DE1243641B - Process for the production of semiconductor rods by drawing from the melt - Google Patents
Process for the production of semiconductor rods by drawing from the meltInfo
- Publication number
- DE1243641B DE1243641B DES82821A DES0082821A DE1243641B DE 1243641 B DE1243641 B DE 1243641B DE S82821 A DES82821 A DE S82821A DE S0082821 A DES0082821 A DE S0082821A DE 1243641 B DE1243641 B DE 1243641B
- Authority
- DE
- Germany
- Prior art keywords
- melt
- rod
- semiconductor
- heated
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
AUSLEGESCHRIFTEDITORIAL
Int. CL: BOId Int. CL: BOId
BOIjBOIj
Deutsche Kl.: 12 c-2German class: 12 c-2
Nummer:
Aktenzeichen:
Anmeldetag:
Auslegetag:Number:
File number:
Registration date:
Display day:
1243 641
S 82821IV c/12 c
12. Dezember 1962
6. Juli 19671243 641
S 82821IV c / 12 c
December 12, 1962
July 6, 1967
Es ist bekannt, einkristalline Halbleiterstäbe durch Ziehen aus einer, in einem Tiegel sich befindenden Schmelze herzustellen. Bei dem Podest-Verfahren (»Growth and Perfection of Crystals«, herausgegeben von Doremus, Roberts and TurnbuU, Verlag John Wiley & Sons, Inc., New York, und Chapman and Hall, Ltd., London, 1958, Aufsatz von Dash, S. 336) wird auf einem geschlitzten Halbleiterstab eine tropfenförmige Schmelze erzeugt, beispielsweise mit Hilfe der Induktionsheizung, dann wird aus dieser Schmelze nach Eintauchen eines einkristallinen Keimkristalls ein Einkristall gezogen.It is known to produce monocrystalline semiconductor rods by pulling them out of a crucible Produce melt. In the podium process ("Growth and Perfection of Crystals", published by Doremus, Roberts and TurnbuU, published by John Wiley & Sons, Inc., New York, and Chapman and Hall, Ltd., London, 1958, essay by Dash, p. 336) is on a slotted semiconductor rod a Droplet-shaped melt is generated, for example with the help of induction heating, then becomes from this Melt pulled a single crystal after immersing a single crystal seed crystal.
Außerdem ist bereits bekannt, in einem mit Pulver aus Halbleitermaterial gefüllten Behälter an der Oberfläche der Pulverfüllung mit Hilfe einer Induktionsheizspule eine Mulde aufzuschmelzen, deren Wand aus festem Halbleitermaterial besteht. Aus der so hergestellten Schmelze wird durch die Spule hindurch ein Stab mit Hilfe eines Keimkristalles gezogen. Durch ein Fallrohr wird der Schmelzflüssigkeit in der ao Mulde pulverförmiges Vorratsmaterial zugeführt. Die Zufuhr dieses Vorratsmaterials ist regelbar.In addition, it is already known in a container filled with powder of semiconductor material on the To melt the surface of the powder filling with the help of an induction heating coil, its Wall is made of solid semiconductor material. The melt produced in this way is passed through the coil a rod drawn with the help of a seed crystal. The melt liquid in the ao Trough powdery storage material supplied. The supply of this stock material can be regulated.
Weiterhin ist bekannt, beim Ziehen eines Halbleiterstabes aus einem Tiegel der Schmelzflüssigkeit so viel stabförmiges Nachschubmaterial zuzuführen, daß die Höhe ihres Spiegels unverändert bleibt.It is also known that the molten liquid is used when pulling a semiconductor rod from a crucible to supply so much rod-shaped replenishment material that the height of their level remains unchanged.
Die Erfindung betrifft ein Verfahren zum Herstellen eines Halbleiterstabes durch Ziehen aus einer Schmelze, die von festem Halbleitermaterial gehalten wird und die vermittels einer, eine lotrechte Achse aufweisenden Induktionsheizspule, durch die der Halbleiterstab nach oben herausgezogen wird, beheizt wird, wobei der Schmelze stets so viel neues Halbleitermaterial zugeführt wird, daß der Oberflächenspiegel der Schmelze gewahrt bleibt. Erfindungsgemäß wird die Schmelze zusätzlich zu der Induktionsspule, durch die der Halbleiterstab nach oben herausgezogen wird, noch von einer daneben angeordneten, ebenfalls eine lotrechte Achse aufweisenden Induktionsspule beheizt, durch die das neue Halbleitermaterial in Stabform zugeführt wird. Es ist günstig, das feste Halbleitermaterial zusätzlich von außen zu beheizen.The invention relates to a method for producing a semiconductor rod by drawing from a Melt, which is held by solid semiconductor material and which by means of a, a vertical axis having induction heating coil, through which the semiconductor rod is pulled out upwards, heated is, the melt is always supplied so much new semiconductor material that the surface mirror the melt is preserved. According to the invention, the melt is in addition to the induction coil, through which the semiconductor rod is pulled out upwards, another one next to it arranged, also having a vertical axis heated induction coil, through which the new semiconductor material is supplied in rod form. It is beneficial to add the solid semiconductor material to be heated from the outside.
Das erfindungsgemäße Verfahren weist gegenüber den bekannten Verfahren verschiedene Vorteile auf.
Mit dem Ziehen aus einem Quarz- oder Graphittiegel läßt sich zwar durch Regelung der Temperatur der
Schmelze und/oder der Ziehgeschwindigkeit eine Regelung des Durchmessers des aufwachsenden
Halbleitermaterials erzielen. Bei Verwendung eines einkristallinen Keimkristalls lassen sich auf diese
Weise auch Einkristalle größeren Durchmessers her-Verf ahren zur Herstellung von Halbleiterstäben
durch Ziehen aus der SchmelzeThe method according to the invention has various advantages over the known methods. With pulling from a quartz or graphite crucible, control of the diameter of the growing semiconductor material can be achieved by controlling the temperature of the melt and / or the pulling speed. When using a single-crystal seed crystal, single crystals of larger diameter can also be produced in this way for the production of semiconductor rods
by drawing from the melt
Anmelder:Applicant:
Siemens Aktiengesellschaft, Berlin und München, Erlangen, Werner-von-Siemens-Str. 50Siemens Aktiengesellschaft, Berlin and Munich, Erlangen, Werner-von-Siemens-Str. 50
Als Erfinder benannt:Named as inventor:
Dr. rer. nat Wolfgang Keller,Dr. rer. nat Wolfgang Keller,
Dr. phil. Eberhard Spenke, PretzfeldDr. phil. Eberhard Spenke, Pretzfeld
stellen. Das Verfahren weist aber den Nachteil auf, daß aus der beheizten Tiegelwand Verunreinigungen, insbesondere Sauerstoff, in die Schmelze eindiffundieren können. Bei hochschmelzenden Stoffen, wie z. B. Silizium, treten weiter Schwierigkeiten dadurch auf, daß die Tiegelwand bereits plastisch verformbar wird. Beim tiegelfreien Zonenschmelzen hingegen lassen sich nur mit Schwierigkeiten Einkristalle mit einem Durchmesser von mehr als 25 mm herstellen. Die Herstellung von Einkristallen von mehr als 35 mm Durchmesser ist so gut wie unmöglich.place. However, the process has the disadvantage that impurities, especially oxygen, can diffuse into the melt. With high-melting substances, such as z. B. silicon, further difficulties arise in that the crucible wall is already plastically deformable will. In the case of crucible-free zone melting, on the other hand, single crystals can only be used with difficulty produce a diameter of more than 25 mm. The production of single crystals of more than 35 mm in diameter is next to impossible.
Mit dem erfindungsgemäßen Verfahren hingegen lassen sich Halbleiterstäbe größeren Durchmessers mit Leichtigkeit herstellen, wobei auch Einkristalle dieser Größe gezüchtet werden können. Eine Verunreinigung durch Eindiffusion von den Tiegelwänden kann ausgeschlossen werden, da diese selbst aus dem hochreinen Halbleitermaterial bestehen.With the method according to the invention, on the other hand, semiconductor rods with a larger diameter can be produced with ease, and single crystals of this size can also be grown. An impurity by diffusion from the crucible walls can be ruled out, as this itself is from consist of the high-purity semiconductor material.
Außerdem werden ein gleichmäßiges Aufschmelzen des der Schmelzflüssigkeit zugeführten Nachschubmaterials und eine gleichmäßige Temperatur der Schmelzflüssigkeit gewährleistet.In addition, the replenishment material supplied to the molten liquid will melt evenly and ensures a uniform temperature of the molten liquid.
In den Zeichnungen ist eine Vorrichtung für die Durchführung des erfindungsgemäßen Verfahrens dargestellt.In the drawings is an apparatus for performing the method according to the invention shown.
F i g. 1 zeigt die Vorrichtung in perspektivischer Darstellung,F i g. 1 shows the device in perspective,
Fig. 2 im Schnitt.Fig. 2 in section.
In einem Halbleiterblock 2 befindet sich eine Ausnehmung, an deren Boden eine Schmelze 3 lagert.
Diese Schmelze wird durch zwei Hochfrequenzspulen 4 und 5 induktiv beheizt. Aus der Schmelze
wird ein Halbleiterstab 6 nach oben herausgezogen, während der Schmelze ein anderer Halbleiterstab 7
zugeführt wird, wodurch der Oberflächenspiegel der Schmelze gewahrt bleibt. Wenn die beiden Halbleite,
stäbe den gleichen Durchmesser aufweisen, wieIn a semiconductor block 2 there is a recess, on the bottom of which a melt 3 is stored. This melt is inductively heated by two high-frequency coils 4 and 5. A semiconductor rod 6 is pulled upwards from the melt, while another semiconductor rod 7 is fed to the melt, as a result of which the surface level of the melt is preserved. If the two semiconductors
rods have the same diameter as
709709
der Figur dargestellt, so muß der nachgeschobene Stab 7 die gleiche Geschwindigkeit aufweisen wie der Stab 6, der herausgezogen wird. Selbstverständlich kann der nachgeschobene Stab auch einen anderen, kleineren oder größeren Durchmesser aufweisen, was sich durch eine entsprechende Regelung der Nachschubgeschwindigkeit ausgleichen läßt.Shown in the figure, the post pushed rod 7 must have the same speed as the Rod 6 that is pulled out. Of course, the rod that is pushed in can also be another have smaller or larger diameters, which can be achieved by regulating the feed rate accordingly can compensate.
Der nachgeschobene Stab 7 wird mit Hilfe der Induktionsheizspule 4 aufgeschmolzen.The rod 7 pushed afterwards is melted with the aid of the induction heating coil 4.
Der herausgezogene Stab kann in bekannter Weise in Drehung um seine Stabachse versetzt werden, wodurch ein rotationssymmetrisches Aufwachsen erreicht wird.The withdrawn rod can be set in rotation about its rod axis in a known manner, whereby a rotationally symmetrical growth is achieved.
Die den Induktionsspulen zugeführte Heizleistung kann etwa 5 kW betragen, die Drehzahl des herausgezogenen Stabes 10 bis 150 Umdrehungen pro Minute, z. B. 4O^3md"rehungen pro Minute.The heating power supplied to the induction coils can be around 5 kW, the speed of the extracted one Rod 10 to 150 revolutions per minute, e.g. B. 4O ^ 3md "revolutions per minute.
Claims (2)
Deutsche Patentschrift Nr. 973 231;
deutsche Auslegeschrift S 38055 VI/40d
(bekanntgemacht am 14.6.1956).Considered publications:
German Patent No. 973,231;
German interpretation document S 38055 VI / 40d
(announced on June 14, 1956).
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES82821A DE1243641B (en) | 1962-12-12 | 1962-12-12 | Process for the production of semiconductor rods by drawing from the melt |
CH1017563A CH420071A (en) | 1962-12-12 | 1963-08-16 | Process for the production of semiconductor rods by drawing from the melt |
US326945A US3261722A (en) | 1962-12-12 | 1963-11-29 | Process for preparing semiconductor ingots within a depression |
BE641091A BE641091A (en) | 1962-12-12 | 1963-12-11 | |
GB49022/63A GB1059960A (en) | 1962-12-12 | 1963-12-11 | The production of semi-conductor rods |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES82821A DE1243641B (en) | 1962-12-12 | 1962-12-12 | Process for the production of semiconductor rods by drawing from the melt |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1243641B true DE1243641B (en) | 1967-07-06 |
Family
ID=7510627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES82821A Pending DE1243641B (en) | 1962-12-12 | 1962-12-12 | Process for the production of semiconductor rods by drawing from the melt |
Country Status (5)
Country | Link |
---|---|
US (1) | US3261722A (en) |
BE (1) | BE641091A (en) |
CH (1) | CH420071A (en) |
DE (1) | DE1243641B (en) |
GB (1) | GB1059960A (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3470039A (en) * | 1966-12-21 | 1969-09-30 | Texas Instruments Inc | Continuous junction growth |
DE1519908A1 (en) * | 1966-12-30 | 1970-07-02 | Siemens Ag | Device for producing a crystalline rod by zone melting without a crucible |
US3607114A (en) * | 1969-10-13 | 1971-09-21 | Siemens Ag | Apparatus for producing a monocrystalline rod, particularly of semiconductor material |
US3776703A (en) * | 1970-11-30 | 1973-12-04 | Texas Instruments Inc | Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil |
US4650540A (en) * | 1975-07-09 | 1987-03-17 | Milton Stoll | Methods and apparatus for producing coherent or monolithic elements |
US4575401A (en) * | 1984-06-07 | 1986-03-11 | Wedtech Corp | Method of and apparatus for the drawing of bars of monocrystalline silicon |
US4548670A (en) * | 1984-07-20 | 1985-10-22 | Wedtech Corp. | Silicon melting and evaporation method for high purity applications |
US5958133A (en) * | 1996-01-29 | 1999-09-28 | General Signal Corporation | Material handling system for growing high-purity crystals |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE973231C (en) * | 1953-01-20 | 1959-12-24 | Telefunken Gmbh | Process for the production of single crystals by pulling from a melt |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL180311B (en) * | 1952-08-01 | Ciba Geigy | PROCESS FOR PREPARING N-HALOGENACYLANILINOALKAN CARBON ACID ESTERS AND PROCESS FOR PREPARATION OF MICROBICIDE PREPARATIONS FOR CONTROL OF PHYTOPATHOGEN FUNGI AND BACTERIA BASED ON SUCH ESTERS. | |
US2793103A (en) * | 1954-02-24 | 1957-05-21 | Siemens Ag | Method for producing rod-shaped bodies of crystalline material |
DE1017795B (en) * | 1954-05-25 | 1957-10-17 | Siemens Ag | Process for the production of the purest crystalline substances, preferably semiconductor substances |
BE542056A (en) * | 1954-10-15 | |||
US2979386A (en) * | 1956-08-02 | 1961-04-11 | Shockley William | Crystal growing apparatus |
US2890139A (en) * | 1956-12-10 | 1959-06-09 | Shockley William | Semi-conductive material purification method and apparatus |
NL237834A (en) * | 1958-04-09 | |||
US3084037A (en) * | 1960-01-08 | 1963-04-02 | Temescal Metallurgical Corp | Gaseous ion purification process |
US3160497A (en) * | 1962-11-15 | 1964-12-08 | Loung Pai Yen | Method of melting refractory metals using a double heating process |
-
1962
- 1962-12-12 DE DES82821A patent/DE1243641B/en active Pending
-
1963
- 1963-08-16 CH CH1017563A patent/CH420071A/en unknown
- 1963-11-29 US US326945A patent/US3261722A/en not_active Expired - Lifetime
- 1963-12-11 GB GB49022/63A patent/GB1059960A/en not_active Expired
- 1963-12-11 BE BE641091A patent/BE641091A/xx unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE973231C (en) * | 1953-01-20 | 1959-12-24 | Telefunken Gmbh | Process for the production of single crystals by pulling from a melt |
Also Published As
Publication number | Publication date |
---|---|
CH420071A (en) | 1966-09-15 |
GB1059960A (en) | 1967-02-22 |
US3261722A (en) | 1966-07-19 |
BE641091A (en) | 1964-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0527477B1 (en) | Process for controlling the oxygen content in silicon crystals | |
DE944209C (en) | Process for the manufacture of semiconductor bodies | |
DE1023889B (en) | Process for the production of the purest crystalline substances, preferably semiconductor substances | |
DE1210415B (en) | Process for crucible-free zone melting of a semiconductor rod obtained by drawing from the melt | |
DE1193022B (en) | Process for the production of the purest silicon | |
DE2639707A1 (en) | PROCEDURE FOR REGULATING THE OXYGEN CONTENT DURING THE PULLING OF SILICON CRYSTALS | |
DE1243641B (en) | Process for the production of semiconductor rods by drawing from the melt | |
DE10102126A1 (en) | Method and device for producing a single crystal from silicon | |
DE3325242C2 (en) | Method and apparatus for pulling a compound semiconductor single crystal | |
DE3333960A1 (en) | METHOD FOR PRODUCING DISPLACEMENT-FREE SINGLE-CRYSTAL RODS MADE FROM SILICON | |
DE1719024A1 (en) | Process for the production of a rod from semiconductor material for electronic purposes | |
DE69009831T2 (en) | Method of growing a single crystal. | |
DE2059360A1 (en) | Process for the production of homogeneous bars from semiconductor material | |
DE1251272B (en) | Method and device for producing a rod by drawing it from a melt | |
DE1767394A1 (en) | Process for the production of Mg-Al spinel crystals with stoechiometric composition for integrated circuits | |
WO1990004054A1 (en) | Process and device for pulling crystals according to the czochralski method | |
DE1254590B (en) | Method for crucible-free zone melting of semiconductor material, in particular silicon | |
DE1218412B (en) | Process for the production of single crystal semiconductor material | |
DE19806949A1 (en) | Crystal growth process control e.g. in the growth of germanium or silicon single crystals by the Czochralski method | |
DE19700517B4 (en) | single crystal growth | |
DE1209997B (en) | Process for the production of single crystals from fusible material | |
DE1240825B (en) | Process for pulling single crystals from semiconductor material | |
DE1113682B (en) | Method for pulling single crystals, in particular of semiconductor material, from a melt hanging on a pipe | |
DE1170913B (en) | Process for the production of crystalline silicon in rod form | |
AT223659B (en) | Process for the production of dislocation-free single crystal silicon by crucible-free zone melting |