CH409885A - Method for the crucible-free pulling of monocrystalline semiconductor rods - Google Patents

Method for the crucible-free pulling of monocrystalline semiconductor rods

Info

Publication number
CH409885A
CH409885A CH1454161A CH1454161A CH409885A CH 409885 A CH409885 A CH 409885A CH 1454161 A CH1454161 A CH 1454161A CH 1454161 A CH1454161 A CH 1454161A CH 409885 A CH409885 A CH 409885A
Authority
CH
Switzerland
Prior art keywords
crucible
monocrystalline semiconductor
semiconductor rods
free pulling
pulling
Prior art date
Application number
CH1454161A
Other languages
German (de)
Inventor
Sussmann Erhard
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH409885A publication Critical patent/CH409885A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1454161A 1961-02-07 1961-12-14 Method for the crucible-free pulling of monocrystalline semiconductor rods CH409885A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1961S0072399 DE1259854B (en) 1961-02-07 1961-02-07 Method for crucible-free zone melting of a rod of semiconductor material held at its ends

Publications (1)

Publication Number Publication Date
CH409885A true CH409885A (en) 1966-03-31

Family

ID=7503165

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1454161A CH409885A (en) 1961-02-07 1961-12-14 Method for the crucible-free pulling of monocrystalline semiconductor rods

Country Status (5)

Country Link
CH (1) CH409885A (en)
DE (1) DE1259854B (en)
GB (1) GB931975A (en)
NL (2) NL129916C (en)
SE (1) SE316152B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6411697A (en) * 1963-10-15 1965-04-20
US3944640A (en) * 1970-09-02 1976-03-16 Arthur D. Little, Inc. Method for forming refractory fibers by laser energy
US4012213A (en) * 1973-06-14 1977-03-15 Arthur D. Little, Inc. Apparatus for forming refractory fibers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE975158C (en) * 1953-12-30 1961-09-14 Siemens Ag Method and device for crucible-free zone melting of an elongated rod-shaped body
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
DE1153908B (en) * 1958-04-22 1963-09-05 Siemens Ag Method and device for crucible-free zone melting with changing the spacing of the rod ends

Also Published As

Publication number Publication date
NL274321A (en)
GB931975A (en) 1963-07-24
DE1259854B (en) 1968-02-01
SE316152B (en) 1969-10-20
NL129916C (en)

Similar Documents

Publication Publication Date Title
CH376584A (en) Method for producing single-crystal semiconductor rods
CH392077A (en) Process for the continuous pulling of dendritic crystals
CH409887A (en) Method for manufacturing semiconductor devices from monocrystalline semiconductor elements
AT261675B (en) Process for the epitaxial growth of semiconductor single crystals
CH401273A (en) Method of manufacturing semiconductor elements
MY6900306A (en) Method and apparatus for growing semiconductor crystals
CH373903A (en) Process for crucible-free zone pulling of semiconductor material
AT249116B (en) Process for pulling single crystal semiconductor material
CH420072A (en) Method for producing single-crystal semiconductor rods
CH389249A (en) Method for crucible-free zone melting of semiconductor material
CH386116A (en) Process for crucible-free zone melting of silicon semiconductor rods
CH401633A (en) Process for the etching of essentially single-crystal semiconductor bodies
AT255485B (en) Method of pulling flat dendrites
CH449590A (en) Process for the preparation of III-V compounds in crystalline form
CH409885A (en) Method for the crucible-free pulling of monocrystalline semiconductor rods
CH367898A (en) Method of manufacturing semiconductor devices
CH425736A (en) Method for producing single-crystal semiconductor rods
CH386702A (en) Process for pulling crystalline semiconductor rods from the melt
CH388636A (en) Device for crucible-free zone melting of semiconductor rods
CH401634A (en) Process for the shaping processing of semiconductor crystals
CH413112A (en) Method of manufacturing semiconductor devices
CH392076A (en) Method and device for producing high purity gallium
CH406160A (en) Process for pulling semiconductor crystals from melts
CH442248A (en) Process for the production of doped semiconductor single crystals
CH410016A (en) Method for securing the blades of turbomachines