GB1060630A - Zone melting processes and apparatus - Google Patents

Zone melting processes and apparatus

Info

Publication number
GB1060630A
GB1060630A GB51023/64A GB5102364A GB1060630A GB 1060630 A GB1060630 A GB 1060630A GB 51023/64 A GB51023/64 A GB 51023/64A GB 5102364 A GB5102364 A GB 5102364A GB 1060630 A GB1060630 A GB 1060630A
Authority
GB
United Kingdom
Prior art keywords
rod
image
outside
zone
solidifying interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB51023/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of GB1060630A publication Critical patent/GB1060630A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/30Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Abstract

In the formation of a thin rod of semi-conductor material having a substantially constant diameter of less than 5 mm by the relative passage of an inductively heated molten zone 66 (Fig. 1, not shown) through a thicker rod 12 with pulling together with rotation by means 26, the distance d between the solidifying interface 68 of the molten zone and an imaginary plane a through induction coil 62 is maintained constant by control of the rate of stretching. An image of a portion of the surface of the rod about the solidifying interface is projected on to a variable resistance photoelectric cell 72 and variation of the light intensity from a particular range causes passage of a signal to motor 52 for increasing or decreasing the rate of pulling. The image may be of an inside (Fig. 2, not shown) or outside (Fig. 4, not shown) surface portion. Two photoelectric cells in series (Fig. 3, not shown), for both inside and outside portions, may be employed. The use of an image of an outside surface portion about the solidifying interface gives additional control over the diameter of the zone-melted rod.
GB51023/64A 1963-12-16 1964-12-15 Zone melting processes and apparatus Expired GB1060630A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33067163A 1963-12-16 1963-12-16

Publications (1)

Publication Number Publication Date
GB1060630A true GB1060630A (en) 1967-03-08

Family

ID=23290791

Family Applications (1)

Application Number Title Priority Date Filing Date
GB51023/64A Expired GB1060630A (en) 1963-12-16 1964-12-15 Zone melting processes and apparatus

Country Status (3)

Country Link
US (1) US3428436A (en)
DE (1) DE1282601B (en)
GB (1) GB1060630A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth
US4078897A (en) * 1975-04-11 1978-03-14 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4186173A (en) * 1975-04-11 1980-01-29 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4184907A (en) * 1977-03-17 1980-01-22 Mobil Tyco Solar Energy Corporation Control of capillary die shaped crystal growth of silicon and germanium crystals
US4185076A (en) * 1977-03-17 1980-01-22 Mobil Tyco Solar Energy Corporation Apparatus for controlled growth of silicon and germanium crystal ribbons
DK371977A (en) * 1977-08-22 1979-02-23 Topsil As METHOD AND APPLIANCE FOR REFINING SALMON MATERIAL
US4267151A (en) * 1978-06-14 1981-05-12 Mobil Tyco Solar Energy Corporation Apparatus for crystal growth control
US4317799A (en) * 1979-03-12 1982-03-02 Mobil Tyco Solar Energy Corporation Belt-roller crystal pulling mechanism

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1153908B (en) * 1958-04-22 1963-09-05 Siemens Ag Method and device for crucible-free zone melting with changing the spacing of the rod ends
NL255530A (en) * 1959-09-11
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil
NL253106A (en) * 1960-06-25
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods
US3136876A (en) * 1960-10-26 1964-06-09 Clevite Corp Indicator and control system
US3190728A (en) * 1960-10-27 1965-06-22 Ronette Piezo Electrische Ind Apparatus for melting material by means of a flame of elevated temperature
FR1340483A (en) * 1961-12-07 1963-10-18 Siemens Ag Device for performing zone melting processes on semiconductor bars

Also Published As

Publication number Publication date
DE1282601B (en) 1968-11-14
US3428436A (en) 1969-02-18

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