GB1246262A - Improvements relating to zone-melting - Google Patents

Improvements relating to zone-melting

Info

Publication number
GB1246262A
GB1246262A GB52181/67A GB5218167A GB1246262A GB 1246262 A GB1246262 A GB 1246262A GB 52181/67 A GB52181/67 A GB 52181/67A GB 5218167 A GB5218167 A GB 5218167A GB 1246262 A GB1246262 A GB 1246262A
Authority
GB
United Kingdom
Prior art keywords
cylinder
induction
melting
zone
nov
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52181/67A
Inventor
Poul Elgaard Knudsen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB52181/67A priority Critical patent/GB1246262A/en
Priority to US775309A priority patent/US3644097A/en
Priority to DK556368AA priority patent/DK124861B/en
Priority to DE19681809242 priority patent/DE1809242A1/en
Publication of GB1246262A publication Critical patent/GB1246262A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • General Induction Heating (AREA)

Abstract

1,246,262. Zone-melting. H. F. A. TOPSOE. 15 Nov., 1968 [16 Nov., 1967], No. 52181/67. Heading B1S. In the zone-melting of a silicon rod by induction-heating, annealing is effected by means of heat radiated from an induction-heated split cylinder surrounding the rod. As shown, the induction-heating means comprises a small coil 3 and a large coil 4; and the annealing means comprises a cylinder having a slit 9 along its whole length and slits 7 forming flaps 8 which are outwardly bent at an angle of 45‹. In a modification, the thickness of the cylinder increases from the bottom to the top or a third induction coil surrounds the cylinder. The cylinder may be of silicon or graphite.
GB52181/67A 1967-11-16 1967-11-16 Improvements relating to zone-melting Expired GB1246262A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB52181/67A GB1246262A (en) 1967-11-16 1967-11-16 Improvements relating to zone-melting
US775309A US3644097A (en) 1967-11-16 1968-11-13 Apparatus for control of heat radiation in zone melting
DK556368AA DK124861B (en) 1967-11-16 1968-11-15 A method of purifying a monocrystalline body of semiconductor material, and an apparatus for carrying out the method.
DE19681809242 DE1809242A1 (en) 1967-11-16 1968-11-15 Process for the production of monocrystalline bodies of semiconductor materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB52181/67A GB1246262A (en) 1967-11-16 1967-11-16 Improvements relating to zone-melting

Publications (1)

Publication Number Publication Date
GB1246262A true GB1246262A (en) 1971-09-15

Family

ID=10462938

Family Applications (1)

Application Number Title Priority Date Filing Date
GB52181/67A Expired GB1246262A (en) 1967-11-16 1967-11-16 Improvements relating to zone-melting

Country Status (4)

Country Link
US (1) US3644097A (en)
DE (1) DE1809242A1 (en)
DK (1) DK124861B (en)
GB (1) GB1246262A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094730A (en) * 1977-03-11 1978-06-13 The United States Of America As Represented By The Secretary Of The Air Force Method for fabrication of high minority carrier lifetime, low to moderate resistivity, single crystal silicon

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
US4285760A (en) * 1979-10-25 1981-08-25 Hughes Aircraft Company Zone purification of cylindrical ingots
FR2526449B1 (en) * 1982-05-04 1985-07-05 Commissariat Energie Atomique METHOD AND DEVICE FOR MANUFACTURING A SINGLE CRYSTAL, FREE OF ANY CONSTRAINT, OF A FERROELECTRIC COMPOUND WITH A CRYSTALLINE STRUCTURE
US4544025A (en) * 1984-01-17 1985-10-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High gradient directional solidification furnace
US5069742A (en) * 1990-02-05 1991-12-03 Bleil Carl E Method and apparatus for crystal ribbon growth

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094730A (en) * 1977-03-11 1978-06-13 The United States Of America As Represented By The Secretary Of The Air Force Method for fabrication of high minority carrier lifetime, low to moderate resistivity, single crystal silicon

Also Published As

Publication number Publication date
US3644097A (en) 1972-02-22
DK124861B (en) 1972-12-04
DE1809242A1 (en) 1969-07-24

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