GB958897A - Method of continuously growing thin strip crystals - Google Patents

Method of continuously growing thin strip crystals

Info

Publication number
GB958897A
GB958897A GB12438/61A GB1243861A GB958897A GB 958897 A GB958897 A GB 958897A GB 12438/61 A GB12438/61 A GB 12438/61A GB 1243861 A GB1243861 A GB 1243861A GB 958897 A GB958897 A GB 958897A
Authority
GB
United Kingdom
Prior art keywords
strip
withdrawn
streams
rollers
piston
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12438/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB958897A publication Critical patent/GB958897A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Continuous Casting (AREA)

Abstract

958,897. Extruding single crystals. RADIO CORPORATION OF AMERICA. April 6, 1961 [May 2, 1960], No. 12438/61. Heading B1S. A body 40 of molten germanium, which is contained in a variable volume cylinder 2 of carbon and is heated by an induction coil 10 is extruded through a die 6 of carbon or quartz as a monocrystalline strip 42, cooling being effected by streams of nitrogen issuing from pipes 24 and 26 at room temperature. The cylinder is operated by a piston 12. The strip is withdrawn between rollers 30 and 32 and may be wound on a reel. A single drive 33 operates both the piston and the rollers. The liquid-solid interface, which is initially formed by contacting the surface of the molten germanium with a seed crystal, is maintained within the die near the exit thereof. The streams of nitrogen may impinge on the centre of each side of the strip so as to form a downwardly extending concave interface. The dimensions of the strip may be 0À006Î0À156 inches. The strip may be withdrawn at a rate of 1 inch per minute. The dimensions may be reduced by increasing the rate of withdrawal.
GB12438/61A 1960-05-02 1961-04-06 Method of continuously growing thin strip crystals Expired GB958897A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2593360A 1960-05-02 1960-05-02

Publications (1)

Publication Number Publication Date
GB958897A true GB958897A (en) 1964-05-27

Family

ID=21828853

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12438/61A Expired GB958897A (en) 1960-05-02 1961-04-06 Method of continuously growing thin strip crystals

Country Status (6)

Country Link
US (1) US3124489A (en)
CH (1) CH399744A (en)
DK (1) DK103801C (en)
ES (1) ES267000A1 (en)
GB (1) GB958897A (en)
NL (1) NL264214A (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3194637A (en) * 1960-06-22 1965-07-13 Westinghouse Electric Corp Apparatus for the continuous dendritic growth of crystalline material
US3249404A (en) * 1963-02-20 1966-05-03 Merck & Co Inc Continuous growth of crystalline materials
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3265469A (en) * 1964-09-21 1966-08-09 Gen Electric Crystal growing apparatus
US3453352A (en) * 1964-12-14 1969-07-01 Texas Instruments Inc Method and apparatus for producing crystalline semiconductor ribbon
US3353914A (en) * 1964-12-30 1967-11-21 Martin Marietta Corp Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies
US3527574A (en) * 1966-09-27 1970-09-08 Tyco Laboratories Inc Growth of sapphire filaments
US3470039A (en) * 1966-12-21 1969-09-30 Texas Instruments Inc Continuous junction growth
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
US3795488A (en) * 1971-02-01 1974-03-05 Gen Electric Method for producing crystal boules with extensive flat, parallel facets
US3796548A (en) * 1971-09-13 1974-03-12 Ibm Boat structure in an apparatus for making semiconductor compound single crystals
BE791024A (en) * 1971-11-08 1973-05-07 Tyco Laboratories Inc PROCESS FOR DEVELOPING CRYSTALS FROM A BATH OF A MATERIAL
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
US3954551A (en) * 1974-07-17 1976-05-04 Texas Instruments Incorporated Method of pulling silicon ribbon through shaping guide
US4264385A (en) * 1974-10-16 1981-04-28 Colin Fisher Growing of crystals
GB1487587A (en) * 1974-12-04 1977-10-05 Metals Res Ltd Crystal growth
DE2508369A1 (en) * 1975-02-26 1976-09-02 Siemens Ag PROCESS FOR MANUFACTURING DISC-SHAPED SILICON BODIES, IN PARTICULAR FOR SOLAR CELLS
US4784715A (en) * 1975-07-09 1988-11-15 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
DE2633961C2 (en) * 1975-07-28 1986-01-02 Mitsubishi Kinzoku K.K. Method of pulling a thin ribbon of single crystal semiconductor
JPS5261180A (en) * 1975-11-14 1977-05-20 Toyo Shirikon Kk Horizontal growth of crystal ribbons
US4116641A (en) * 1976-04-16 1978-09-26 International Business Machines Corporation Apparatus for pulling crystal ribbons from a truncated wedge shaped die
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4216186A (en) * 1978-08-31 1980-08-05 Nasa Means for growing ribbon crystals without subjecting the crystals to thermal shock-induced strains
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
US4443411A (en) * 1980-12-15 1984-04-17 Mobil Solar Energy Corporation Apparatus for controlling the atmosphere surrounding a crystal growth zone
US4517048A (en) * 1983-10-31 1985-05-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for minimizing convection during crystal growth from solution
US5394825A (en) * 1992-02-28 1995-03-07 Crystal Systems, Inc. Method and apparatus for growing shaped crystals
US7780782B2 (en) * 2007-06-08 2010-08-24 Evergreen Solar, Inc. Method and apparatus for growing a ribbon crystal with localized cooling

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (en) * 1953-02-14 1959-07-16 Siemens Ag Process for zone-wise remelting of rods and other elongated workpieces
US2782473A (en) * 1953-03-20 1957-02-26 Joseph B Brennan Continuous casting method and apparatus
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
US2889240A (en) * 1956-03-01 1959-06-02 Rca Corp Method and apparatus for growing semi-conductive single crystals from a melt
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
NL104388C (en) * 1956-11-28

Also Published As

Publication number Publication date
CH399744A (en) 1965-09-30
DK103801C (en) 1966-02-21
ES267000A1 (en) 1961-07-16
NL264214A (en) 1900-01-01
US3124489A (en) 1964-03-10

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