JPS4934265B1 - - Google Patents

Info

Publication number
JPS4934265B1
JPS4934265B1 JP5224170A JP5224170A JPS4934265B1 JP S4934265 B1 JPS4934265 B1 JP S4934265B1 JP 5224170 A JP5224170 A JP 5224170A JP 5224170 A JP5224170 A JP 5224170A JP S4934265 B1 JPS4934265 B1 JP S4934265B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5224170A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5224170A priority Critical patent/JPS4934265B1/ja
Priority to DE19712129931 priority patent/DE2129931B2/en
Priority to NL7108278A priority patent/NL153024B/en
Priority to GB2817571A priority patent/GB1323025A/en
Publication of JPS4934265B1 publication Critical patent/JPS4934265B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP5224170A 1970-06-16 1970-06-16 Pending JPS4934265B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP5224170A JPS4934265B1 (en) 1970-06-16 1970-06-16
DE19712129931 DE2129931B2 (en) 1970-06-16 1971-06-16 Apparatus for diffusing an impurity in semiconductor wafers
NL7108278A NL153024B (en) 1970-06-16 1971-06-16 PROCEDURE FOR DIFFUSING A DOPING SUBSTANCE IN SEMICONDUCTOR PLATES AND SEMICONDUCTOR PLATES OBTAINED BY APPLICATION OF THE PROCEDURE.
GB2817571A GB1323025A (en) 1970-06-16 1971-06-16 Impurity diffusion process employing wafers made of desired impurity as impurity sources

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5224170A JPS4934265B1 (en) 1970-06-16 1970-06-16

Publications (1)

Publication Number Publication Date
JPS4934265B1 true JPS4934265B1 (en) 1974-09-12

Family

ID=12909210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5224170A Pending JPS4934265B1 (en) 1970-06-16 1970-06-16

Country Status (4)

Country Link
JP (1) JPS4934265B1 (en)
DE (1) DE2129931B2 (en)
GB (1) GB1323025A (en)
NL (1) NL153024B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03185717A (en) * 1989-12-14 1991-08-13 Toshiba Corp Manufacture of diffusion-type semiconductor element
EP0444356A3 (en) * 1989-12-29 1992-09-30 The Carborundum Company Diffusion apparatus for semiconductors

Also Published As

Publication number Publication date
DE2129931B2 (en) 1975-09-25
DE2129931A1 (en) 1971-12-23
GB1323025A (en) 1973-07-11
NL7108278A (en) 1971-12-20
NL153024B (en) 1977-04-15

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