GB1150691A - Method of Growing Single Crystals - Google Patents
Method of Growing Single CrystalsInfo
- Publication number
- GB1150691A GB1150691A GB16502/68A GB1650268A GB1150691A GB 1150691 A GB1150691 A GB 1150691A GB 16502/68 A GB16502/68 A GB 16502/68A GB 1650268 A GB1650268 A GB 1650268A GB 1150691 A GB1150691 A GB 1150691A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- seed
- zone
- molten zone
- april
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000006698 induction Effects 0.000 abstract 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1,150,691. Zone - melting. CORNING GLASS WORKS. 5 April, 1968 [6 April, 1967], No. 16502/68. Heading B1S. In the passage of a molten zone through a polycrystalline trod from a seed, the rod and seed are rotated in opposite directions about their longitudinal axes which are arranged horizontally. Induction, flame (Fig. 7), electric resistance, electron beam, or radiation heating may be employed. Using induction heating, a susceptor ring 28 (Fig. 8) surrounding the rod 10 at a point remote from the point of fusion may be used to effect preheating, a hot non-molten zone then being passed to the junction of rod 10 and seed 14 and increased in intensity to form the molten zone. The rod and seed may be pulled apart after formation of the molten zone to form a neck (Fig. 6). The rate of rotation of rod and seed may each be 50-1,000 rpm. The molten zone may be passed at 0.1-20 mm/min. The ratio of zone length/diameter may be l:0.5-4. The material of the rod may be Fe, Cu, Al, Ni, Pt, Ge, Si, GaP, or Al 2 O 3 .
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62893267A | 1967-04-06 | 1967-04-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1150691A true GB1150691A (en) | 1969-04-30 |
Family
ID=24520903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB16502/68A Expired GB1150691A (en) | 1967-04-06 | 1968-04-05 | Method of Growing Single Crystals |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3494745A (en) |
| DE (1) | DE1719500A1 (en) |
| FR (1) | FR1565013A (en) |
| GB (1) | GB1150691A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3607115A (en) * | 1969-10-29 | 1971-09-21 | Gen Motors Corp | Crystal pulling from molten melts including solute introduction means below the seed-melt interface |
| US4289571A (en) * | 1979-06-25 | 1981-09-15 | Energy Materials Corporation | Method and apparatus for producing crystalline ribbons |
| US4351397A (en) * | 1980-03-10 | 1982-09-28 | International Harvester Co. | Vibrating ripper |
| US7972703B2 (en) * | 2005-03-03 | 2011-07-05 | Ferrotec (Usa) Corporation | Baffle wafers and randomly oriented polycrystalline silicon used therefor |
| DE102005032594A1 (en) * | 2005-07-11 | 2007-01-18 | Forschungszentrum Jülich GmbH | Method for producing a bead single crystal |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1243611A (en) * | 1958-12-16 | 1960-10-14 | Ckd Modrany Narodni Podnik | Method for manufacturing a silicon single crystal with predetermined conductivity type and electrical parameters |
| GB933176A (en) * | 1961-06-19 | 1963-08-08 | Ass Elect Ind | Improvements relating to the growth of single crystals |
| DE1296132B (en) * | 1965-03-19 | 1969-05-29 | Siemens Ag | Process for the production of semiconductor rods by drawing from the melt |
-
1967
- 1967-04-06 US US628932A patent/US3494745A/en not_active Expired - Lifetime
-
1968
- 1968-03-19 DE DE19681719500 patent/DE1719500A1/en active Pending
- 1968-04-04 FR FR1565013D patent/FR1565013A/fr not_active Expired
- 1968-04-05 GB GB16502/68A patent/GB1150691A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1719500A1 (en) | 1971-11-11 |
| US3494745A (en) | 1970-02-10 |
| FR1565013A (en) | 1969-04-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |