DK124861B - A method of purifying a monocrystalline body of semiconductor material, and an apparatus for carrying out the method. - Google Patents

A method of purifying a monocrystalline body of semiconductor material, and an apparatus for carrying out the method.

Info

Publication number
DK124861B
DK124861B DK556368AA DK556368A DK124861B DK 124861 B DK124861 B DK 124861B DK 556368A A DK556368A A DK 556368AA DK 556368 A DK556368 A DK 556368A DK 124861 B DK124861 B DK 124861B
Authority
DK
Denmark
Prior art keywords
purifying
carrying
semiconductor material
monocrystalline body
monocrystalline
Prior art date
Application number
DK556368AA
Other languages
Danish (da)
Inventor
P Knudsen
Original Assignee
Topsoe H
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topsoe H filed Critical Topsoe H
Publication of DK124861B publication Critical patent/DK124861B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • General Induction Heating (AREA)
DK556368AA 1967-11-16 1968-11-15 A method of purifying a monocrystalline body of semiconductor material, and an apparatus for carrying out the method. DK124861B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB52181/67A GB1246262A (en) 1967-11-16 1967-11-16 Improvements relating to zone-melting

Publications (1)

Publication Number Publication Date
DK124861B true DK124861B (en) 1972-12-04

Family

ID=10462938

Family Applications (1)

Application Number Title Priority Date Filing Date
DK556368AA DK124861B (en) 1967-11-16 1968-11-15 A method of purifying a monocrystalline body of semiconductor material, and an apparatus for carrying out the method.

Country Status (4)

Country Link
US (1) US3644097A (en)
DE (1) DE1809242A1 (en)
DK (1) DK124861B (en)
GB (1) GB1246262A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
US4094730A (en) * 1977-03-11 1978-06-13 The United States Of America As Represented By The Secretary Of The Air Force Method for fabrication of high minority carrier lifetime, low to moderate resistivity, single crystal silicon
US4285760A (en) * 1979-10-25 1981-08-25 Hughes Aircraft Company Zone purification of cylindrical ingots
FR2526449B1 (en) * 1982-05-04 1985-07-05 Commissariat Energie Atomique METHOD AND DEVICE FOR MANUFACTURING A SINGLE CRYSTAL, FREE OF ANY CONSTRAINT, OF A FERROELECTRIC COMPOUND WITH A CRYSTALLINE STRUCTURE
US4544025A (en) * 1984-01-17 1985-10-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High gradient directional solidification furnace
US5069742A (en) * 1990-02-05 1991-12-03 Bleil Carl E Method and apparatus for crystal ribbon growth

Also Published As

Publication number Publication date
DE1809242A1 (en) 1969-07-24
US3644097A (en) 1972-02-22
GB1246262A (en) 1971-09-15

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