302417B (en)
BE (1) BE723876A (en)
CH (1) CH479163A (en)
DE (1) DE1808342A1 (en)
ES (1) ES360641A1 (en)
FR (1) FR1591489A (en)
GB (1) GB1252565A (en)
NL (1) NL6816152A (en)
SE (1) SE341222B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2064084A1 (en) * 1969-12-30 1971-07-08 Ibm Schottky barrier transistor
DE2601131A1 (en) * 1975-04-17 1976-10-28 Agency Ind Science Techn SEMI-CONDUCTOR DEVICES OF THE PRESSURE CONTACT TYPE
EP0005185A1 (en) * 1978-05-01 1979-11-14 International Business Machines Corporation Method for simultaneously forming Schottky-barrier diodes and ohmic contacts on doped semiconductor regions

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA965189A (en) * 1972-01-03 1975-03-25 Signetics Corporation Semiconductor structure using platinel silicide as a schottky barrier diode and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2064084A1 (en) * 1969-12-30 1971-07-08 Ibm Schottky barrier transistor
FR2072116A1 (en) * 1969-12-30 1971-09-24 Ibm
DE2601131A1 (en) * 1975-04-17 1976-10-28 Agency Ind Science Techn SEMI-CONDUCTOR DEVICES OF THE PRESSURE CONTACT TYPE
EP0005185A1 (en) * 1978-05-01 1979-11-14 International Business Machines Corporation Method for simultaneously forming Schottky-barrier diodes and ohmic contacts on doped semiconductor regions

Also Published As

Publication number Publication date
BE723876A (en) 1969-04-16
GB1252565A (en) 1971-11-10
ES360641A1 (en) 1970-07-16
DE1808342A1 (en) 1970-04-09
FR1591489A (en) 1970-04-27
DE1808342B2 (en) 1970-09-10
AT302417B (en) 1972-10-10
SE341222B (en) 1971-12-20
NL6816152A (en) 1969-05-19

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Legal Events

Date Code Title Description
PL Patent ceased