GB1191166A - Zone Melting - Google Patents

Zone Melting

Info

Publication number
GB1191166A
GB1191166A GB43362/67A GB4336267A GB1191166A GB 1191166 A GB1191166 A GB 1191166A GB 43362/67 A GB43362/67 A GB 43362/67A GB 4336267 A GB4336267 A GB 4336267A GB 1191166 A GB1191166 A GB 1191166A
Authority
GB
United Kingdom
Prior art keywords
zone
molten zone
annular
rod
complete
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43362/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1191166A publication Critical patent/GB1191166A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Abstract

1,191,166. Floating zone-melting. SIEMENS A.G. 22 Sept., 1967 [24 Sept., 1966], No. 43362/67. Heading BIS. A rod of silicon is zone-melted by the successive passage of an annular and a complete molten zone. The annular molten zone has a depth of one-fifth to two-thirds of the radius of the rod. The two molten zones may be passed separately in the same or opposite directions or simultaneously in the same direction at a distance apart of 4-7 cm. The complete molten zone may pass upwards or downwards. As shown, an incandescent zone is passed from a carbon element 11 to a seed 13, whereafter an annular molten zone 17 followed by a complete molten zone 18 is passed from the seed in the opposite direction by means of surrounding induction coils 16 and 15. In a modification, coil 15 is dispensed with and the power to coil 16 is increased after the complete passage of the annular molten zone to form the complete molten zone. In another embodiment (Figs. 2 and 3), the annular molten zone is formed by rotating the rod and heating by means of an induction loop situated at one side of the rod.
GB43362/67A 1966-09-24 1967-09-22 Zone Melting Expired GB1191166A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0106092 1966-09-24

Publications (1)

Publication Number Publication Date
GB1191166A true GB1191166A (en) 1970-05-06

Family

ID=7527124

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43362/67A Expired GB1191166A (en) 1966-09-24 1967-09-22 Zone Melting

Country Status (6)

Country Link
US (1) US3585008A (en)
BE (1) BE704005A (en)
DE (1) DE1519903A1 (en)
DK (1) DK136805B (en)
GB (1) GB1191166A (en)
NL (1) NL6710709A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1542868A (en) * 1975-11-14 1979-03-28 Siemens Ag Production of phosphorus-doped monocrystalline silicon rods
US5207863A (en) * 1990-04-06 1993-05-04 Canon Kabushiki Kaisha Crystal growth method and crystalline article obtained by said method

Also Published As

Publication number Publication date
BE704005A (en) 1968-03-18
DK136805B (en) 1977-11-28
DE1519903A1 (en) 1970-02-12
US3585008A (en) 1971-06-15
NL6710709A (en) 1968-03-25
DK136805C (en) 1978-05-16

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees