CH420069A - Device for crucible-free zone melting of semiconductor material - Google Patents

Device for crucible-free zone melting of semiconductor material

Info

Publication number
CH420069A
CH420069A CH1043163A CH1043163A CH420069A CH 420069 A CH420069 A CH 420069A CH 1043163 A CH1043163 A CH 1043163A CH 1043163 A CH1043163 A CH 1043163A CH 420069 A CH420069 A CH 420069A
Authority
CH
Switzerland
Prior art keywords
crucible
semiconductor material
free zone
zone melting
melting
Prior art date
Application number
CH1043163A
Other languages
German (de)
Inventor
Wolfgang Dr Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH420069A publication Critical patent/CH420069A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH1043163A 1962-12-24 1963-08-23 Device for crucible-free zone melting of semiconductor material CH420069A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES83049A DE1188043B (en) 1962-12-24 1962-12-24 Device for crucible-free zone melting of semiconductor material

Publications (1)

Publication Number Publication Date
CH420069A true CH420069A (en) 1966-09-15

Family

ID=7510769

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1043163A CH420069A (en) 1962-12-24 1963-08-23 Device for crucible-free zone melting of semiconductor material

Country Status (4)

Country Link
BE (1) BE641733A (en)
CH (1) CH420069A (en)
DE (1) DE1188043B (en)
GB (1) GB1029805A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1802524B1 (en) * 1968-10-11 1970-06-04 Siemens Ag Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE3107260A1 (en) * 1981-02-26 1982-09-09 Siemens AG, 1000 Berlin und 8000 München Process and appliance for depositing semiconductor material, especially silicon

Also Published As

Publication number Publication date
GB1029805A (en) 1966-05-18
DE1188043B (en) 1965-03-04
BE641733A (en) 1964-06-24

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