DE1127785B - Charcoal and graphite molds for making semiconductors - Google Patents

Charcoal and graphite molds for making semiconductors

Info

Publication number
DE1127785B
DE1127785B DESCH27853A DESC027853A DE1127785B DE 1127785 B DE1127785 B DE 1127785B DE SCH27853 A DESCH27853 A DE SCH27853A DE SC027853 A DESC027853 A DE SC027853A DE 1127785 B DE1127785 B DE 1127785B
Authority
DE
Germany
Prior art keywords
charcoal
graphite
london
carbon
hard carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DESCH27853A
Other languages
German (de)
Inventor
Rer Nat Friedrich Wilhelm G Dr
Dr Rer Nat Gerd Hinrichs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schunk and Ebe GmbH
Original Assignee
Schunk and Ebe GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schunk and Ebe GmbH filed Critical Schunk and Ebe GmbH
Priority to DESCH27853A priority Critical patent/DE1127785B/en
Publication of DE1127785B publication Critical patent/DE1127785B/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/14—Crucibles or vessels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)

Description

Kunstkohle- und Graphitformen zum Herstellen von Halbleitern Zum Reinigen, Sintern und Legieren von Halbleiterbauelementen werden Formen aus Kunstkohle bzw. Graphit verwendet. Die Forderungen an diese Formen in bezug auf Reinheit, mechanische Abnutzung, Abbrandfestigkeit und glatter Oberfläche sind groß.Charcoal and graphite molds for manufacturing semiconductors For cleaning, Sintering and alloying of semiconductor components are made of charcoal or Graphite used. The demands on these forms in terms of purity, mechanical Wear, erosion resistance and smooth surface are great.

Die Ausgangsmaterialien, z. B. Germanium, werden nach verschiedenen Reinigungsprozessen in der letzten Reinigungsstufe einem Zonenschmelzverfahren unterworfen. In einem Graphitschiffehen wird jeweils eine schmale Zone eines stabförmigen, vorgereinigten Kristalls induktiv erhitzt und geschmolzen. Durch Wiederholen dieses Verfahrens läßt sich theoretisch jede gewünschte Reinheit erzielen. Praktisch kann der Reinheitsgrad des Graphitschiffchens nicht überschritten werden, da die Verunreinigungen des Graphits beim Erhitzen in den Kristall abwandern können. Diese Gefahr besteht auch beim Sinter- bzw. Legiervorgang, bei dem man ebenfalls fast ausschließlich Graphitformen verwendet. Auch muß darauf geachtet werden, daß die Oberflächen der Kunstkohle-bzw. Graphitformen restlos von Kohle- oder Graphitteilchen frei sind, wie sie durch die mechanische Bearbeitung der Formen entstehen, um ein Anhaften von diesen Teilchen am Halbleiter zu vermeiden.The starting materials, e.g. B. germanium, according to different Cleaning processes subjected to a zone melting process in the last cleaning stage. In a graphite ship, a narrow zone of a rod-shaped, pre-cleaned The crystal is inductively heated and melted. By repeating this procedure theoretically any desired purity can be achieved. The degree of purity can be practical of the graphite boat are not exceeded, as the impurities in the graphite can migrate into the crystal when heated. This danger also exists with sintering or alloying process in which graphite forms are also used almost exclusively. Care must also be taken that the surfaces of the charcoal or. Graphite molds are completely free of carbon or graphite particles, as they are due to the mechanical Machining of the shapes is created to prevent these particles from sticking to the semiconductor to avoid.

Erfindungsgemäß werden die zur Herstellung von Halbleitern und Halbleiterbauteile verwendeten Formen dadurch verbessert, daß man die aus Kunstkohle- bzw. Graphit bestehenden Formen mit einer Hartkohleschicht überzieht. Hierzu kann ein bekanntes, geeib etes Verfahren verwendet werden, wie es z. B. im deutschen Patent 402153 oder im Bericht von A. R. G. Brown und W. Watt, »The Preparation and Properties of High-Temperature Pyrolytic Carbon«, beschrieben ist.According to the invention, for the production of semiconductors and semiconductor components The forms used are improved by the fact that they are made of charcoal or graphite Coated existing molds with a hard carbon layer. A known, geeib etes method can be used, e.g. B. in German Patent 402153 or in the report by A. R. G. Brown and W. Watt, "The Preparation and Properties of High-Temperature Pyrolytic Carbon ".

Die erfindungsgemäß behandelten Formen zeichnen sich gegenüber den bisher verwendeten Formen 1. durch höhere Reinheit aus, da pyrolytisch gewonnene Hartkohle praktisch spektralrein ist; 2. durch erhöhte Abbrandfestigkeit; 3. durch geringere mechanische Abnutzung bei mehrmaligem Gebrauch und 4. durch Verringerung der Gefahr, daß Graphitstaub am Halbleiterkörper anhaftet, da nach dem Aufbringen der Hartkohleschicht keine mechanische Bearbeitung mehr erfolgt.The forms treated according to the invention are distinguished from the Forms used up to now 1. by higher purity, since pyrolytically obtained Hard coal is practically spectrally pure; 2. through increased erosion resistance; 3. through less mechanical wear and tear with repeated use and 4. through reduction the risk that graphite dust adheres to the semiconductor body, since after application the hard carbon layer is no longer subjected to mechanical processing.

Claims (1)

PATENTANSPRUCH: Verwendung von Hartkohleformkörpern oder mit einer Hartkohleschicht überzogenen Kohleformkörpern, die durch pyrolytischen Niederschlag von Kohle aus sehr reinen Kohlenwasserstoffen hergestellt werden, für das Aufschmelzen oder für die Wärmebehandlung von Halbleiterrohstoffen und Halbleiterbauteilen. In Betracht gezogene Druckschriften: Deutsche Patentschriften Nr. 402153, 438 429; Bericht von A. R. G. B rown und W. W att, »The Preparation and Properties of High-Temperature Pyrolytic Carbon«, erschienen in »Industrial Carbon and Graphite-Papers read at the Conference held in London 24th-26th Sept. 1957; Society of Chemical Industry, London 1958«; britische Patentschrift Nr. 809 486.PATENT CLAIM: Use of hard carbon molded bodies or with a Charcoal shaped bodies coated with a hard carbon layer, which are produced by pyrolytic precipitation made of coal from very pure hydrocarbons for melting or for the heat treatment of semiconductor raw materials and semiconductor components. In Documents considered: German Patent Specifications No. 402153, 438 429; Report by A. R. G. Brown and W. Watt, "The Preparation and Properties of High-Temperature Pyrolytic Carbon ", published in" Industrial Carbon and Graphite Papers read at the Conference held in London 24th-26th Sept. 1957; Society of Chemical Industry, London 1958 "; British Patent No. 809,486.
DESCH27853A 1960-05-06 1960-05-06 Charcoal and graphite molds for making semiconductors Pending DE1127785B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DESCH27853A DE1127785B (en) 1960-05-06 1960-05-06 Charcoal and graphite molds for making semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DESCH27853A DE1127785B (en) 1960-05-06 1960-05-06 Charcoal and graphite molds for making semiconductors

Publications (1)

Publication Number Publication Date
DE1127785B true DE1127785B (en) 1962-04-12

Family

ID=7430925

Family Applications (1)

Application Number Title Priority Date Filing Date
DESCH27853A Pending DE1127785B (en) 1960-05-06 1960-05-06 Charcoal and graphite molds for making semiconductors

Country Status (1)

Country Link
DE (1) DE1127785B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1270471B (en) * 1965-01-05 1968-06-12 Philips Nv Use of an object consisting of a surface layer of pyrolytic graphite for melting and vaporizing substances reactive with carbon

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE402153C (en) * 1923-09-06 1924-09-13 Curt Roechling Dr Ing Production of luster coal
DE438429C (en) * 1925-05-05 1926-12-18 Siemens & Halske Akt Ges Production of particularly hard carbon
GB809486A (en) * 1956-11-19 1959-02-25 Texas Instruments Inc Method and apparatus for producing single-crystal semiconductor material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE402153C (en) * 1923-09-06 1924-09-13 Curt Roechling Dr Ing Production of luster coal
DE438429C (en) * 1925-05-05 1926-12-18 Siemens & Halske Akt Ges Production of particularly hard carbon
GB809486A (en) * 1956-11-19 1959-02-25 Texas Instruments Inc Method and apparatus for producing single-crystal semiconductor material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1270471B (en) * 1965-01-05 1968-06-12 Philips Nv Use of an object consisting of a surface layer of pyrolytic graphite for melting and vaporizing substances reactive with carbon

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