JPS53104158A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53104158A
JPS53104158A JP1880777A JP1880777A JPS53104158A JP S53104158 A JPS53104158 A JP S53104158A JP 1880777 A JP1880777 A JP 1880777A JP 1880777 A JP1880777 A JP 1880777A JP S53104158 A JPS53104158 A JP S53104158A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
substrate
deficiency
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1880777A
Other languages
Japanese (ja)
Inventor
Yukio Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1880777A priority Critical patent/JPS53104158A/en
Publication of JPS53104158A publication Critical patent/JPS53104158A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To establish fine pattern, by implanting ion in the substrate passing through the gas phase grown thin film including the impurity filled with the substrate and increasing the filling efficiency and further reducing the deficiency of crystal.
COPYRIGHT: (C)1978,JPO&Japio
JP1880777A 1977-02-23 1977-02-23 Manufacture for semiconductor device Pending JPS53104158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1880777A JPS53104158A (en) 1977-02-23 1977-02-23 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1880777A JPS53104158A (en) 1977-02-23 1977-02-23 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS53104158A true JPS53104158A (en) 1978-09-11

Family

ID=11981854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1880777A Pending JPS53104158A (en) 1977-02-23 1977-02-23 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53104158A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072630A (en) * 2014-09-26 2016-05-09 コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブＣｏｍｍｉｓｓａｒｉａｔ Ａ Ｌ’Ｅｎｅｒｇｉｅ Ａｔｏｍｉｑｕｅ Ｅｔ Ａｕｘ Ｅｎｅｒｇｉｅｓ Ａｌｔｅｒｎａｔｉｖｅｓ METHOD FOR DOPING GaN-BASE SEMICONDUCTOR

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072630A (en) * 2014-09-26 2016-05-09 コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブＣｏｍｍｉｓｓａｒｉａｔ Ａ Ｌ’Ｅｎｅｒｇｉｅ Ａｔｏｍｉｑｕｅ Ｅｔ Ａｕｘ Ｅｎｅｒｇｉｅｓ Ａｌｔｅｒｎａｔｉｖｅｓ METHOD FOR DOPING GaN-BASE SEMICONDUCTOR

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