GB1008300A - Process for the manufacture of crystalline rods of semiconductor material - Google Patents

Process for the manufacture of crystalline rods of semiconductor material

Info

Publication number
GB1008300A
GB1008300A GB48204/63A GB4820463A GB1008300A GB 1008300 A GB1008300 A GB 1008300A GB 48204/63 A GB48204/63 A GB 48204/63A GB 4820463 A GB4820463 A GB 4820463A GB 1008300 A GB1008300 A GB 1008300A
Authority
GB
United Kingdom
Prior art keywords
rod
melt
pulling
measuring
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48204/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB1008300A publication Critical patent/GB1008300A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,008,300. Crystal - pulling. SIEMENS & HALKE A.G. Dec. 6, 1963 [Dec. 7, 1962], No. 48204/63. Heading B1S The diameter of a rod of monocrystalline semi-conductor material is maintained substantially constant during crystal-pulling from a melt by continuously measuring the increasing weight of the rod and utilizing any difference from a predetermined value to correct the diameter by varying the temperature of the melt or the rate of pulling. The weight may be measured by means of a plurality of strain gauges in series or a piezoelectric dynamometer; by measuring the electrical resistance of the rod or a voltage drop or current flow in the rod ; or by measuring the decreasing weight of the crucible. When varying the temperature of the melt, the pulling rate may be maintained constant by using a synchronous electric motor or a motor equipped with a centrifugal governor. As shown, a rod 3 is pulled from a melt 2 in an evacuated chamber 10 by means of a holder 4 and a slidable tube 9 which passes through packing 6. Strain gauges 7 are attached to the inside of the lower end 8 of tube 9, which lower end is of thin walled material, and are connected to a control circuit (not shown) through leads 11 and 12.
GB48204/63A 1962-12-07 1963-12-06 Process for the manufacture of crystalline rods of semiconductor material Expired GB1008300A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES82753A DE1245317B (en) 1962-12-07 1962-12-07 Process for the production of rod-shaped, crystalline semiconductor material by drawing from a melt located in the crucible

Publications (1)

Publication Number Publication Date
GB1008300A true GB1008300A (en) 1965-10-27

Family

ID=7510573

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48204/63A Expired GB1008300A (en) 1962-12-07 1963-12-06 Process for the manufacture of crystalline rods of semiconductor material

Country Status (5)

Country Link
US (1) US3259467A (en)
CH (1) CH426739A (en)
DE (1) DE1245317B (en)
GB (1) GB1008300A (en)
NL (1) NL300759A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
CH580805A5 (en) * 1975-04-14 1976-10-15 Prolizenz Ag
JPS5912633B2 (en) * 1975-04-28 1984-03-24 （株） ビ−イ−イ− Diameter deviation detection method in Yusho pulling device
DE3735879C2 (en) * 1987-10-23 1995-07-20 Leybold Ag Method and device for sintering ceramic blanks
US5560759A (en) * 1994-11-14 1996-10-01 Lucent Technologies Inc. Core insertion method for making optical fiber preforms and optical fibers fabricated therefrom
JP3109564B2 (en) * 1995-03-27 2000-11-20 大倉電気株式会社 Weight measuring device for grown crystal

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2908004A (en) * 1957-05-10 1959-10-06 Levinson John Temperature control for crystal pulling
DE1153908B (en) * 1958-04-22 1963-09-05 Siemens Ag Method and device for crucible-free zone melting with changing the spacing of the rod ends
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods

Also Published As

Publication number Publication date
US3259467A (en) 1966-07-05
CH426739A (en) 1966-12-31
DE1245317B (en) 1967-07-27
NL300759A (en)

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