GB1432240A - Method for the vapour-phase growth of single crystals - Google Patents

Method for the vapour-phase growth of single crystals

Info

Publication number
GB1432240A
GB1432240A GB1606173A GB1606173A GB1432240A GB 1432240 A GB1432240 A GB 1432240A GB 1606173 A GB1606173 A GB 1606173A GB 1606173 A GB1606173 A GB 1606173A GB 1432240 A GB1432240 A GB 1432240A
Authority
GB
United Kingdom
Prior art keywords
zone
substrate
assembly
seed
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1606173A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Markov E V Davydov A A
Pogorelova N N
Original Assignee
Markov E V Davydov A A
Pogorelova N N
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Markov E V Davydov A A, Pogorelova N N filed Critical Markov E V Davydov A A
Publication of GB1432240A publication Critical patent/GB1432240A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1432240 Crystal growth by sublimation E V MARKOV A A DAVYDOV and N N POGORELOVA 4 April 1973 16061/73 Heading C1A [Also in Division B1] A method of growing a single crystal of sublimable material comprises, providing a temperature gradient along the interior of an elongate container 1 so as to vaporize a charge of material 2 in a relatively hot zone in the container and create a flow of the vaporized material from the relatively hot zone to a relatively cool zone, and providing in a zone of intermediate temperature an assembly comprising a substrate 5 which carries a monocrystalline seed 4 in a zone of intermediate temperature, the substrateseed assembly being spaced inwardly from the peripheral walls, the substrate-seed assembly being positioned so that the partial pressure gradient of the vaporized material between the charge and the surface of the growing crystal is less than or equal to the partial pressure gradient of the vaporized material between the end of the substrate-seed assembly adjacent and the end remote from said relatively hot zone of the container. The substrate-seed assembly may be moved towards the relatively cool zone at a rate equal to the rate of single crystal growth. The examples illustrate the growth of oriented single crystals of cadmium sulphide, selenide and telluride and of zinc telluride.
GB1606173A 1973-04-24 1973-04-04 Method for the vapour-phase growth of single crystals Expired GB1432240A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7314818A FR2227051B1 (en) 1973-04-24 1973-04-24

Publications (1)

Publication Number Publication Date
GB1432240A true GB1432240A (en) 1976-04-14

Family

ID=9118414

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1606173A Expired GB1432240A (en) 1973-04-24 1973-04-04 Method for the vapour-phase growth of single crystals

Country Status (4)

Country Link
BE (1) BE797660A (en)
FR (1) FR2227051B1 (en)
GB (1) GB1432240A (en)
NL (1) NL7304626A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2194554A (en) * 1986-07-29 1988-03-09 Sharp Kk A method for the growth of a compound semiconductor crystal and an apparatus for the same
WO1994012697A1 (en) * 1992-12-01 1994-06-09 Nauchno-Proizvodstvennoe Predpriyatie 'principia Optics' Process for growing a monocrystal and a device for carrying this out
DE4310745A1 (en) * 1993-04-01 1994-10-06 Siemens Ag Method for preparing SiC single crystals and appliance for implementing the method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2194554A (en) * 1986-07-29 1988-03-09 Sharp Kk A method for the growth of a compound semiconductor crystal and an apparatus for the same
US4869776A (en) * 1986-07-29 1989-09-26 Sharp Kabushiki Kaisha Method for the growth of a compound semiconductor crystal
GB2194554B (en) * 1986-07-29 1991-02-06 Sharp Kk A method for the growth of a compound semiconductor crystal
WO1994012697A1 (en) * 1992-12-01 1994-06-09 Nauchno-Proizvodstvennoe Predpriyatie 'principia Optics' Process for growing a monocrystal and a device for carrying this out
DE4310745A1 (en) * 1993-04-01 1994-10-06 Siemens Ag Method for preparing SiC single crystals and appliance for implementing the method
DE4310745C2 (en) * 1993-04-01 1999-07-08 Siemens Ag Method for producing SiC single crystals and device for carrying out the method

Also Published As

Publication number Publication date
FR2227051B1 (en) 1976-11-12
BE797660A (en) 1973-10-02
NL7304626A (en) 1974-10-07
FR2227051A1 (en) 1974-11-22

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee