CH440907A - Method for the polishing removal of monocrystalline semiconductor bodies, in particular semiconductor wafers - Google Patents

Method for the polishing removal of monocrystalline semiconductor bodies, in particular semiconductor wafers

Info

Publication number
CH440907A
CH440907A CH10064A CH10064A CH440907A CH 440907 A CH440907 A CH 440907A CH 10064 A CH10064 A CH 10064A CH 10064 A CH10064 A CH 10064A CH 440907 A CH440907 A CH 440907A
Authority
CH
Switzerland
Prior art keywords
polishing removal
bodies
monocrystalline
semiconductor wafers
wafers
Prior art date
Application number
CH10064A
Other languages
German (de)
Inventor
Herbert Dr Lange
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH440907A publication Critical patent/CH440907A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • C23F3/04Heavy metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CH10064A 1963-03-28 1964-01-07 Method for the polishing removal of monocrystalline semiconductor bodies, in particular semiconductor wafers CH440907A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES84436A DE1219764B (en) 1963-03-28 1963-03-28 Process for the polishing removal of monocrystalline semiconductor bodies, in particular semiconductor wafers

Publications (1)

Publication Number Publication Date
CH440907A true CH440907A (en) 1967-07-31

Family

ID=33151854

Family Applications (1)

Application Number Title Priority Date Filing Date
CH10064A CH440907A (en) 1963-03-28 1964-01-07 Method for the polishing removal of monocrystalline semiconductor bodies, in particular semiconductor wafers

Country Status (4)

Country Link
CH (1) CH440907A (en)
DE (1) DE1219764B (en)
FR (1) FR1389877A (en)
GB (1) GB987971A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1287409B (en) * 1966-04-21 1969-01-16 Telefunken Patent Method and device for producing flat surfaces on semiconductor wafers using a pickling liquid
DE3237235C2 (en) * 1982-10-07 1986-07-10 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Process for polishing III-V semiconductor surfaces
CN112658816B (en) * 2020-12-27 2022-08-23 浙江师范大学 Abrasive flow polishing method with controllable viscosity and device thereof

Also Published As

Publication number Publication date
GB987971A (en) 1965-03-31
DE1219764B (en) 1966-06-23
FR1389877A (en) 1965-02-19

Similar Documents

Publication Publication Date Title
CH407338A (en) Method for contacting semiconductor components
CH440908A (en) Method for the polishing removal of monocrystalline semiconductor bodies, in particular semiconductor wafers
CH423728A (en) Process for producing pn junctions in silicon
CH412821A (en) Method for producing single-crystal, in particular thin, semiconducting layers
AT261675B (en) Process for the epitaxial growth of semiconductor single crystals
CH408219A (en) Process for dividing plate-shaped semiconductor bodies into bodies with a smaller area
CH391106A (en) Method for manufacturing semiconductor devices
CH401273A (en) Method of manufacturing semiconductor elements
CH505466A (en) Process for polishing semiconductor surfaces
CH420072A (en) Method for producing single-crystal semiconductor rods
AT258364B (en) Method for manufacturing semiconductor devices
CH486390A (en) Process for cleaning silicon carbide
CH401633A (en) Process for the etching of essentially single-crystal semiconductor bodies
CH440907A (en) Method for the polishing removal of monocrystalline semiconductor bodies, in particular semiconductor wafers
MY6900232A (en) A method for plating a support for a silicon wafer in the manufacture of semiconductor devices
AT262381B (en) Method for manufacturing semiconductor circuits
CH444828A (en) Method for manufacturing semiconductor components
CH420390A (en) Method for manufacturing semiconductor components from silicon carbide
CH407337A (en) Process for manufacturing semiconductor wafers
CH507590A (en) Method for manufacturing small-area semiconductor components
CH409152A (en) High performance silicon semiconductor element and method of manufacturing the same
CH401919A (en) Method for producing elongated, in particular band-shaped semiconductor bodies
CH446537A (en) Method for manufacturing semiconductor components
CH436921A (en) Process for the periodic separation of chips produced during machining
CH410196A (en) Method for manufacturing semiconductor devices