DK124175B - Method for drawing a crystalline body from a molten material heated at least to the melting temperature and apparatus for carrying out the method. - Google Patents

Method for drawing a crystalline body from a molten material heated at least to the melting temperature and apparatus for carrying out the method.

Info

Publication number
DK124175B
DK124175B DK486370AA DK486370A DK124175B DK 124175 B DK124175 B DK 124175B DK 486370A A DK486370A A DK 486370AA DK 486370 A DK486370 A DK 486370A DK 124175 B DK124175 B DK 124175B
Authority
DK
Denmark
Prior art keywords
carrying
melting temperature
molten material
material heated
crystalline body
Prior art date
Application number
DK486370AA
Other languages
Danish (da)
Inventor
T Rummel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK124175B publication Critical patent/DK124175B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK486370AA 1969-09-24 1970-09-23 Method for drawing a crystalline body from a molten material heated at least to the melting temperature and apparatus for carrying out the method. DK124175B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691948194 DE1948194A1 (en) 1969-09-24 1969-09-24 Process for drawing a crystalline body from a melt material heated to at least the melting temperature and apparatus for carrying out this process

Publications (1)

Publication Number Publication Date
DK124175B true DK124175B (en) 1972-09-25

Family

ID=5746317

Family Applications (1)

Application Number Title Priority Date Filing Date
DK486370AA DK124175B (en) 1969-09-24 1970-09-23 Method for drawing a crystalline body from a molten material heated at least to the melting temperature and apparatus for carrying out the method.

Country Status (10)

Country Link
US (1) US3759670A (en)
AT (1) AT309390B (en)
BE (1) BE756590A (en)
CH (1) CH534541A (en)
DE (1) DE1948194A1 (en)
DK (1) DK124175B (en)
FR (1) FR2062437A5 (en)
GB (1) GB1284068A (en)
NL (1) NL7010531A (en)
SE (1) SE368663B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049384A (en) * 1975-04-14 1977-09-20 Arthur D. Little, Inc. Cold crucible system
US4224100A (en) * 1978-06-16 1980-09-23 Litton Systems, Inc. Method and apparatus for making crystals
US4259278A (en) * 1979-07-09 1981-03-31 Ultra Carbon Corporation Method of reshaping warped graphite enclosures and the like
DE3316547C2 (en) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Cold crucible for melting non-metallic inorganic compounds
AT385059B (en) * 1983-05-31 1988-02-10 Avl Verbrennungskraft Messtech METHOD FOR GROWING CRYSTALS, ESPECIALLY SINGLE CRYSTALS, AND DEVICE FOR CARRYING OUT THE METHOD
CA1309755C (en) * 1987-03-30 1992-11-03 Hiroyoshi Nozaki Method of and apparatus for baking coating layer
JPH04331792A (en) * 1991-04-30 1992-11-19 Osaka Titanium Co Ltd Production of silicon single crystal
US5885344A (en) * 1997-08-08 1999-03-23 Memc Electronic Materials, Inc. Non-dash neck method for single crystal silicon growth

Also Published As

Publication number Publication date
DE1948194A1 (en) 1971-04-01
BE756590A (en) 1971-03-24
SE368663B (en) 1974-07-15
FR2062437A5 (en) 1971-06-25
NL7010531A (en) 1971-03-26
GB1284068A (en) 1972-08-02
AT309390B (en) 1973-08-10
US3759670A (en) 1973-09-18
CH534541A (en) 1973-03-15

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