GB1032071A - Improvements in or relating to methods and apparatus for manufacturing bodies of semiconductor material - Google Patents
Improvements in or relating to methods and apparatus for manufacturing bodies of semiconductor materialInfo
- Publication number
- GB1032071A GB1032071A GB372/64A GB37264A GB1032071A GB 1032071 A GB1032071 A GB 1032071A GB 372/64 A GB372/64 A GB 372/64A GB 37264 A GB37264 A GB 37264A GB 1032071 A GB1032071 A GB 1032071A
- Authority
- GB
- United Kingdom
- Prior art keywords
- plate
- produced
- silicon
- type silicon
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 7
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 2
- 239000011863 silicon-based powder Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000012254 powdered material Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Abstract
A plate of P-type silicon may be produced by a zone-melting method (see Division B1) from silicon powder containing boron and having a resistance of 0.01-1 ohm cm. and a grain size of less than 0.2 mm. A rectifying junction may be produced by heating the plate of P-type silicon to 1100 DEG C. and passing nitrogen containing phosphorus pentoxide over the surface of the plate at the rate of 1 l./min. for 4 hours.ALSO:A plate-like crystal is produced by forming a layer 1 (Fig. 2, not shown) of powdered material on a flat support 2 and passing a molten zone 18 of a depth less than that of the powdered layer through the material. The molten zone may be followed by a hot zone 24 in which the material is heated to a lower temperature for 3-8 minutes. The molten zone may be 0.6 mm thick and 6 mm wide; it may be produced by means of heat radiation, passage of a current through the powder, or electron bombardment (Fig. 1, not shown); and may be passed at the rate of 0.3 mm/sec. The material may be silicon, germanium, or a Group III-V compound. A plate of p-type silicon may be produced from silicon powder containing boron and having a resistance of 0.01-1 ohm. cm. and a grain size of less than 0.2 mm. A device containing a rectifying junction may be produced by heating the plate of p-type silicon to 1, 100 DEG C. and passing nitrogen containing phosphorus pentoxide over the surface of the plate at the rate of 1 1/min for 4 hrs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB372/64A GB1032071A (en) | 1964-01-03 | 1964-01-03 | Improvements in or relating to methods and apparatus for manufacturing bodies of semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB372/64A GB1032071A (en) | 1964-01-03 | 1964-01-03 | Improvements in or relating to methods and apparatus for manufacturing bodies of semiconductor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1032071A true GB1032071A (en) | 1966-06-08 |
Family
ID=9703258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB372/64A Expired GB1032071A (en) | 1964-01-03 | 1964-01-03 | Improvements in or relating to methods and apparatus for manufacturing bodies of semiconductor material |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1032071A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0056179A1 (en) * | 1981-01-12 | 1982-07-21 | Sony Corporation | Process and apparatus for converged fine line electron beam treatment of objects |
| DE3123628A1 (en) * | 1981-06-15 | 1983-01-05 | Siemens AG, 1000 Berlin und 8000 München | Device for recrystallisation of thin surface films or thin films deposited on substrates, by means of an electron-emission system |
| US4446373A (en) * | 1981-01-12 | 1984-05-01 | Sony Corporation | Process and apparatus for converged fine line electron beam treatment objects |
| US4559102A (en) * | 1983-05-09 | 1985-12-17 | Sony Corporation | Method for recrystallizing a polycrystalline, amorphous or small grain material |
| US4585512A (en) * | 1984-01-27 | 1986-04-29 | Sony Corporation | Method for making seed crystals for single-crystal semiconductor devices |
| US4592799A (en) * | 1983-05-09 | 1986-06-03 | Sony Corporation | Method of recrystallizing a polycrystalline, amorphous or small grain material |
| US4703256A (en) * | 1983-05-09 | 1987-10-27 | Sony Corporation | Faraday cups |
-
1964
- 1964-01-03 GB GB372/64A patent/GB1032071A/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0056179A1 (en) * | 1981-01-12 | 1982-07-21 | Sony Corporation | Process and apparatus for converged fine line electron beam treatment of objects |
| US4446373A (en) * | 1981-01-12 | 1984-05-01 | Sony Corporation | Process and apparatus for converged fine line electron beam treatment objects |
| DE3123628A1 (en) * | 1981-06-15 | 1983-01-05 | Siemens AG, 1000 Berlin und 8000 München | Device for recrystallisation of thin surface films or thin films deposited on substrates, by means of an electron-emission system |
| US4559102A (en) * | 1983-05-09 | 1985-12-17 | Sony Corporation | Method for recrystallizing a polycrystalline, amorphous or small grain material |
| US4592799A (en) * | 1983-05-09 | 1986-06-03 | Sony Corporation | Method of recrystallizing a polycrystalline, amorphous or small grain material |
| US4703256A (en) * | 1983-05-09 | 1987-10-27 | Sony Corporation | Faraday cups |
| US4585512A (en) * | 1984-01-27 | 1986-04-29 | Sony Corporation | Method for making seed crystals for single-crystal semiconductor devices |
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