CH457630A - Method for manufacturing a semiconductor detector - Google Patents
Method for manufacturing a semiconductor detectorInfo
- Publication number
- CH457630A CH457630A CH382567A CH382567A CH457630A CH 457630 A CH457630 A CH 457630A CH 382567 A CH382567 A CH 382567A CH 382567 A CH382567 A CH 382567A CH 457630 A CH457630 A CH 457630A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacturing
- semiconductor detector
- detector
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
- H01L31/1175—Li compensated PIN gamma-ray detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT262566A AT261766B (en) | 1966-03-18 | 1966-03-18 | Method for manufacturing a drifted semiconductor detector |
Publications (1)
Publication Number | Publication Date |
---|---|
CH457630A true CH457630A (en) | 1968-06-15 |
Family
ID=3537590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH382567A CH457630A (en) | 1966-03-18 | 1967-03-15 | Method for manufacturing a semiconductor detector |
Country Status (6)
Country | Link |
---|---|
US (1) | US3546459A (en) |
AT (1) | AT261766B (en) |
CH (1) | CH457630A (en) |
DE (1) | DE1614317A1 (en) |
FR (1) | FR1514734A (en) |
GB (1) | GB1115939A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2118846A1 (en) * | 1970-12-22 | 1972-08-04 | Radiotechnique Compelec | Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material |
US4056726A (en) * | 1975-10-01 | 1977-11-01 | Princeton Gamma-Tech, Inc. | Coaxial gamma ray detector and method therefor |
US4163240A (en) * | 1977-03-21 | 1979-07-31 | The Harshaw Chemical Company | Sensitive silicon pin diode fast neutron dosimeter |
US4214253A (en) * | 1977-06-13 | 1980-07-22 | General Electric Company | Radiation detector |
US9269847B2 (en) | 2013-03-15 | 2016-02-23 | Canberra Industries, Inc. | Small anode germanium (SAGe) well radiation detector system and method |
US10048389B1 (en) | 2017-04-19 | 2018-08-14 | Mirion Technologies (Canberra), Inc. | Centroid contact radiation detector system and method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1863843A (en) * | 1925-01-07 | 1932-06-21 | Union Switch & Signal Co | Process of preparing metal for use in unidirectional current carrying devices |
US2945955A (en) * | 1955-11-12 | 1960-07-19 | Atomic Energy Authority Uk | Apparatus for detecting radioactive particle emission |
US3005100A (en) * | 1956-06-12 | 1961-10-17 | Theos J Thompson | Nuclear scintillation monitor |
US3225198A (en) * | 1961-05-16 | 1965-12-21 | Hughes Aircraft Co | Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region |
GB1058753A (en) * | 1962-11-02 | 1967-02-15 | Ass Elect Ind | Improvements relating to solid state devices |
-
1966
- 1966-03-18 AT AT262566A patent/AT261766B/en active
-
1967
- 1967-03-15 DE DE19671614317 patent/DE1614317A1/en active Pending
- 1967-03-15 CH CH382567A patent/CH457630A/en unknown
- 1967-03-16 FR FR99060A patent/FR1514734A/en not_active Expired
- 1967-03-17 US US624086A patent/US3546459A/en not_active Expired - Lifetime
- 1967-03-20 GB GB12913/67A patent/GB1115939A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1614317A1 (en) | 1970-07-02 |
AT261766B (en) | 1968-05-10 |
US3546459A (en) | 1970-12-08 |
GB1115939A (en) | 1968-06-06 |
FR1514734A (en) | 1968-02-23 |
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