DK127040B - A method of culturing an elongated monocrystalline body and apparatus for performing the method. - Google Patents

A method of culturing an elongated monocrystalline body and apparatus for performing the method.

Info

Publication number
DK127040B
DK127040B DK247968AA DK247968A DK127040B DK 127040 B DK127040 B DK 127040B DK 247968A A DK247968A A DK 247968AA DK 247968 A DK247968 A DK 247968A DK 127040 B DK127040 B DK 127040B
Authority
DK
Denmark
Prior art keywords
culturing
monocrystalline body
elongated
elongated monocrystalline
monocrystalline
Prior art date
Application number
DK247968AA
Other languages
Danish (da)
Inventor
H Labelle
Original Assignee
Tyco Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tyco Laboratories Inc filed Critical Tyco Laboratories Inc
Publication of DK127040B publication Critical patent/DK127040B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S264/00—Plastic and nonmetallic article shaping or treating: processes
    • Y10S264/19—Inorganic fiber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK247968AA 1967-05-29 1968-05-28 A method of culturing an elongated monocrystalline body and apparatus for performing the method. DK127040B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64183767A 1967-05-29 1967-05-29

Publications (1)

Publication Number Publication Date
DK127040B true DK127040B (en) 1973-09-17

Family

ID=24574051

Family Applications (1)

Application Number Title Priority Date Filing Date
DK247968AA DK127040B (en) 1967-05-29 1968-05-28 A method of culturing an elongated monocrystalline body and apparatus for performing the method.

Country Status (12)

Country Link
US (1) US3471266A (en)
BE (1) BE715819A (en)
BR (1) BR6899425D0 (en)
CH (1) CH530818A (en)
DE (1) DE1769481C3 (en)
DK (1) DK127040B (en)
ES (1) ES354476A1 (en)
FR (1) FR1581098A (en)
GB (1) GB1195947A (en)
NL (1) NL6807578A (en)
NO (1) NO123924B (en)
SE (1) SE338558B (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3650702A (en) * 1970-04-15 1972-03-21 Gen Motors Corp Crystal growth of tetragonal germanium dioxide from a flux
US3687633A (en) * 1970-08-28 1972-08-29 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
US3765843A (en) * 1971-07-01 1973-10-16 Tyco Laboratories Inc Growth of tubular crystalline bodies
BE791024A (en) * 1971-11-08 1973-05-07 Tyco Laboratories Inc PROCESS FOR DEVELOPING CRYSTALS FROM A BATH OF A MATERIAL
US4012213A (en) * 1973-06-14 1977-03-15 Arthur D. Little, Inc. Apparatus for forming refractory fibers
US3998686A (en) * 1975-03-10 1976-12-21 Corning Glass Works Sapphire growth from the melt using porous alumina raw batch material
US4082423A (en) * 1976-08-19 1978-04-04 The United States Of America As Represented By The Secretary Of The Navy Fiber optics cable strengthening method and means
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4269652A (en) * 1978-11-06 1981-05-26 Allied Chemical Corporation Method for growing crystalline materials
US4267010A (en) * 1980-06-16 1981-05-12 Mobil Tyco Solar Energy Corporation Guidance mechanism
US5336360A (en) * 1986-08-18 1994-08-09 Clemson University Laser assisted fiber growth
US5126200A (en) * 1986-08-18 1992-06-30 E. I. Du Pont De Nemours And Company Laser assisted fiber growth
US5114528A (en) * 1990-08-07 1992-05-19 Wisconsin Alumni Research Foundation Edge-defined contact heater apparatus and method for floating zone crystal growth
US5370078A (en) * 1992-12-01 1994-12-06 Wisconsin Alumni Research Foundation Method and apparatus for crystal growth with shape and segregation control
US5778960A (en) * 1995-10-02 1998-07-14 General Electric Company Method for providing an extension on an end of an article
US5904201A (en) 1996-01-18 1999-05-18 General Electric Company Solidification of an article extension from a melt using a ceramic mold
US5673745A (en) * 1996-06-27 1997-10-07 General Electric Company Method for forming an article extension by melting of an alloy preform in a ceramic mold
US5676191A (en) * 1996-06-27 1997-10-14 General Electric Company Solidification of an article extension from a melt using an integral mandrel and ceramic mold
US5673744A (en) * 1996-06-27 1997-10-07 General Electric Company Method for forming an article extension by melting of a mandrel in a ceramic mold
US5743322A (en) * 1996-06-27 1998-04-28 General Electric Company Method for forming an article extension by casting using a ceramic mold
JP4059639B2 (en) * 2001-03-14 2008-03-12 株式会社荏原製作所 Crystal pulling device
JP4456071B2 (en) * 2003-04-23 2010-04-28 ステラケミファ株式会社 Fluoride crystal production equipment
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
CN103256861A (en) * 2005-06-10 2013-08-21 圣戈本陶瓷及塑料股份有限公司 Transparent ceramic composite
TWI472652B (en) * 2006-09-22 2015-02-11 Saint Gobain Ceramics Method of producing light emitting diodes or laser diodes
US7682452B2 (en) * 2007-04-09 2010-03-23 Sapphire Systems Inc. Apparatus and methods of growing void-free crystalline ceramic products
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2809135A (en) * 1952-07-22 1957-10-08 Sylvania Electric Prod Method of forming p-n junctions in semiconductor material and apparatus therefor
US2944875A (en) * 1953-07-13 1960-07-12 Raytheon Co Crystal-growing apparatus and methods
NL237834A (en) * 1958-04-09
NL121446C (en) * 1958-11-17
NL238924A (en) * 1959-05-05
US3212858A (en) * 1963-01-28 1965-10-19 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material

Also Published As

Publication number Publication date
ES354476A1 (en) 1969-11-01
NO123924B (en) 1972-02-07
CH530818A (en) 1972-11-30
DE1769481C3 (en) 1974-01-03
SE338558B (en) 1971-09-13
FR1581098A (en) 1969-09-12
BR6899425D0 (en) 1973-05-10
DE1769481A1 (en) 1970-12-23
US3471266A (en) 1969-10-07
DE1769481B2 (en) 1973-05-17
GB1195947A (en) 1970-06-24
BE715819A (en) 1968-11-29
NL6807578A (en) 1968-12-02

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Legal Events

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PUP Patent expired