GB900562A - Improvements in or relating to the production of semi-conductor material - Google Patents

Improvements in or relating to the production of semi-conductor material

Info

Publication number
GB900562A
GB900562A GB31129/60A GB3112960A GB900562A GB 900562 A GB900562 A GB 900562A GB 31129/60 A GB31129/60 A GB 31129/60A GB 3112960 A GB3112960 A GB 3112960A GB 900562 A GB900562 A GB 900562A
Authority
GB
United Kingdom
Prior art keywords
rod
pulled
diameter
drop
ring electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB31129/60A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB900562A publication Critical patent/GB900562A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

<PICT:0900562/III/1> The diameter of a rod being pulled from a melt is controlled by an electrostatic field produced by a ring electrode around the solid-liquid interface. The rod may be of silicon or genmanium. In the former case, the component of the field strength normal to the rod should be at least 5 kv./cm. As shown, a rod 1 is pulled from a molten drop 2 adhering to a rod 3, rod 1 being surrounded at the solid-liquid interface by a ring electrode 14 in electrical communication therewith via a direct current source 15. Drop 2 is maintained molten by an induction heating coil 4 and the drop is replenished by upward movement of rod 3. Pulling is effected in a vessel 16 containing a vacuum or a protective gas atmosphere. The capacitance between the rod and the ring electrode, which is proportional to the diameter of the rod, may be measured and utilized to control further the diameter of the rod by varying the speed of pulling or the strength of the electrostatic field. In a further embodiment (not shown), a rod is pulled through a perforated diaphragm from a molten mass in a crucible.
GB31129/60A 1959-09-11 1960-09-09 Improvements in or relating to the production of semi-conductor material Expired GB900562A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES64875A DE1278413B (en) 1959-09-11 1959-09-11 Process for pulling thin rod-shaped semiconductor crystals from a semiconductor melt

Publications (1)

Publication Number Publication Date
GB900562A true GB900562A (en) 1962-07-11

Family

ID=7497558

Family Applications (1)

Application Number Title Priority Date Filing Date
GB31129/60A Expired GB900562A (en) 1959-09-11 1960-09-09 Improvements in or relating to the production of semi-conductor material

Country Status (6)

Country Link
US (1) US3157472A (en)
CH (1) CH390554A (en)
DE (1) DE1278413B (en)
GB (1) GB900562A (en)
NL (1) NL255530A (en)
SE (1) SE301794B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519912B1 (en) * 1963-10-15 1970-06-18 Texas Instruments Inc Process for the production of dislocation-free, single-crystal semiconductor material

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1222476B (en) * 1961-03-09 1966-08-11 Siemens Ag Method for producing elongated, in particular dendritic semiconductor bodies by drawing from a melt
US3428436A (en) * 1963-12-16 1969-02-18 Monsanto Co Methods and apparatus for zone melting
US3453352A (en) * 1964-12-14 1969-07-01 Texas Instruments Inc Method and apparatus for producing crystalline semiconductor ribbon
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
US2842467A (en) * 1954-04-28 1958-07-08 Ibm Method of growing semi-conductors
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519912B1 (en) * 1963-10-15 1970-06-18 Texas Instruments Inc Process for the production of dislocation-free, single-crystal semiconductor material

Also Published As

Publication number Publication date
NL255530A (en)
DE1278413B (en) 1968-09-26
SE301794B (en) 1968-06-24
US3157472A (en) 1964-11-17
CH390554A (en) 1965-04-15

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