GB1243930A - Improvements in or relating to the production of monocrystals - Google Patents
Improvements in or relating to the production of monocrystalsInfo
- Publication number
- GB1243930A GB1243930A GB02654/70A GB1265470A GB1243930A GB 1243930 A GB1243930 A GB 1243930A GB 02654/70 A GB02654/70 A GB 02654/70A GB 1265470 A GB1265470 A GB 1265470A GB 1243930 A GB1243930 A GB 1243930A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crucible
- liquid
- vessel
- monocrystals
- march
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
- F16C2208/00—Plastics; Synthetic resins, e.g. rubbers
- F16C2208/80—Thermosetting resins
- F16C2208/90—Phenolic resin
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1,243,930. Crystal pulling. SIEMENS A.G. 17 March, 1970 [18 March, 1969], No. 12654/ 70. Heading B1S. Monocrystals of compounds which decompose easily at their m.p., e.g. GaAs, are pulled from a melt 6 in a crucible 5 which is disposed in a bath of liquid 7 with the liquid level below the lip of the crucible. The seed crystal support 9 is affixed to and contained within an open-mouthed vessel 8, the lips of which are kept below the level of the liquid 7 whereby the crucible 5 is wholly enclosed. As the crystal 13 grows on the seed 12 the vessel 8 is raised and may also be rotated about its axis. The liquid 7 may be a melt of B 2 O 3 , Ga or CaCl 2 . Vessel 8 may be quartz and crucible 3 of Ir, Rh, Pt or graphite. Induction coil 4 is provided to heat this crucible. The system may be enclosed under vacuum or an atmosphere of A or N, inside tube 1.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691913682 DE1913682C3 (en) | 1969-03-18 | Device for the production of single crystals from semiconducting compounds |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1243930A true GB1243930A (en) | 1971-08-25 |
Family
ID=5728503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB02654/70A Expired GB1243930A (en) | 1969-03-18 | 1970-03-17 | Improvements in or relating to the production of monocrystals |
Country Status (8)
Country | Link |
---|---|
US (1) | US3716345A (en) |
AT (1) | AT323236B (en) |
CA (1) | CA933070A (en) |
CH (1) | CH541989A (en) |
FR (1) | FR2039601A5 (en) |
GB (1) | GB1243930A (en) |
NL (1) | NL6917398A (en) |
SE (1) | SE363244B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49113777A (en) * | 1973-02-12 | 1974-10-30 | ||
GB2207617A (en) * | 1987-08-06 | 1989-02-08 | Atomic Energy Authority Uk | Single crystal pulling |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3915656A (en) * | 1971-06-01 | 1975-10-28 | Tyco Laboratories Inc | Apparatus for growing crystalline bodies from the melt |
DE2259353C3 (en) * | 1972-12-04 | 1975-07-10 | Heraeus-Quarzschmelze Gmbh, 6450 Hanau | Crucibles made of quartz glass or fused silica for use in growing single crystals |
US3857679A (en) * | 1973-02-05 | 1974-12-31 | Univ Southern California | Crystal grower |
US4045181A (en) * | 1976-12-27 | 1977-08-30 | Monsanto Company | Apparatus for zone refining |
DK371977A (en) * | 1977-08-22 | 1979-02-23 | Topsil As | METHOD AND APPLIANCE FOR REFINING SALMON MATERIAL |
DE3005492C2 (en) * | 1980-02-14 | 1983-10-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Process for the production of the purest single crystals by crucible pulling according to Czochralski |
DE3466785D1 (en) * | 1983-08-06 | 1987-11-19 | Sumitomo Electric Industries | Apparatus for the growth of single crystals |
DE3472577D1 (en) * | 1983-08-31 | 1988-08-11 | Japan Res Dev Corp | Apparatus for growing single crystals of dissociative compounds |
JPS60112695A (en) * | 1983-11-22 | 1985-06-19 | Sumitomo Electric Ind Ltd | Pulling method of compound single crystal |
JPS60251191A (en) * | 1984-05-25 | 1985-12-11 | Res Dev Corp Of Japan | Process for growing single crystal of compound having high dissociation pressure |
EP0186213B1 (en) * | 1984-12-28 | 1990-05-02 | Sumitomo Electric Industries Limited | Method for synthesizing compound semiconductor polycrystals and apparatus therefor |
JPS623096A (en) * | 1985-06-27 | 1987-01-09 | Res Dev Corp Of Japan | Growth of compound semiconductor single crystal having high dissociation pressure |
SU1592414A1 (en) * | 1986-11-26 | 1990-09-15 | Vni Pk T I Elektrotermicheskog | Method and apparatus for growing profiled crystals of high-melting compounds |
JPH01192789A (en) * | 1988-01-27 | 1989-08-02 | Toshiba Corp | Crystal-pulling up device and pulling up method |
JP2755588B2 (en) * | 1988-02-22 | 1998-05-20 | 株式会社東芝 | Crystal pulling method |
US5047112A (en) * | 1990-08-14 | 1991-09-10 | The United States Of America As Represented By The United States Department Of Energy | Method for preparing homogeneous single crystal ternary III-V alloys |
CA2083858C (en) * | 1992-01-30 | 1997-10-14 | James William Fleming, Jr. | Iridium fiber draw induction furnace |
WO1998035074A1 (en) * | 1997-02-06 | 1998-08-13 | Crysteco, Inc. | Method and apparatus for growing crystals |
DE19753477A1 (en) * | 1997-12-02 | 1999-06-10 | Wacker Siltronic Halbleitermat | Method and heating device for melting semiconductor material |
WO2006028868A2 (en) | 2004-09-01 | 2006-03-16 | Rensselaer Polytechnic Institute | Method and apparatus for growth of multi-component single crystals |
DE102006050901A1 (en) * | 2005-11-17 | 2007-05-31 | Solarworld Industries Deutschland Gmbh | Production of semiconductor body, e.g. for photovoltaic cell, by directionally recrystallizing portion of source melt to form intermediate crystal, disposing of residue portion, melting portion of intermediate crystal, and crystallizing |
US8114218B2 (en) * | 2008-09-02 | 2012-02-14 | Siemens Medical Solutions Usa, Inc. | Crucible for a crystal pulling apparatus |
DE102011089501B4 (en) * | 2011-12-21 | 2013-10-10 | Freiberger Compound Materials Gmbh | Apparatus and method for vaporizing material from a molten metal |
WO2019079879A1 (en) | 2017-10-27 | 2019-05-02 | Kevin Allan Dooley Inc. | A system and method for manufacturing high purity silicon |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2892739A (en) * | 1954-10-01 | 1959-06-30 | Honeywell Regulator Co | Crystal growing procedure |
NL244873A (en) * | 1958-11-17 | |||
US3088853A (en) * | 1959-11-17 | 1963-05-07 | Texas Instruments Inc | Method of purifying gallium by recrystallization |
US3198606A (en) * | 1961-01-23 | 1965-08-03 | Ibm | Apparatus for growing crystals |
BE626374A (en) * | 1961-12-22 |
-
1969
- 1969-11-19 NL NL6917398A patent/NL6917398A/xx unknown
-
1970
- 1970-03-13 US US00019289A patent/US3716345A/en not_active Expired - Lifetime
- 1970-03-13 FR FR7009079A patent/FR2039601A5/fr not_active Expired
- 1970-03-16 AT AT243170A patent/AT323236B/en not_active IP Right Cessation
- 1970-03-17 CH CH393770A patent/CH541989A/en not_active IP Right Cessation
- 1970-03-17 GB GB02654/70A patent/GB1243930A/en not_active Expired
- 1970-03-18 SE SE03677/70A patent/SE363244B/xx unknown
- 1970-03-18 CA CA077724A patent/CA933070A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49113777A (en) * | 1973-02-12 | 1974-10-30 | ||
JPS545798B2 (en) * | 1973-02-12 | 1979-03-20 | ||
GB2207617A (en) * | 1987-08-06 | 1989-02-08 | Atomic Energy Authority Uk | Single crystal pulling |
Also Published As
Publication number | Publication date |
---|---|
US3716345A (en) | 1973-02-13 |
AT323236B (en) | 1975-06-25 |
SE363244B (en) | 1974-01-14 |
DE1913682A1 (en) | 1970-10-15 |
CH541989A (en) | 1973-09-30 |
CA933070A (en) | 1973-09-04 |
NL6917398A (en) | 1970-09-22 |
FR2039601A5 (en) | 1971-01-15 |
DE1913682B2 (en) | 1975-07-03 |
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