GB1323025A - Impurity diffusion process employing wafers made of desired impurity as impurity sources - Google Patents

Impurity diffusion process employing wafers made of desired impurity as impurity sources

Info

Publication number
GB1323025A
GB1323025A GB2817571A GB2817571A GB1323025A GB 1323025 A GB1323025 A GB 1323025A GB 2817571 A GB2817571 A GB 2817571A GB 2817571 A GB2817571 A GB 2817571A GB 1323025 A GB1323025 A GB 1323025A
Authority
GB
United Kingdom
Prior art keywords
wafers
impurity
semi
conductor
carrier gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2817571A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1323025A publication Critical patent/GB1323025A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1323025 Semi-conductor devices MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 16 June 1971 [16 Jnne 1970] 28175/71 Heading H1K A diffusion process resulting in uniform sheet resistivity and junction depth in a plurality of wafers comprises arranging impurity source wafers 15, 15<SP>1</SP> between semi-conductor wafers 14, 14<SP>1</SP>, 14<SP>11</SP>, 14<SP>111</SP>, passing a carrier gas over the wafers at an average velocity of less than 6 mm./sec., the wafers being heated at between 800‹ and 1200‹ C. to vaporize oxide gas from the source wafers, the spacing between the wafers being equal to, or less than, 2 #Dt where D is the diffusion coefficient of the oxide gas in the carrier gas, and t is diffusion time in seconds. The semi-conductor wafers may be of silicon or germanium, the source wafers being a nitrile of boron, aluminium, indium, gallium or phosphorus having an oxide coating thereon formed by prior heating at between 900‹ and 1000‹ C. The carrier gas may be of nitrogen, heliumhydrogen, helium-nitrogen or hydrogen-nitrogen. Buffers may be provided in the furnace tube 10 in which diffusion takes places to ensure that the carrier gas does not disturb the impurity gas flow from the source wafers to semi-conductor wafers.
GB2817571A 1970-06-16 1971-06-16 Impurity diffusion process employing wafers made of desired impurity as impurity sources Expired GB1323025A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5224170A JPS4934265B1 (en) 1970-06-16 1970-06-16

Publications (1)

Publication Number Publication Date
GB1323025A true GB1323025A (en) 1973-07-11

Family

ID=12909210

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2817571A Expired GB1323025A (en) 1970-06-16 1971-06-16 Impurity diffusion process employing wafers made of desired impurity as impurity sources

Country Status (4)

Country Link
JP (1) JPS4934265B1 (en)
DE (1) DE2129931B2 (en)
GB (1) GB1323025A (en)
NL (1) NL153024B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03185717A (en) * 1989-12-14 1991-08-13 Toshiba Corp Manufacture of diffusion-type semiconductor element
EP0444356A3 (en) * 1989-12-29 1992-09-30 The Carborundum Company Diffusion apparatus for semiconductors

Also Published As

Publication number Publication date
JPS4934265B1 (en) 1974-09-12
DE2129931B2 (en) 1975-09-25
NL7108278A (en) 1971-12-20
DE2129931A1 (en) 1971-12-23
NL153024B (en) 1977-04-15

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years