AT323236B - Apparatus for the manufacture of single crystals Czochralski method from haleleitenden compounds according to the - Google Patents

Apparatus for the manufacture of single crystals Czochralski method from haleleitenden compounds according to the

Info

Publication number
AT323236B
AT323236B AT243170A AT243170A AT323236B AT 323236 B AT323236 B AT 323236B AT 243170 A AT243170 A AT 243170A AT 243170 A AT243170 A AT 243170A AT 323236 B AT323236 B AT 323236B
Authority
AT
Austria
Prior art keywords
haleleitenden
czochralski
crystals
compounds
manufacture
Prior art date
Application number
AT243170A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE1913682A priority Critical patent/DE1913682B2/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT323236B publication Critical patent/AT323236B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42Gallium arsenide
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L47/00Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16CSHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C2208/00Plastics; Synthetic resins, e.g. rubbers
    • F16C2208/80Thermosetting resins
    • F16C2208/90Phenolic resin
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1052Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1068Seed pulling including heating or cooling details [e.g., shield configuration]
AT243170A 1969-03-18 1970-03-16 Apparatus for the manufacture of single crystals Czochralski method from haleleitenden compounds according to the AT323236B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1913682A DE1913682B2 (en) 1969-03-18 1969-03-18

Publications (1)

Publication Number Publication Date
AT323236B true AT323236B (en) 1975-06-25

Family

ID=5728503

Family Applications (1)

Application Number Title Priority Date Filing Date
AT243170A AT323236B (en) 1969-03-18 1970-03-16 Apparatus for the manufacture of single crystals Czochralski method from haleleitenden compounds according to the

Country Status (9)

Country Link
US (1) US3716345A (en)
AT (1) AT323236B (en)
CA (1) CA933070A (en)
CH (1) CH541989A (en)
DE (1) DE1913682B2 (en)
FR (1) FR2039601A5 (en)
GB (1) GB1243930A (en)
NL (1) NL6917398A (en)
SE (1) SE363244B (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3915656A (en) * 1971-06-01 1975-10-28 Tyco Laboratories Inc Apparatus for growing crystalline bodies from the melt
JPS545798B2 (en) * 1973-02-12 1979-03-20
DE2259353C3 (en) * 1972-12-04 1975-07-10 Heraeus-Quarzschmelze Gmbh, 6450 Hanau
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
DE2306755C2 (en) * 1973-02-12 1983-04-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
DK371977A (en) * 1977-08-22 1979-02-23 Topsil As Method and apparatus for the refining of semiconductor material
DE3005492C2 (en) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen, De
DE3466785D1 (en) * 1983-08-06 1987-11-19 Sumitomo Electric Industries Apparatus for the growth of single crystals
DE3472577D1 (en) * 1983-08-31 1988-08-11 Japan Res Dev Corp Apparatus for growing single crystals of dissociative compounds
JPH0567599B2 (en) * 1983-11-22 1993-09-27 Sumitomo Electric Industries
JPS60251191A (en) * 1984-05-25 1985-12-11 Res Dev Corp Of Japan Process for growing single crystal of compound having high dissociation pressure
EP0186213B1 (en) * 1984-12-28 1990-05-02 Sumitomo Electric Industries Limited Method for synthesizing compound semiconductor polycrystals and apparatus therefor
JPH0314800B2 (en) * 1985-06-27 1991-02-27 Shingijutsu Jigyodan
SU1592414A1 (en) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Method and apparatus for growing profiled crystals of high-melting compounds
GB8718643D0 (en) * 1987-08-06 1987-09-09 Atomic Energy Authority Uk Single crystal pulling
JPH0511075B2 (en) * 1988-01-27 1993-02-12 Tokyo Shibaura Electric Co
JP2755588B2 (en) * 1988-02-22 1998-05-20 株式会社東芝 Crystal pulling method
US5047112A (en) * 1990-08-14 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Method for preparing homogeneous single crystal ternary III-V alloys
CA2083858C (en) * 1992-01-30 1997-10-14 James William Fleming, Jr. Iridium fiber draw induction furnace
US6059876A (en) * 1997-02-06 2000-05-09 William H. Robinson Method and apparatus for growing crystals
DE19753477A1 (en) * 1997-12-02 1999-06-10 Wacker Siltronic Halbleitermat Method and heating device for melting semiconductor material
WO2006028868A2 (en) * 2004-09-01 2006-03-16 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
DE102006050901A1 (en) * 2005-11-17 2007-05-31 Solarworld Industries Deutschland Gmbh Production of semiconductor body, e.g. for photovoltaic cell, by directionally recrystallizing portion of source melt to form intermediate crystal, disposing of residue portion, melting portion of intermediate crystal, and crystallizing
US8114218B2 (en) * 2008-09-02 2012-02-14 Siemens Medical Solutions Usa, Inc. Crucible for a crystal pulling apparatus
DE102011089501B4 (en) * 2011-12-21 2013-10-10 Freiberger Compound Materials Gmbh Apparatus and method for vaporizing material from a molten metal

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
NL244873A (en) * 1958-11-17
US3088853A (en) * 1959-11-17 1963-05-07 Texas Instruments Inc Method of purifying gallium by recrystallization
US3198606A (en) * 1961-01-23 1965-08-03 Ibm Apparatus for growing crystals
BE626374A (en) * 1961-12-22

Also Published As

Publication number Publication date
US3716345A (en) 1973-02-13
DE1913682A1 (en) 1970-10-15
CA933070A1 (en)
DE1913682B2 (en) 1975-07-03
SE363244B (en) 1974-01-14
CH541989A (en) 1973-09-30
FR2039601A5 (en) 1971-01-15
GB1243930A (en) 1971-08-25
NL6917398A (en) 1970-09-22
CA933070A (en) 1973-09-04

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee