CH416558A - Device for crucible-free zone melting of semiconductor material - Google Patents

Device for crucible-free zone melting of semiconductor material

Info

Publication number
CH416558A
CH416558A CH1350263A CH1350263A CH416558A CH 416558 A CH416558 A CH 416558A CH 1350263 A CH1350263 A CH 1350263A CH 1350263 A CH1350263 A CH 1350263A CH 416558 A CH416558 A CH 416558A
Authority
CH
Switzerland
Prior art keywords
crucible
semiconductor material
free zone
zone melting
melting
Prior art date
Application number
CH1350263A
Other languages
German (de)
Inventor
Wolfgang Dr Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH416558A publication Critical patent/CH416558A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
CH1350263A 1963-03-29 1963-11-04 Device for crucible-free zone melting of semiconductor material CH416558A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES84442A DE1208292B (en) 1963-03-29 1963-03-29 Device for crucible-free zone melting of semiconductor material
DES91638A DE1230763B (en) 1963-03-29 1964-06-20 Device for crucible-free zone melting

Publications (1)

Publication Number Publication Date
CH416558A true CH416558A (en) 1966-07-15

Family

ID=25997180

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1350263A CH416558A (en) 1963-03-29 1963-11-04 Device for crucible-free zone melting of semiconductor material

Country Status (6)

Country Link
US (1) US3271115A (en)
BE (2) BE645736A (en)
CH (1) CH416558A (en)
DE (2) DE1208292B (en)
FR (2) FR1431669A (en)
GB (2) GB986748A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1275996B (en) * 1965-07-10 1968-08-29 Siemens Ag Device for crucible-free zone melting
US3432753A (en) * 1966-09-30 1969-03-11 Gen Electric Method of analyzing materials to determine the impurity content thereof
DE1519908A1 (en) * 1966-12-30 1970-07-02 Siemens Ag Device for producing a crystalline rod by zone melting without a crucible
DE1960088C3 (en) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible-free zone melting of a crystalline rod
US4140570A (en) * 1973-11-19 1979-02-20 Texas Instruments Incorporated Method of growing single crystal silicon by the Czochralski method which eliminates the need for post growth annealing for resistivity stabilization
US3848107A (en) * 1973-12-26 1974-11-12 Park Ohio Industries Inc Inductor for heating elongated metal workpieces
DE2538854B2 (en) * 1975-09-01 1979-02-15 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Single-turn induction heating coil for crucible-free zone melting
US4501943A (en) * 1983-09-19 1985-02-26 Gnb Batteries Inc. Apparatus and method for fusing battery terminals with improved induction heating power control
EP0292920B1 (en) * 1987-05-25 1992-07-29 Shin-Etsu Handotai Company Limited Rf induction heating apparatus
EP0641146B1 (en) * 1993-08-26 1999-10-06 Inductotherm Corp. Magnetic suspension melting apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2419116A (en) * 1944-04-20 1947-04-15 Westinghouse Electric Corp Apparatus for high-frequency induction heating of strips
US2708704A (en) * 1952-04-23 1955-05-17 Lindberg Eng Co Electric heating coil structure
DE1062847B (en) * 1955-08-04 1959-08-06 Friedrich Kocks Dr Ing Inductor for heating the edges of flat sheets or strips
US2935386A (en) * 1956-01-03 1960-05-03 Clevite Corp Method of producing small semiconductor silicon crystals
DE1045011B (en) * 1956-03-15 1958-11-27 Asea Ab Single-phase cross-field furnace for inductive heating of workpieces
NL126240C (en) * 1958-02-19
US2990259A (en) * 1959-09-03 1961-06-27 Paul L Moody Syringe-type single-crystal furnace
US3101400A (en) * 1961-02-23 1963-08-20 Induction Heating Corp Hardening coil and method of heat treatment of toothed metal strips

Also Published As

Publication number Publication date
GB986748A (en) 1965-03-24
FR88198E (en) 1966-12-23
GB1035090A (en) 1966-07-06
DE1230763B (en) 1966-12-22
BE665626A (en) 1965-12-20
BE645736A (en) 1964-09-28
DE1208292B (en) 1966-01-05
US3271115A (en) 1966-09-06
FR1431669A (en) 1966-03-18

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