GB1041504A - A process for melting a rod of crystalline material zone-by-zone - Google Patents

A process for melting a rod of crystalline material zone-by-zone

Info

Publication number
GB1041504A
GB1041504A GB16420/65A GB1642065A GB1041504A GB 1041504 A GB1041504 A GB 1041504A GB 16420/65 A GB16420/65 A GB 16420/65A GB 1642065 A GB1642065 A GB 1642065A GB 1041504 A GB1041504 A GB 1041504A
Authority
GB
United Kingdom
Prior art keywords
conductor
zone
coil
rod
removeable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16420/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1041504A publication Critical patent/GB1041504A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/02Induction heating
    • H05B6/22Furnaces without an endless core
    • H05B6/30Arrangements for remelting or zone melting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/20Heating of the molten zone by induction, e.g. hot wire technique
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901Levitation, reduced gravity, microgravity, space
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Abstract

At least one molten zone is passed upwards through a silicon rod having a diameter of 30-40 mm from a thin seed using a water-cooled induction coil associated with a lower short-circuited conductor and at least one further molten zone is passed upwards through the rod from the seed using a water-cooled induction coil without a lower short-circuited conductor. The same or a separate coil may be used in the second passage; in the former case, a non-removeable conductor is de-short-circuited. According to Fig. 1 (not shown), a coil 4 has a conductor in the form of a removeable closed ring 5. According to Fig. 4 (not shown), a non-removeable conductor is in the form of a water-cooled coil 15 having engageable electric contacts 16a and 16b which are opened, by varying the pressure of the cooling liquid, to de-short-circuit the conductor.
GB16420/65A 1964-04-15 1965-04-15 A process for melting a rod of crystalline material zone-by-zone Expired GB1041504A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES90543A DE1245319B (en) 1964-04-15 1964-04-15 Process for crucible-free zone melting

Publications (1)

Publication Number Publication Date
GB1041504A true GB1041504A (en) 1966-09-07

Family

ID=7515902

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16420/65A Expired GB1041504A (en) 1964-04-15 1965-04-15 A process for melting a rod of crystalline material zone-by-zone

Country Status (6)

Country Link
US (1) US3340017A (en)
BE (1) BE662546A (en)
CH (1) CH418311A (en)
DE (1) DE1245319B (en)
GB (1) GB1041504A (en)
NL (1) NL6502374A (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1164681B (en) * 1958-12-24 1964-03-05 Siemens Ag Process for the production of a uniformly doped rod made of semiconductor material by crucible-free zone melting
DE1115714B (en) * 1959-09-23 1961-10-26 Siemens Ag Process for the production of monocrystalline semiconductor material
NL130822C (en) * 1959-08-14

Also Published As

Publication number Publication date
US3340017A (en) 1967-09-05
BE662546A (en) 1965-10-15
CH418311A (en) 1966-08-15
DE1245319B (en) 1967-07-27
NL6502374A (en) 1965-10-18

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