GB987971A - Process for reducing the dimensions of monocrystalline bodies of semiconductor material - Google Patents

Process for reducing the dimensions of monocrystalline bodies of semiconductor material

Info

Publication number
GB987971A
GB987971A GB1112864A GB1112864A GB987971A GB 987971 A GB987971 A GB 987971A GB 1112864 A GB1112864 A GB 1112864A GB 1112864 A GB1112864 A GB 1112864A GB 987971 A GB987971 A GB 987971A
Authority
GB
United Kingdom
Prior art keywords
agent
polishing
agents
reduced
dimensions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1112864A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB987971A publication Critical patent/GB987971A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals

Abstract

The dimensions of a monocrystalline body of semi-conductor material are reduced by treating in a polishing device in the presence of at least one mechanically active polishing agent and at least one chemically active agent, said agents being supplied and discharged at the same rate. The polishing agent is in the form of fine grains ten times smaller than those of the layer to be reduced. The chemical agent is sodium hydroxide. The bodies are rubbed against a polishing plate. The process may be carried out in stages, progressively reducing the grain size of the mechanically active agent and the concentration of the chemical agent or increasing the viscosity of one of the agents by adding a high viscosity liquid such as glycol, glycerine, paraffin oil or silcone oil.ALSO:The dimensions of a monocrystalline body of semi-conductor material are reduced by treating in a polishing device in the presence of at least one mechanically active polishing agent and at least one chemically active agent, said agents being supplied and discharged at the same rate. The polishing agent is in the form of fine grains ten times smaller than those of the layer to be reduced. The chemical agent is sodium hydroxide. The bodies are rubbed against a polishing plate. The process may be carried out in stages, progressively reducing the grain size of the mechanically active agent and the concentration of the chemical agent or increasing the viscosity of one of the agents by adding a high viscosity liquid such as glycol, glycerine, paraffin oil or silicon oil.
GB1112864A 1963-03-28 1964-03-17 Process for reducing the dimensions of monocrystalline bodies of semiconductor material Expired GB987971A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES84436A DE1219764B (en) 1963-03-28 1963-03-28 Process for the polishing removal of monocrystalline semiconductor bodies, in particular semiconductor wafers

Publications (1)

Publication Number Publication Date
GB987971A true GB987971A (en) 1965-03-31

Family

ID=33151854

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1112864A Expired GB987971A (en) 1963-03-28 1964-03-17 Process for reducing the dimensions of monocrystalline bodies of semiconductor material

Country Status (4)

Country Link
CH (1) CH440907A (en)
DE (1) DE1219764B (en)
FR (1) FR1389877A (en)
GB (1) GB987971A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112658816A (en) * 2020-12-27 2021-04-16 浙江师范大学 Abrasive flow polishing method with controllable viscosity and device thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1287409B (en) * 1966-04-21 1969-01-16 Telefunken Patent Method and device for producing flat surfaces on semiconductor wafers using a pickling liquid
DE3237235C2 (en) * 1982-10-07 1986-07-10 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Process for polishing III-V semiconductor surfaces

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112658816A (en) * 2020-12-27 2021-04-16 浙江师范大学 Abrasive flow polishing method with controllable viscosity and device thereof

Also Published As

Publication number Publication date
FR1389877A (en) 1965-02-19
CH440907A (en) 1967-07-31
DE1219764B (en) 1966-06-23

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