GB1043867A - Apparatus and process for controlling dendritic crystal growth - Google Patents
Apparatus and process for controlling dendritic crystal growthInfo
- Publication number
- GB1043867A GB1043867A GB10392/65A GB1039265A GB1043867A GB 1043867 A GB1043867 A GB 1043867A GB 10392/65 A GB10392/65 A GB 10392/65A GB 1039265 A GB1039265 A GB 1039265A GB 1043867 A GB1043867 A GB 1043867A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- melt
- temperature
- crystal growth
- dissipate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 4
- 239000000155 melt Substances 0.000 abstract 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A dendritic crystal is pulled from a supercooled melt in which the temperature decreases in the direction of crystal growth and the cross-sectional dimensions of the crystal are controlled by temporarily increasing the temperature of the melt (to reduce the thickness) and then temporarily decreasing the temperature of the melt (to increase the width). The rate of withdrawal may also be varied. The material treated may be silicon, germanium, zinc selenide or sulphide, or the antimonide, arsenide or phosphide of aluminium, indium or gallium. According to Fig. 7 (not shown), a covered crystal-pulling crucible is heated from above and at its circumference and heat is allowed to dissipate from below. According to Fig. 8 (not shown), the crucible is heated from above and below and heat is allowed to dissipate from a water-cooled gap between circumferential heaters.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US353709A US3298795A (en) | 1964-03-23 | 1964-03-23 | Process for controlling dendritic crystal growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1043867A true GB1043867A (en) | 1966-09-28 |
Family
ID=23390230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB10392/65A Expired GB1043867A (en) | 1964-03-23 | 1965-03-11 | Apparatus and process for controlling dendritic crystal growth |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3298795A (en) |
| AT (1) | AT255485B (en) |
| GB (1) | GB1043867A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3527574A (en) * | 1966-09-27 | 1970-09-08 | Tyco Laboratories Inc | Growth of sapphire filaments |
| US3798007A (en) * | 1969-12-05 | 1974-03-19 | Ibm | Method and apparatus for producing large diameter monocrystals |
| US4238274A (en) * | 1978-07-17 | 1980-12-09 | Western Electric Company, Inc. | Method for avoiding undesirable deposits in crystal growing operations |
| CA1169336A (en) * | 1980-01-07 | 1984-06-19 | Emanuel M. Sachs | String stabilized ribbon growth method and apparatus |
| JPS5777038A (en) * | 1980-10-28 | 1982-05-14 | Asahi Glass Co Ltd | Manufacture of crystallized glass from phosphate glass |
| SU1592414A1 (en) * | 1986-11-26 | 1990-09-15 | Vni Pk T I Elektrotermicheskog | Method and apparatus for growing profiled crystals of high-melting compounds |
| US4971650A (en) * | 1989-09-22 | 1990-11-20 | Westinghouse Electric Corp. | Method of inhibiting dislocation generation in silicon dendritic webs |
| AU2003284253A1 (en) * | 2002-10-18 | 2004-05-04 | Evergreen Solar, Inc. | Method and apparatus for crystal growth |
| US6814802B2 (en) * | 2002-10-30 | 2004-11-09 | Evergreen Solar, Inc. | Method and apparatus for growing multiple crystalline ribbons from a single crucible |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA650166A (en) * | 1962-10-09 | J. Smith Walter | Method for controlling the thickness of a dendrite during growth |
-
1964
- 1964-03-23 US US353709A patent/US3298795A/en not_active Expired - Lifetime
-
1965
- 1965-03-11 GB GB10392/65A patent/GB1043867A/en not_active Expired
- 1965-03-22 AT AT257865A patent/AT255485B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| US3298795A (en) | 1967-01-17 |
| AT255485B (en) | 1967-07-10 |
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