GB1046887A - An apparatus and a method for growing a crystalline body - Google Patents

An apparatus and a method for growing a crystalline body

Info

Publication number
GB1046887A
GB1046887A GB3888464A GB3888464A GB1046887A GB 1046887 A GB1046887 A GB 1046887A GB 3888464 A GB3888464 A GB 3888464A GB 3888464 A GB3888464 A GB 3888464A GB 1046887 A GB1046887 A GB 1046887A
Authority
GB
United Kingdom
Prior art keywords
projection
growing
crystalline body
melt
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3888464A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1046887A publication Critical patent/GB1046887A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A monocrystal 16 (Fig. 2, not shown) is pulled from a melt in an inductively heated crucible 12 provided with a tapering projection 13 having a groove 14, pulling being completed after the lowest point in the surface of the melt is below the top of the projection. The crystal 16 is rotated during pulling. The top of the projection may have a diameter of 10 mm. The crystal may be of semi-conductor material or aluminium.
GB3888464A 1963-11-16 1964-09-23 An apparatus and a method for growing a crystalline body Expired GB1046887A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1963S0088316 DE1245318B (en) 1963-11-16 1963-11-16 Apparatus for producing crystals by pulling them from the melt

Publications (1)

Publication Number Publication Date
GB1046887A true GB1046887A (en) 1966-10-26

Family

ID=7514369

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3888464A Expired GB1046887A (en) 1963-11-16 1964-09-23 An apparatus and a method for growing a crystalline body

Country Status (6)

Country Link
AT (1) AT245044B (en)
BE (1) BE655667A (en)
CH (1) CH408874A (en)
DE (1) DE1245318B (en)
GB (1) GB1046887A (en)
NL (1) NL6405361A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115233294A (en) * 2022-07-04 2022-10-25 中国原子能科学研究院 Crystal growth device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4000030A (en) * 1975-06-09 1976-12-28 International Business Machines Corporation Method for drawing a monocrystal from a melt formed about a wettable projection
US4299648A (en) * 1980-08-20 1981-11-10 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for drawing monocrystalline ribbon from a melt

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL238924A (en) * 1959-05-05

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115233294A (en) * 2022-07-04 2022-10-25 中国原子能科学研究院 Crystal growth device

Also Published As

Publication number Publication date
BE655667A (en) 1965-05-13
AT245044B (en) 1966-02-10
CH408874A (en) 1966-03-15
NL6405361A (en) 1965-05-17
DE1245318B (en) 1967-07-27

Similar Documents

Publication Publication Date Title
FR1478929A (en) Method and apparatus for correcting the dimensions of a workpiece during grinding
GB1046887A (en) An apparatus and a method for growing a crystalline body
GB908033A (en) Improvements in semiconductive wafers and methods of making the same
GB1029804A (en) A process for producing a substantially monocrystalline rod of semiconductor material
GB1059960A (en) The production of semi-conductor rods
CH380960A (en) Device for holding rod-shaped semiconductor material in devices for crucible-free zone melting
GB1043867A (en) Apparatus and process for controlling dendritic crystal growth
GB1081600A (en) A method of melting a rod of crystalline material zone-by-zone
GB1045664A (en) A process for melting a rod of polycrystalline material zone-by-zone
IL39146A (en) Method and apparatus for controlling the rate of growth of synthetic crystals
GB894739A (en) Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting
FR2347974A1 (en) Crystalline silicon strips - pulled from crucible with puller rod of specified shape and seed crystal of specified orientation
ES365930A1 (en) Crystals, in particular crystal whiskers and objects comprising such crystals
GB926497A (en) A process for producing a monocrystal from a polycrystalline rod of silicon
GB1047070A (en) A process for zone-by-zone melting a rod of material
JPS57118091A (en) Manufacturing apparatus for beltlike silicon crystal
JPS5645890A (en) Crystal growing apparatus
SU249351A1 (en) Method of obtaining monocrystals
GB1015541A (en) Improvements in or relating to methods of producing a semi-conductor dendrite
CA595771A (en) Method and device for treating materials having a high surface tension in the molten state in a crucible
CA675203A (en) Method and apparatus for growing semiconductor crystals
CA650166A (en) Method for controlling the thickness of a dendrite during growth
CA666085A (en) Method and apparatus for floating-zone melting of semiconductor rods
CA797203A (en) Apparatus and process for controlling dendritic crystal growth
CA799443A (en) Method and apparatus for crucible-free zone-melting of semiconductor material