AT258364B - Method for manufacturing semiconductor devices - Google Patents

Method for manufacturing semiconductor devices

Info

Publication number
AT258364B
AT258364B AT146166A AT146166A AT258364B AT 258364 B AT258364 B AT 258364B AT 146166 A AT146166 A AT 146166A AT 146166 A AT146166 A AT 146166A AT 258364 B AT258364 B AT 258364B
Authority
AT
Austria
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Application number
AT146166A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT258364B publication Critical patent/AT258364B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/052—Face to face deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/913—Diverse treatments performed in unitary chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
AT146166A 1965-02-18 1966-02-17 Method for manufacturing semiconductor devices AT258364B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES95520A DE1287047B (en) 1965-02-18 1965-02-18 Method and device for depositing a monocrystalline semiconductor layer

Publications (1)

Publication Number Publication Date
AT258364B true AT258364B (en) 1967-11-27

Family

ID=7519442

Family Applications (1)

Application Number Title Priority Date Filing Date
AT146166A AT258364B (en) 1965-02-18 1966-02-17 Method for manufacturing semiconductor devices

Country Status (7)

Country Link
US (1) US3425878A (en)
AT (1) AT258364B (en)
CH (1) CH444827A (en)
DE (1) DE1287047B (en)
GB (1) GB1132491A (en)
NL (1) NL6602149A (en)
SE (1) SE317652B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636919A (en) * 1969-12-02 1972-01-25 Univ Ohio State Apparatus for growing films
DE1769605A1 (en) * 1968-06-14 1971-07-01 Siemens Ag Method for producing epitaxial growth layers from semiconductor material for electrical components
US3839991A (en) * 1969-07-17 1974-10-08 Siemens Ag Apparatus for the production of homogeneous and plane parallel epitactic growth layers of semiconducting compounds by melt epitaxy
US3648654A (en) * 1970-03-16 1972-03-14 Bell Telephone Labor Inc Vertical liquid phase crystal growth apparatus
DE2229229A1 (en) * 1972-06-15 1974-01-10 Siemens Ag PROCESS FOR PRODUCING MOLDED BODIES FROM SILICON OR SILICON CARBIDE
US4171996A (en) * 1975-08-12 1979-10-23 Gosudarstvenny Nauchno-Issledovatelsky i Proektny Institut Redkonetallicheskoi Promyshlennosti "Giredmet" Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
US4262630A (en) * 1977-01-04 1981-04-21 Bochkarev Ellin P Method of applying layers of source substance over recipient and device for realizing same
US4063529A (en) * 1977-04-19 1977-12-20 Ellin Petrovich Bochkarev Device for epitaxial growing of semiconductor periodic structures from gas phase
US4555303A (en) * 1984-10-02 1985-11-26 Motorola, Inc. Oxidation of material in high pressure oxygen plasma
US4601779A (en) * 1985-06-24 1986-07-22 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL265823A (en) * 1960-06-13
NL268294A (en) * 1960-10-10
NL271345A (en) * 1960-11-30
US3172792A (en) * 1961-07-05 1965-03-09 Epitaxial deposition in a vacuum onto semiconductor wafers through an in- teracttgn between the wafer and the support material
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
NL296876A (en) * 1962-08-23
US3316130A (en) * 1963-05-07 1967-04-25 Gen Electric Epitaxial growth of semiconductor devices
DE1289829B (en) * 1963-05-09 1969-02-27 Siemens Ag Process for producing a monocrystalline semiconductor layer by deposition from a reaction gas
DE1297085B (en) * 1964-01-10 1969-06-12 Siemens Ag Process for depositing a monocrystalline semiconductor layer

Also Published As

Publication number Publication date
SE317652B (en) 1969-11-24
GB1132491A (en) 1968-11-06
NL6602149A (en) 1966-08-19
DE1287047B (en) 1969-01-16
US3425878A (en) 1969-02-04
CH444827A (en) 1967-10-15

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