GB913427A - Improvements in or relating to methods of, and apparatus for, producing semi-conductor material - Google Patents

Improvements in or relating to methods of, and apparatus for, producing semi-conductor material

Info

Publication number
GB913427A
GB913427A GB30755/61A GB3075561A GB913427A GB 913427 A GB913427 A GB 913427A GB 30755/61 A GB30755/61 A GB 30755/61A GB 3075561 A GB3075561 A GB 3075561A GB 913427 A GB913427 A GB 913427A
Authority
GB
United Kingdom
Prior art keywords
rod
image
cell
photo
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30755/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB913427A publication Critical patent/GB913427A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1906—Control of temperature characterised by the use of electric means using an analogue comparing device
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/27—Control of temperature characterised by the use of electric means with sensing element responsive to radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

913,427. Photo-electric control systems. SIEMENS & HALSKE A.G. Aug. 25, 1961 [Aug. 25, 1960], No. 30755/61. Class 40 (3). In the production of semi-conductor material, such as silicon with trace impurities, a carrier rod of silicon is mounted in a quartz chamber and heated to a temperature of 1100‹ C. by the passage of direct current. A suitable reaction gas is fed into the chamber and silicon semi-conductor deposited on the heated carrier either in mono-crystalline form or polycrystalline form. As the cross-sectional area of the rod increases its temperature would tend to fall if the heating current remained constant. To maintain the rod temperature substantially constant it is proposed to monitor the size of the rod photo-electrically and to effect a control of the heating current in accordance with it. As shown, the chamber 1 has a flat window 2 and an image of the rod 3 is formed at 9 by lens 6. A photo-cell 10 is mounted close to the edge of image 9 and when the image increases in size the cell is illuminated and motor 14 switched on by relay 11 to rotate threaded rod 13. This moves cell 10 by means of runner 12 until the cell is again beyond the image and at the same time rotates disc 15 to vary a resistor or rotary transformer in the heater current circuit. If required, to achieve greater accuracy, a second photo-cell system may be used monitoring the position of the other extremity of image 9.
GB30755/61A 1960-08-25 1961-08-25 Improvements in or relating to methods of, and apparatus for, producing semi-conductor material Expired GB913427A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES70069A DE1139813B (en) 1960-08-25 1960-08-25 Process for the production of high purity silicon or germanium rods

Publications (1)

Publication Number Publication Date
GB913427A true GB913427A (en) 1962-12-19

Family

ID=7501430

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30755/61A Expired GB913427A (en) 1960-08-25 1961-08-25 Improvements in or relating to methods of, and apparatus for, producing semi-conductor material

Country Status (3)

Country Link
CH (1) CH391672A (en)
DE (1) DE1139813B (en)
GB (1) GB913427A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011015330A3 (en) * 2009-08-03 2011-10-13 Graeber Engineering Consultants Gmbh Flange for a cvd reactor housing, use of a camera in a cvd method, and cvd method for producing silicon rods

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2609564A1 (en) * 1976-03-08 1977-09-15 Siemens Ag PROCESS FOR SEPARATING ELEMENTAL SILICON FROM THE GAS PHASE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011015330A3 (en) * 2009-08-03 2011-10-13 Graeber Engineering Consultants Gmbh Flange for a cvd reactor housing, use of a camera in a cvd method, and cvd method for producing silicon rods

Also Published As

Publication number Publication date
DE1139813B (en) 1962-11-22
CH391672A (en) 1965-05-15

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