GB1287789A - Crystal pulling device - Google Patents

Crystal pulling device

Info

Publication number
GB1287789A
GB1287789A GB58212/69A GB5821269A GB1287789A GB 1287789 A GB1287789 A GB 1287789A GB 58212/69 A GB58212/69 A GB 58212/69A GB 5821269 A GB5821269 A GB 5821269A GB 1287789 A GB1287789 A GB 1287789A
Authority
GB
United Kingdom
Prior art keywords
pulling
temperature
thermocouple
constant
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB58212/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of GB1287789A publication Critical patent/GB1287789A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Abstract

1287789 Crystal-pulling. KOKUSAI DENKI KK 28 Nov 1969 [6 Dec 1968] 48212/69 Heading BIS [Also in Division G3] A silicon rod 20 is pulled from a melt contained in a rotating quartz crucible 3b and heated by a cylindrical resistance heater 4 supplied with an amount of power dependent on a signal from a temperature-sensing thermocouple 5 maintained substantially at the level of the solid/liquid interface, so as to maintain substantially constant the temperature of said interface. The heater and thermocouple may be moved down at a constant (e.g. 0.1 mm/min) or variable rate determined by calculation or practical test. Pulling may be effected in an atmosphere of argon.
GB58212/69A 1968-12-06 1969-11-28 Crystal pulling device Expired GB1287789A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8914268 1968-12-06

Publications (1)

Publication Number Publication Date
GB1287789A true GB1287789A (en) 1972-09-06

Family

ID=13962605

Family Applications (1)

Application Number Title Priority Date Filing Date
GB58212/69A Expired GB1287789A (en) 1968-12-06 1969-11-28 Crystal pulling device

Country Status (6)

Country Link
US (1) US3700412A (en)
BE (1) BE742712A (en)
DE (1) DE1961521C3 (en)
FR (1) FR2025503A1 (en)
GB (1) GB1287789A (en)
NL (1) NL6917879A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098471A2 (en) * 1982-07-09 1984-01-18 International Business Machines Corporation Method of growing silicon crystals by the Czochralski method
CN112301425A (en) * 2019-07-31 2021-02-02 内蒙古中环光伏材料有限公司 Large-argon flow crystal pulling method for large-size monocrystalline silicon rod

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7207136A (en) * 1971-07-07 1973-01-09
BE790657R (en) * 1971-10-27 1973-02-15 Siemens Ag ELECTRICAL HEATING DEVICE FOR A BAR
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
US5240685A (en) * 1982-07-08 1993-08-31 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for growing a GaAs single crystal by pulling from GaAs melt
US5560759A (en) * 1994-11-14 1996-10-01 Lucent Technologies Inc. Core insertion method for making optical fiber preforms and optical fibers fabricated therefrom
US6458201B2 (en) * 1997-08-19 2002-10-01 Shin-Etsu Handotai Co., Ltd. Apparatus for producing single crystals and method for producing single crystals

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098471A2 (en) * 1982-07-09 1984-01-18 International Business Machines Corporation Method of growing silicon crystals by the Czochralski method
EP0098471A3 (en) * 1982-07-09 1985-05-15 International Business Machines Corporation Method of growing silicon crystals by the czochralski method
CN112301425A (en) * 2019-07-31 2021-02-02 内蒙古中环光伏材料有限公司 Large-argon flow crystal pulling method for large-size monocrystalline silicon rod

Also Published As

Publication number Publication date
FR2025503A1 (en) 1970-09-11
DE1961521A1 (en) 1970-08-13
DE1961521C3 (en) 1974-03-07
BE742712A (en) 1970-05-14
DE1961521B2 (en) 1972-06-15
US3700412A (en) 1972-10-24
NL6917879A (en) 1970-06-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees