GB1115939A - An improved method for producing a semiconductor radiation detector - Google Patents

An improved method for producing a semiconductor radiation detector

Info

Publication number
GB1115939A
GB1115939A GB12913/67A GB1291367A GB1115939A GB 1115939 A GB1115939 A GB 1115939A GB 12913/67 A GB12913/67 A GB 12913/67A GB 1291367 A GB1291367 A GB 1291367A GB 1115939 A GB1115939 A GB 1115939A
Authority
GB
United Kingdom
Prior art keywords
coatings
hole
semiconductor radiation
march
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12913/67A
Inventor
Michael J Higatsberger
Harald Peter Hick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oesterreichische Studiengesellschaft fuer Atomenergie GmbH
Original Assignee
Oesterreichische Studiengesellschaft fuer Atomenergie GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oesterreichische Studiengesellschaft fuer Atomenergie GmbH filed Critical Oesterreichische Studiengesellschaft fuer Atomenergie GmbH
Publication of GB1115939A publication Critical patent/GB1115939A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H01L31/1175—Li compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)

Abstract

1,115,939. Semiconductor radiation detectors. OSTERREICHISCHE STUDIENGESELLSCHAFT FUR ATOMENERGIE G.m.b.H. 20 March, 1967 [18 March, 1966], No. 12913/67. Heading H1K. A body 1 of semi-conductor material, e.g. Ge or Si, has a conductive coating 3 on its outer surface and a through hole 2 whose bounding surface carries a second conductive coating 4. The semi-conductor is doped by diffusion of impurity from one of the coatings into the body under the influence of a potential difference applied between terminals 5, 6 connected to the respective coatings. As shown the body is trapezoidal and the hole cylindrical, though both may be cylindrical. One of the coatings is of plated-on gold and the other is of or contains the dopant, lithiumwhich may be evaporated on or deposited from liquid phase, e.g. as a solution of a lithium salt or as a lithium-in-oil suspension. The device can be used as a detector of radiation from a radio-active solid, liquid or gaseous source placed in or passing through the hole 2.
GB12913/67A 1966-03-18 1967-03-20 An improved method for producing a semiconductor radiation detector Expired GB1115939A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT262566A AT261766B (en) 1966-03-18 1966-03-18 Method for manufacturing a drifted semiconductor detector

Publications (1)

Publication Number Publication Date
GB1115939A true GB1115939A (en) 1968-06-06

Family

ID=3537590

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12913/67A Expired GB1115939A (en) 1966-03-18 1967-03-20 An improved method for producing a semiconductor radiation detector

Country Status (6)

Country Link
US (1) US3546459A (en)
AT (1) AT261766B (en)
CH (1) CH457630A (en)
DE (1) DE1614317A1 (en)
FR (1) FR1514734A (en)
GB (1) GB1115939A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2118846A1 (en) * 1970-12-22 1972-08-04 Radiotechnique Compelec Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4056726A (en) * 1975-10-01 1977-11-01 Princeton Gamma-Tech, Inc. Coaxial gamma ray detector and method therefor
US4163240A (en) * 1977-03-21 1979-07-31 The Harshaw Chemical Company Sensitive silicon pin diode fast neutron dosimeter
US4214253A (en) * 1977-06-13 1980-07-22 General Electric Company Radiation detector
US9269847B2 (en) 2013-03-15 2016-02-23 Canberra Industries, Inc. Small anode germanium (SAGe) well radiation detector system and method
US10048389B1 (en) 2017-04-19 2018-08-14 Mirion Technologies (Canberra), Inc. Centroid contact radiation detector system and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1863843A (en) * 1925-01-07 1932-06-21 Union Switch & Signal Co Process of preparing metal for use in unidirectional current carrying devices
US2945955A (en) * 1955-11-12 1960-07-19 Atomic Energy Authority Uk Apparatus for detecting radioactive particle emission
US3005100A (en) * 1956-06-12 1961-10-17 Theos J Thompson Nuclear scintillation monitor
US3225198A (en) * 1961-05-16 1965-12-21 Hughes Aircraft Co Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region
GB1058753A (en) * 1962-11-02 1967-02-15 Ass Elect Ind Improvements relating to solid state devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2118846A1 (en) * 1970-12-22 1972-08-04 Radiotechnique Compelec Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material

Also Published As

Publication number Publication date
CH457630A (en) 1968-06-15
AT261766B (en) 1968-05-10
FR1514734A (en) 1968-02-23
DE1614317A1 (en) 1970-07-02
US3546459A (en) 1970-12-08

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