GB1229900A - - Google Patents

Info

Publication number
GB1229900A
GB1229900A GB1229900DA GB1229900A GB 1229900 A GB1229900 A GB 1229900A GB 1229900D A GB1229900D A GB 1229900DA GB 1229900 A GB1229900 A GB 1229900A
Authority
GB
United Kingdom
Prior art keywords
whiskers
metal
auxiliary source
partial pressure
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1229900A publication Critical patent/GB1229900A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,229,900. Growing whiskers. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 10 April, 1969 [13 April, 1968], No. 18376/69. Heading B1S. In the growth of depending crystal whiskers by the VLS method using drops of a molten metal as solvent, the vapour pressure of the metal is controlled to prevent continuous evaporation of metal from the growing whiskers and consequently tapered growth. Whiskers of constant or variable thickness may be produced. The partial pressure may be varied by varying (a) the pressure in the crystallization zone, (b) the temperature of an auxiliary source of the metal, or (c) the rate of flow of gas to the crystallization zone. The partial pressure may be temporarily lowered by adding a reactant substance to the gas. The partial pressure of the metal may be finally increased for a short time so as to form a metal coating on the whiskers. As shown, SiC whiskers are grown, with the aid of Fe droplets, from a SiC lid of a heated graphite crucible 1 containing particles 2 of SiO 2 (2) and an auxiliary source of Fe in a graphite tray 3. Alternatively, the Fe may be supplied in a stream of hydrogen from an auxiliary source (Fig. 2). In the production of Si whiskers on a Si disc from SiCl 4 with the aid of Au droplets, Au may be supplied in a gas stream of hydrogen containing SiCl 4 from an auxiliary source, Cl 2 being added to the gas stream to decrease the thickness of the whiskers intermittently (Fig. 3).
GB1229900D 1968-04-13 1969-04-10 Expired GB1229900A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805300A NL6805300A (en) 1968-04-13 1968-04-13

Publications (1)

Publication Number Publication Date
GB1229900A true GB1229900A (en) 1971-04-28

Family

ID=19803336

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1229900D Expired GB1229900A (en) 1968-04-13 1969-04-10

Country Status (9)

Country Link
US (1) US3632405A (en)
BE (1) BE731440A (en)
CH (1) CH538300A (en)
DE (1) DE1917136C3 (en)
ES (1) ES365930A1 (en)
FR (1) FR2006185A1 (en)
GB (1) GB1229900A (en)
NL (1) NL6805300A (en)
NO (1) NO124059B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404836A (en) * 1989-02-03 1995-04-11 Milewski; John V. Method and apparatus for continuous controlled production of single crystal whiskers
JP2697474B2 (en) * 1992-04-30 1998-01-14 松下電器産業株式会社 Manufacturing method of microstructure
RU2099808C1 (en) * 1996-04-01 1997-12-20 Евгений Инвиевич Гиваргизов Process of growing of oriented systems of whiskers and gear for its implementation ( versions )
US6221154B1 (en) * 1999-02-18 2001-04-24 City University Of Hong Kong Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3346414A (en) * 1964-01-28 1967-10-10 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
US3493431A (en) * 1966-11-25 1970-02-03 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique

Also Published As

Publication number Publication date
FR2006185A1 (en) 1969-12-19
NL6805300A (en) 1969-10-15
CH538300A (en) 1973-06-30
DE1917136B2 (en) 1973-10-04
NO124059B (en) 1972-02-28
DE1917136C3 (en) 1974-05-16
US3632405A (en) 1972-01-04
BE731440A (en) 1969-10-13
DE1917136A1 (en) 1970-09-24
ES365930A1 (en) 1971-03-16

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee