FR2113688A5 - Crystal pulling furnace - with two concentric communication crucibles contg melts - Google Patents

Crystal pulling furnace - with two concentric communication crucibles contg melts

Info

Publication number
FR2113688A5
FR2113688A5 FR7140004A FR7140004A FR2113688A5 FR 2113688 A5 FR2113688 A5 FR 2113688A5 FR 7140004 A FR7140004 A FR 7140004A FR 7140004 A FR7140004 A FR 7140004A FR 2113688 A5 FR2113688 A5 FR 2113688A5
Authority
FR
France
Prior art keywords
melts
contg
melt
crucibles
crystal pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7140004A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arthur D Little Inc
Original Assignee
Arthur D Little Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arthur D Little Inc filed Critical Arthur D Little Inc
Application granted granted Critical
Publication of FR2113688A5 publication Critical patent/FR2113688A5/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Single crystals contg. a dopant or made of pseudobinary systems can be pulled with a greater uniformity over the full length than by the Czochralski technique if the main melt volume is surrounded by a concentric auxiliary melt volume. Both melts communicate through a channel at the furnace of the bottom. The concentration C1 of the main melt is made equal to C/k, where C is the desired final concentration in the crystal and k is the distribution coefficient for the melt. The concentration C2 of the auxiliary melt can be calculated as a function of the surface ratio of both melts of k by a given formula.
FR7140004A 1970-11-09 1971-11-08 Crystal pulling furnace - with two concentric communication crucibles contg melts Expired FR2113688A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8780770A 1970-11-09 1970-11-09

Publications (1)

Publication Number Publication Date
FR2113688A5 true FR2113688A5 (en) 1972-06-23

Family

ID=22207376

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7140004A Expired FR2113688A5 (en) 1970-11-09 1971-11-08 Crystal pulling furnace - with two concentric communication crucibles contg melts

Country Status (2)

Country Link
DE (1) DE2152801A1 (en)
FR (1) FR2113688A5 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19514412A1 (en) * 1994-04-21 1995-10-26 Mitsubishi Materials Corp Double crucible for growing a silicon single crystal

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU661966A1 (en) * 1976-11-23 1980-04-05 Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" Device for drawing single crystals from melt
JPS60137899A (en) * 1983-12-23 1985-07-22 Sumitomo Electric Ind Ltd Gallium arsenide single crystal and its production
IN161924B (en) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
JPS6379790A (en) * 1986-09-22 1988-04-09 Toshiba Corp Crystal pulling up device
JP2755588B2 (en) * 1988-02-22 1998-05-20 株式会社東芝 Crystal pulling method
JPH085740B2 (en) * 1988-02-25 1996-01-24 株式会社東芝 Semiconductor crystal pulling method
EP0388503B1 (en) * 1989-02-03 1993-09-01 Mitsubishi Materials Corporation Method for pulling single crystals
JP3484870B2 (en) * 1996-03-27 2004-01-06 信越半導体株式会社 Method for producing silicon single crystal by continuous charge method and dopant supply apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19514412A1 (en) * 1994-04-21 1995-10-26 Mitsubishi Materials Corp Double crucible for growing a silicon single crystal
DE19514412C2 (en) * 1994-04-21 1999-09-02 Mitsubishi Materials Corp Double crucible for growing a silicon single crystal

Also Published As

Publication number Publication date
DE2152801A1 (en) 1972-05-10

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Legal Events

Date Code Title Description
ST Notification of lapse