CH391305A - Method for crucible-free zone melting of semiconductor material - Google Patents
Method for crucible-free zone melting of semiconductor materialInfo
- Publication number
- CH391305A CH391305A CH287361A CH287361A CH391305A CH 391305 A CH391305 A CH 391305A CH 287361 A CH287361 A CH 287361A CH 287361 A CH287361 A CH 287361A CH 391305 A CH391305 A CH 391305A
- Authority
- CH
- Switzerland
- Prior art keywords
- crucible
- semiconductor material
- free zone
- zone melting
- melting
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES68896A DE1207341B (en) | 1960-06-11 | 1960-06-11 | Process for crucible-free zone melting of germanium or silicon rods |
DES71088A DE1209102B (en) | 1960-06-11 | 1960-11-02 | Process for crucible-free zone melting of germanium or silicon rods |
Publications (1)
Publication Number | Publication Date |
---|---|
CH391305A true CH391305A (en) | 1965-04-30 |
Family
ID=25996115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH287361A CH391305A (en) | 1960-06-11 | 1961-03-09 | Method for crucible-free zone melting of semiconductor material |
Country Status (5)
Country | Link |
---|---|
US (1) | US3223493A (en) |
BE (1) | BE604423A (en) |
CH (1) | CH391305A (en) |
DE (2) | DE1207341B (en) |
GB (1) | GB946064A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660062A (en) * | 1968-02-29 | 1972-05-02 | Siemens Ag | Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE510303A (en) * | 1951-11-16 | |||
BE548227A (en) * | 1955-07-22 |
-
1960
- 1960-06-11 DE DES68896A patent/DE1207341B/en active Pending
- 1960-11-02 DE DES71088A patent/DE1209102B/en active Pending
-
1961
- 1961-03-09 CH CH287361A patent/CH391305A/en unknown
- 1961-05-31 BE BE604423A patent/BE604423A/en unknown
- 1961-06-09 US US115974A patent/US3223493A/en not_active Expired - Lifetime
- 1961-06-09 GB GB21029/61A patent/GB946064A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB946064A (en) | 1964-01-08 |
DE1209102B (en) | 1966-01-20 |
DE1207341B (en) | 1965-12-23 |
US3223493A (en) | 1965-12-14 |
BE604423A (en) | 1961-11-30 |
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