CH389249A - Method for crucible-free zone melting of semiconductor material - Google Patents

Method for crucible-free zone melting of semiconductor material

Info

Publication number
CH389249A
CH389249A CH774460A CH774460A CH389249A CH 389249 A CH389249 A CH 389249A CH 774460 A CH774460 A CH 774460A CH 774460 A CH774460 A CH 774460A CH 389249 A CH389249 A CH 389249A
Authority
CH
Switzerland
Prior art keywords
crucible
semiconductor material
free zone
zone melting
melting
Prior art date
Application number
CH774460A
Other languages
German (de)
Inventor
Wolfgang Dr Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH389249A publication Critical patent/CH389249A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/06—Control, e.g. of temperature, of power
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
CH774460A 1959-08-17 1960-07-07 Method for crucible-free zone melting of semiconductor material CH389249A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES64464A DE1215109B (en) 1959-08-17 1959-08-17 Method for crucible-free zone melting of semiconductor material
DES66492A DE1277813B (en) 1959-08-17 1959-12-31 Method for crucible-free zone melting of semiconductor material

Publications (1)

Publication Number Publication Date
CH389249A true CH389249A (en) 1965-03-15

Family

ID=25995811

Family Applications (1)

Application Number Title Priority Date Filing Date
CH774460A CH389249A (en) 1959-08-17 1960-07-07 Method for crucible-free zone melting of semiconductor material

Country Status (6)

Country Link
US (1) US3265470A (en)
BE (1) BE594105A (en)
CH (1) CH389249A (en)
DE (2) DE1215109B (en)
GB (1) GB899688A (en)
NL (2) NL252591A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3321299A (en) * 1964-10-13 1967-05-23 Monsanto Co Apparatus and process for preparing semiconductor rods
DK116145B (en) * 1965-07-09 1969-12-15 Siemens Ag Plant for inductive heating of semiconductor material.
NL6512921A (en) * 1965-10-06 1967-04-07
US3446602A (en) * 1965-11-13 1969-05-27 Nippon Electric Co Flame fusion crystal growing employing vertically displaceable pedestal responsive to temperature
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
DE2220519C3 (en) * 1972-04-26 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Process for crucible-free zone melting of semiconductor rods
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
DK142586B (en) * 1977-07-07 1980-11-24 Topsil As Apparatus for zone melting of a semiconductor rod.
US4857689A (en) * 1988-03-23 1989-08-15 High Temperature Engineering Corporation Rapid thermal furnace for semiconductor processing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2470443A (en) * 1944-07-21 1949-05-17 Mittelmann Eugene Means for and method of continuously matching and controlling power for high-frequency heating of reactive loads
US2508321A (en) * 1945-09-05 1950-05-16 Raymond M Wilmotte Method and means of controlling electronic heating
US2691732A (en) * 1948-12-07 1954-10-12 Westinghouse Electric Corp Radio frequency generator
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2868902A (en) * 1958-03-19 1959-01-13 Prec Metalsmiths Inc Induction heater control
DE1153908B (en) * 1958-04-22 1963-09-05 Siemens Ag Method and device for crucible-free zone melting with changing the spacing of the rod ends
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil

Also Published As

Publication number Publication date
DE1277813B (en) 1968-09-19
US3265470A (en) 1966-08-09
DE1215109B (en) 1966-04-28
BE594105A (en)
NL135666C (en)
NL252591A (en)
GB899688A (en) 1962-06-27

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