JPS52130487A - Crucible to be used in device for pulling up single crystal of semic onducto r - Google Patents

Crucible to be used in device for pulling up single crystal of semic onducto r

Info

Publication number
JPS52130487A
JPS52130487A JP4718976A JP4718976A JPS52130487A JP S52130487 A JPS52130487 A JP S52130487A JP 4718976 A JP4718976 A JP 4718976A JP 4718976 A JP4718976 A JP 4718976A JP S52130487 A JPS52130487 A JP S52130487A
Authority
JP
Japan
Prior art keywords
pulling
single crystal
crucible
onducto
semic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4718976A
Other languages
Japanese (ja)
Inventor
Zenzo Yamashita
Asaji Kawanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4718976A priority Critical patent/JPS52130487A/en
Publication of JPS52130487A publication Critical patent/JPS52130487A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To reduce remarkably oxygen atoms in silicon of single crystal and to produce single crystals of semiconductor which does not bring about the change of resistivity and do not require the heat treatment for extinguishing the donor level after the completion of pulling up, by making the crucible to be used in the device for pulling up the single crystal of semiconductor with silicon nitride of high purity.
JP4718976A 1976-04-27 1976-04-27 Crucible to be used in device for pulling up single crystal of semic onducto r Pending JPS52130487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4718976A JPS52130487A (en) 1976-04-27 1976-04-27 Crucible to be used in device for pulling up single crystal of semic onducto r

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4718976A JPS52130487A (en) 1976-04-27 1976-04-27 Crucible to be used in device for pulling up single crystal of semic onducto r

Publications (1)

Publication Number Publication Date
JPS52130487A true JPS52130487A (en) 1977-11-01

Family

ID=12768148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4718976A Pending JPS52130487A (en) 1976-04-27 1976-04-27 Crucible to be used in device for pulling up single crystal of semic onducto r

Country Status (1)

Country Link
JP (1) JPS52130487A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920067A (en) * 1987-10-07 1990-04-24 Jamie Knapp Process for II-VI compound epitaxy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920067A (en) * 1987-10-07 1990-04-24 Jamie Knapp Process for II-VI compound epitaxy

Similar Documents

Publication Publication Date Title
FR1419372A (en) Method for growing crystalline, in particular monocrystalline, and doped semiconductor layers on semiconductor crystals
JPS52130487A (en) Crucible to be used in device for pulling up single crystal of semic onducto r
GB921037A (en) Improvements in or relating to the preparation of single crystals of silicon
JPS534473A (en) Silicon semiconductor device
JPS5326663A (en) Manu facture of semiconductor device
JPS5344170A (en) Production of semiconductor device
JPS5621313A (en) Manufacture of semiconductor device
JPS5225564A (en) Semiconductor thin-film monocrystal
JPS54586A (en) Production of semiconductor device
JPS5242367A (en) Method of preventing occurence of crystal defects of silicon wafers
JPS5246777A (en) Semiconductor device
CA955156A (en) Process for the manufacture of a gallium-arsenide crystal from a solution of ga as in ga, doped with silicon and germanium
JPS539300A (en) Production of gadolinium molybdate single crystal
JPS51145267A (en) Manufacture of semiconductor device
JPS52122479A (en) Etching solution of silicon
JPS5228258A (en) Method for growth of crystals from liquid phase
JPS52109866A (en) Liquid epitaxial growing method
JPS5328374A (en) Wafer production
JPS51120666A (en) Semiconductor device manufacturing method
JPS5436192A (en) Manufacture for semiconductor
JPS5315089A (en) Semiconductor device
JPS51111057A (en) Crystal growing device
AU257519B2 (en) Improvements in or relating to process for producing selectively doped semiconductor dendritic crystals
JPS53104158A (en) Manufacture for semiconductor device
JPS5489568A (en) Semiconductor device

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees