GB1195947A - Growth of Filaments. - Google Patents

Growth of Filaments.

Info

Publication number
GB1195947A
GB1195947A GB24955/68A GB2495568A GB1195947A GB 1195947 A GB1195947 A GB 1195947A GB 24955/68 A GB24955/68 A GB 24955/68A GB 2495568 A GB2495568 A GB 2495568A GB 1195947 A GB1195947 A GB 1195947A
Authority
GB
United Kingdom
Prior art keywords
melt
tube
crucible
orifice
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24955/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tyco International Ltd
Original Assignee
Tyco Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US64183767A priority Critical
Application filed by Tyco Laboratories Inc filed Critical Tyco Laboratories Inc
Publication of GB1195947A publication Critical patent/GB1195947A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34Edge-defined film-fed crystal-growth using dies or slits
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • Y10S117/902Specified orientation, shape, crystallography, or size of seed or substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S264/00Plastic and nonmetallic article shaping or treating: processes
    • Y10S264/19Inorganic fiber

Abstract

1,195,947. Crystal-pulling. TYCO LABOIRATORIES Inc. 24 May, -1968 '[29 May, 1967], No. 24955/68. Heading BIS. A dendritic filament is pulled continuously through the orifice (non-die) at the upper end of a capillary tube from melt contained therein and supplied from a crucible containing melt within which, the lower end -of the tube is immersed. The orifice may have a diameter of 0.05-0.5 mm. Pulling may be in a vacuum or an atmosphere of argon or helium and may be at a rate of 150 mm/min. The material may be aluminium, beryllium, chromium, or magnesium oxide, α-alumina may be pulled in the direction of its c (0001) axis. The crucible may be of molybdenum or iridium. As .shown, a seed is inserted into and withdrawn from melt 72 in a capillary tube 64 having a cone-shaped upper end 54 with a narrow orifice, the melt being replenished from a crucible 46 having a cover 52 which fits around the cone-shaped end. Melt flows into the tube at its lower end fromthe main body of -melt through slits 70 in a plate 60 having a depending skirt 62. The temperature of the melt is measured by a thermocouple 58. Alternatively, the plate .may be; flush with the bottom of the crucible, the tube being provided with. an orifice above the plate (Fig. 3) or the tube being replaced by a rod having a longitud inal slot (Fig. 4 and 4A). Two or more capillary tubes may be situated in the crucible the thermocouple being ,situated in one tube and a filament being pulled from the other(s) (Fig. 5).
GB24955/68A 1967-05-29 1968-05-24 Growth of Filaments. Expired GB1195947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US64183767A true 1967-05-29 1967-05-29

Publications (1)

Publication Number Publication Date
GB1195947A true GB1195947A (en) 1970-06-24

Family

ID=24574051

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24955/68A Expired GB1195947A (en) 1967-05-29 1968-05-24 Growth of Filaments.

Country Status (12)

Country Link
US (1) US3471266A (en)
BE (1) BE715819A (en)
BR (1) BR6899425D0 (en)
CH (1) CH530818A (en)
DE (1) DE1769481C3 (en)
DK (1) DK127040B (en)
ES (1) ES354476A1 (en)
FR (1) FR1581098A (en)
GB (1) GB1195947A (en)
NL (1) NL6807578A (en)
NO (1) NO123924B (en)
SE (1) SE338558B (en)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3650702A (en) * 1970-04-15 1972-03-21 Gen Motors Corp Crystal growth of tetragonal germanium dioxide from a flux
US3687633A (en) * 1970-08-28 1972-08-29 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
US4012213A (en) * 1973-06-14 1977-03-15 Arthur D. Little, Inc. Apparatus for forming refractory fibers
US3765843A (en) * 1971-07-01 1973-10-16 Tyco Laboratories Inc Growth of tubular crystalline bodies
BE791024A (en) * 1971-11-08 1973-05-07 Tyco Laboratories Inc A method for developing crystals from a bath of a material
US3998686A (en) * 1975-03-10 1976-12-21 Corning Glass Works Sapphire growth from the melt using porous alumina raw batch material
US4082423A (en) * 1976-08-19 1978-04-04 The United States Of America As Represented By The Secretary Of The Navy Fiber optics cable strengthening method and means
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
US4269652A (en) * 1978-11-06 1981-05-26 Allied Chemical Corporation Method for growing crystalline materials
US4267010A (en) * 1980-06-16 1981-05-12 Mobil Tyco Solar Energy Corporation Guidance mechanism
US5336360A (en) * 1986-08-18 1994-08-09 Clemson University Laser assisted fiber growth
US5126200A (en) * 1986-08-18 1992-06-30 E. I. Du Pont De Nemours And Company Laser assisted fiber growth
US5114528A (en) * 1990-08-07 1992-05-19 Wisconsin Alumni Research Foundation Edge-defined contact heater apparatus and method for floating zone crystal growth
US5370078A (en) * 1992-12-01 1994-12-06 Wisconsin Alumni Research Foundation Method and apparatus for crystal growth with shape and segregation control
US5778960A (en) * 1995-10-02 1998-07-14 General Electric Company Method for providing an extension on an end of an article
US5904201A (en) * 1996-01-18 1999-05-18 General Electric Company Solidification of an article extension from a melt using a ceramic mold
US5676191A (en) * 1996-06-27 1997-10-14 General Electric Company Solidification of an article extension from a melt using an integral mandrel and ceramic mold
US5673745A (en) * 1996-06-27 1997-10-07 General Electric Company Method for forming an article extension by melting of an alloy preform in a ceramic mold
US5743322A (en) * 1996-06-27 1998-04-28 General Electric Company Method for forming an article extension by casting using a ceramic mold
US5673744A (en) * 1996-06-27 1997-10-07 General Electric Company Method for forming an article extension by melting of a mandrel in a ceramic mold
JP4059639B2 (en) * 2001-03-14 2008-03-12 株式会社荏原製作所 Crystal pulling device
US20070056508A1 (en) * 2003-04-23 2007-03-15 Tsuguo Fukuda Apparatus for producing fluoride crystal
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
AU2006257867B2 (en) * 2005-06-10 2010-04-22 Saint-Gobain Ceramics & Plastics, Inc. Transparent ceramic composite
KR101498520B1 (en) * 2006-09-22 2015-03-04 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 C-plane sapphire apparatus
US7682452B2 (en) * 2007-04-09 2010-03-23 Sapphire Systems Inc. Apparatus and methods of growing void-free crystalline ceramic products
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2809135A (en) * 1952-07-22 1957-10-08 Sylvania Electric Prod Method of forming p-n junctions in semiconductor material and apparatus therefor
US2944875A (en) * 1953-07-13 1960-07-12 Raytheon Co Crystal-growing apparatus and methods
NL237834A (en) * 1958-04-09
NL244873A (en) * 1958-11-17
NL238924A (en) * 1959-05-05
US3212858A (en) * 1963-01-28 1965-10-19 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material

Also Published As

Publication number Publication date
NL6807578A (en) 1968-12-02
US3471266A (en) 1969-10-07
DE1769481C3 (en) 1974-01-03
FR1581098A (en) 1969-09-12
DE1769481B2 (en) 1973-05-17
SE338558B (en) 1971-09-13
DK127040B (en) 1973-09-17
ES354476A1 (en) 1969-11-01
BR6899425D0 (en) 1973-05-10
DE1769481A1 (en) 1970-12-23
CH530818A (en) 1972-11-30
BE715819A (en) 1968-11-29
NO123924B (en) 1972-02-07

Similar Documents

Publication Publication Date Title
Brenner et al. Mechanism of whisker growth—III nature of growth sites
US2999737A (en) Production of highly pure single crystal semiconductor rods
Johnson et al. A high temperature ion source for isotope separators
US3650703A (en) Method and apparatus for growing inorganic filaments, ribbon from the melt
US2369506A (en) Producing filaments from molten organic compositions
Ushio et al. Comparison of temperature and work function measurements obtained with different GTA electrodes
US3764286A (en) Manufacture of elongated fused quartz member
US3265469A (en) Crystal growing apparatus
US3796552A (en) Crucible
LaBelle Jr et al. Growth of controlled profile crystals from the melt: Part I-Sapphire filaments
GB829422A (en) Method and apparatus for producing semi-conductor materials of high purity
GB959367A (en) High vacuum furnace
GB1300477A (en) An x-ray tube
HU203134B (en) Apparatus for increasing monochristals of potically transvisible metal compound of high melting point
US5009863A (en) Apparatus for manufacturing silicon single crystals
Kirshenbaum et al. The density of liquid aluminium oxide
US3658979A (en) Method for forming fibers and filaments directly from melts of low viscosities
US3915662A (en) Method of growing mono crystalline tubular bodies from the melt
US3011870A (en) Process for preparing virtually perfect alumina crystals
GB997307A (en) Improvements in the manufacture of fibres, particularly glass fibres
US3033660A (en) Method and apparatus for drawing crystals from a melt
GB1205544A (en) Method and apparatus for growing crystalline materials
US3687633A (en) Apparatus for growing crystalline bodies from the melt
US3953174A (en) Apparatus for growing crystalline bodies from the melt
CH530818A (en) A method of growing monocrystalline elongated bodies, and means for carrying out this method

Legal Events

Date Code Title Description
PS Patent sealed
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years