GB1029805A - A process in which semi-conductor material is melted and resolidified in the form of a rod and apparatus for carrying out such a process - Google Patents

A process in which semi-conductor material is melted and resolidified in the form of a rod and apparatus for carrying out such a process

Info

Publication number
GB1029805A
GB1029805A GB4610363A GB4610363A GB1029805A GB 1029805 A GB1029805 A GB 1029805A GB 4610363 A GB4610363 A GB 4610363A GB 4610363 A GB4610363 A GB 4610363A GB 1029805 A GB1029805 A GB 1029805A
Authority
GB
United Kingdom
Prior art keywords
shield
rod
zone
shields
melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4610363A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1029805A publication Critical patent/GB1029805A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,029,805. Zone-melting. SIEMENSSCHUCKERTWERKE AG. Nov. 21,1963 [Dec. 24, 1962], No. 46103/63. Heading B1S. In a process of zone-melting or crystal pulling, the molten zone is surrounded by inner and outer shields,the inner shield being of heat transmitting material and the outer shield being of heat reflecting material. The inner shield, which may be of molybdenum, tungsten, tantallum, or graphite, is roughened on the inside by sand blasting. An inner metal shield may be coated with carbon black on the outside. The outer shield may be of silver or have a silver coating. Using induction heating, the shields are in the form of incompletely closed rings to prevent formation of induction currents. As shown, a molten zone 5 is formed in a rod 4 held between holders 7 and 8 in an evacuated vessel 2 having a viewing window 15, by means of an induction coil 6 carried by a rod 14. Also carried by rod 14 are inner and outer shields 17 and 16 separated by distance pieces of mica or porcelain, outer shield 16 being cooled by water coils 18.
GB4610363A 1962-12-24 1963-11-21 A process in which semi-conductor material is melted and resolidified in the form of a rod and apparatus for carrying out such a process Expired GB1029805A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES83049A DE1188043B (en) 1962-12-24 1962-12-24 Device for crucible-free zone melting of semiconductor material

Publications (1)

Publication Number Publication Date
GB1029805A true GB1029805A (en) 1966-05-18

Family

ID=7510769

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4610363A Expired GB1029805A (en) 1962-12-24 1963-11-21 A process in which semi-conductor material is melted and resolidified in the form of a rod and apparatus for carrying out such a process

Country Status (4)

Country Link
BE (1) BE641733A (en)
CH (1) CH420069A (en)
DE (1) DE1188043B (en)
GB (1) GB1029805A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1802524B1 (en) * 1968-10-11 1970-06-04 Siemens Ag Device for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
DE3107260A1 (en) * 1981-02-26 1982-09-09 Siemens AG, 1000 Berlin und 8000 München Process and appliance for depositing semiconductor material, especially silicon

Also Published As

Publication number Publication date
CH420069A (en) 1966-09-15
DE1188043B (en) 1965-03-04
BE641733A (en) 1964-06-24

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