DK123280B - Apparatus for crucible-free zone melting of a crystalline rod. - Google Patents

Apparatus for crucible-free zone melting of a crystalline rod.

Info

Publication number
DK123280B
DK123280B DK608970AA DK608970A DK123280B DK 123280 B DK123280 B DK 123280B DK 608970A A DK608970A A DK 608970AA DK 608970 A DK608970 A DK 608970A DK 123280 B DK123280 B DK 123280B
Authority
DK
Denmark
Prior art keywords
crucible
free zone
zone melting
crystalline rod
crystalline
Prior art date
Application number
DK608970AA
Other languages
Danish (da)
Inventor
O Schmidt
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK123280B publication Critical patent/DK123280B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK608970AA 1969-11-29 1970-11-27 Apparatus for crucible-free zone melting of a crystalline rod. DK123280B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1960088A DE1960088C3 (en) 1969-11-29 1969-11-29 Device for crucible-free zone melting of a crystalline rod

Publications (1)

Publication Number Publication Date
DK123280B true DK123280B (en) 1972-06-05

Family

ID=5752523

Family Applications (1)

Application Number Title Priority Date Filing Date
DK608970AA DK123280B (en) 1969-11-29 1970-11-27 Apparatus for crucible-free zone melting of a crystalline rod.

Country Status (6)

Country Link
US (1) US3716341A (en)
JP (1) JPS4824601B1 (en)
DE (1) DE1960088C3 (en)
DK (1) DK123280B (en)
FR (1) FR2072242A5 (en)
GB (1) GB1284008A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3520067A1 (en) * 1985-06-04 1986-12-04 Siemens AG, 1000 Berlin und 8000 München Method for producing strip-shaped silicon crystals employing a horizontal pulling direction
KR20040044146A (en) * 2002-11-19 2004-05-27 가부시끼가이샤 도꾸야마 Single crystal pulling apparatus for metal fluoride

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1092576B (en) * 1957-11-15 1960-11-10 Siemens Ag Power supply for the movable heating coil of a crucible-free zone pulling device inside a vessel
US3117859A (en) * 1957-12-30 1964-01-14 Westinghouse Electric Corp Zone refining process
NL126240C (en) * 1958-02-19
DE1208292B (en) * 1963-03-29 1966-01-05 Siemens Ag Device for crucible-free zone melting of semiconductor material
US3260573A (en) * 1963-06-26 1966-07-12 Siemens Ag Zone melting gallium in a recycling arsenic atmosphere
DE1218404B (en) * 1964-02-01 1966-06-08 Siemens Ag Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
FR1482659A (en) * 1965-06-10 1967-05-26 Siemens Ag Device for melting zone without crucible
DE1544301A1 (en) * 1966-09-28 1970-05-27 Siemens Ag Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
US3607109A (en) * 1968-01-09 1971-09-21 Emil R Capita Method and means of producing a large diameter single-crystal rod from a polycrystal bar

Also Published As

Publication number Publication date
FR2072242A5 (en) 1971-09-24
GB1284008A (en) 1972-08-02
DE1960088A1 (en) 1971-06-03
US3716341A (en) 1973-02-13
DE1960088B2 (en) 1973-12-20
DE1960088C3 (en) 1974-07-25
JPS4824601B1 (en) 1973-07-23

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