CH490737A - Method for manufacturing a semiconductor device - Google Patents

Method for manufacturing a semiconductor device

Info

Publication number
CH490737A
CH490737A CH622669A CH622669A CH490737A CH 490737 A CH490737 A CH 490737A CH 622669 A CH622669 A CH 622669A CH 622669 A CH622669 A CH 622669A CH 490737 A CH490737 A CH 490737A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH622669A
Other languages
German (de)
Inventor
Kraft Wolfgang
Schilling Harald
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of CH490737A publication Critical patent/CH490737A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
CH622669A 1968-04-27 1969-04-24 Method for manufacturing a semiconductor device CH490737A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769271 DE1769271C3 (en) 1968-04-27 1968-04-27 Method of manufacturing a solid-state circuit

Publications (1)

Publication Number Publication Date
CH490737A true CH490737A (en) 1970-05-15

Family

ID=5700073

Family Applications (1)

Application Number Title Priority Date Filing Date
CH622669A CH490737A (en) 1968-04-27 1969-04-24 Method for manufacturing a semiconductor device

Country Status (4)

Country Link
CH (1) CH490737A (en)
DE (1) DE1769271C3 (en)
FR (1) FR2007542A1 (en)
GB (1) GB1231543A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2383521A1 (en) * 1977-03-12 1978-10-06 Itt Monolithic semiconductor circuit with bipolar analogs - has additional epitaxially grown layer of higher impurity concentration penetrated during mfg. processes

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2608267A1 (en) * 1976-02-28 1977-09-08 Itt Ind Gmbh Deutsche METHOD OF MANUFACTURING A MONOLITHIC INTEGRATED CIRCUIT
US4132573A (en) * 1977-02-08 1979-01-02 Murata Manufacturing Co., Ltd. Method of manufacturing a monolithic integrated circuit utilizing epitaxial deposition and simultaneous outdiffusion

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2383521A1 (en) * 1977-03-12 1978-10-06 Itt Monolithic semiconductor circuit with bipolar analogs - has additional epitaxially grown layer of higher impurity concentration penetrated during mfg. processes

Also Published As

Publication number Publication date
DE1769271C3 (en) 1975-04-30
DE1769271B2 (en) 1973-11-22
FR2007542A1 (en) 1970-01-09
DE1769271A1 (en) 1970-12-17
GB1231543A (en) 1971-05-12

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Legal Events

Date Code Title Description
PL Patent ceased